Method of cleaning CVD cold-wall chamber and exhaust lines
First Claim
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1. A method for cleaning a process chamber having post deposition deposits formed therein comprising the steps of:
- (a) providing Cl2 gas into said processing chamber;
(b) thermally decomposing said gas to form Cl radicals and reacting said Cl radicals with said deposits formed inside said process chamber on internal components from the group consisting of a susceptor, chamber liners, upper and lower domes, and preheat rings which are fabricated from quartz, SiC coated graphite or, stainless steel; and
(c) removing the by products of said reaction.
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Abstract
A method of cleaning post deposition deposits from a processing chamber by providing a chlorine gas (Cl2), forming chlorine radicals and reacting the chlorine radicals with the deposits.
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Citations
39 Claims
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1. A method for cleaning a process chamber having post deposition deposits formed therein comprising the steps of:
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(a) providing Cl2 gas into said processing chamber; (b) thermally decomposing said gas to form Cl radicals and reacting said Cl radicals with said deposits formed inside said process chamber on internal components from the group consisting of a susceptor, chamber liners, upper and lower domes, and preheat rings which are fabricated from quartz, SiC coated graphite or, stainless steel; and (c) removing the by products of said reaction. - View Dependent Claims (2, 3)
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4. A method of cleaning a process chamber having post deposition deposits formed therein comprising the steps of:
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(a) providing Cl2 gas into said process chamber having post deposition deposits formed on internal process chamber components, (b) thermally decomposing said Cl2 gas into Cl radicals, (c) reacting said formed Cl radicals with said internal process chamber deposits; and (d) removing the by products of said reaction. - View Dependent Claims (5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15)
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16. A method for cleaning a process chamber having deposits formed from hydrogen, silicon and chlorine, generally [SiHx Cly ]n, comprising the steps of:
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(a) providing a deposition process gas comprising of a silicon source gas and H2 carrier gas into said process chamber to form a silicon film within said process chamber wherein said silicon film forms deposits on internal process chamber components; (b) providing an inert gas into said chamber to remove residual H2 ; (c) providing Cl2 gas into said process chamber; (d) thermally decomposing said Cl2 gas into Cl radicals; (e) reacting said formed Cl radicals with said deposits formed on internal process chamber components; and (f) providing an inert gas into said chamber to remove residual Cl gases, thereby removing the by products of said reaction. - View Dependent Claims (17, 18, 19, 20, 21, 22, 23, 24, 25)
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26. A method for cleaning a process chamber comprising of the steps of:
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(a) providing process chamber comprising a susceptor, preheat rings, liner, and quartz dome; (b) forming deposits on process chamber components as a result of silicon deposition; (c) providing Cl2 gas into said process chamber; (d) thermally decomposing said Cl2 gas into chlorine radicals; and (e) reacting said formed chlorine radicals with said deposits. (f) removing the product of said reaction. - View Dependent Claims (27, 28, 29, 30, 31, 32, 33)
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34. A method for cleaning a process chamber having post deposition deposits formed therein comprising the steps of:
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(a) providing a chlorine source gas into said processing chamber having post deposition deposits formed on internal chamber components; (b) providing a chamber temperature about or below 1125°
C.;(c) thermally decomposing said chlorine source gas to form chlorine radicals and reacting said chlorine radicals with said deposits formed on internal chamber components; and (d) removing the by products of said reaction. - View Dependent Claims (35, 36, 37, 38, 39)
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Specification