Method and apparatus for improving etch and deposition uniformity in plasma semiconductor processing

• US 6,042,687 A
• Filed: 06/30/1997
• Issued: 03/28/2000
• Est. Priority Date: 06/30/1997
• Status: Expired due to Term

• Current Assignee: Lam Research Corporation
• Original Assignee: Lam Research Corporation
• Inventors: Yang, Richard, Singh, Vikram, Barnes, Michael, McMillin, Brian, Ni, Tom
• Primary Examiner(s): DANG, THI D
• Application Number:
  US08/885,346
• Time in Patent Office: 1,002 Days
• Field of Search: 156/345, 118/723 I, 118/723 IR, 118/715, 118/723 E, 216/68, 427/569, 204/298.07, 204/298.33
• US Class Current: 156/345.33
• CPC Class Codes: H01J 37/321 the radio frequency energy being inductively coupled to the plasma
• CPC Class Codes: H01J 37/3244 Gas supply means

Abstract

A plasma processing system and method for processing substrates such as by chemical vapor deposition or etching. The system includes a plasma processing chamber, a substrate support for supporting a substrate within the processing chamber, a dielectric member having an interior surface facing the substrate support, the dielectric member forming a wall of the processing chamber, a primary gas supply supplying a primary gas such as process gas into the chamber, a secondary gas supply supplying a secondary gas such as a substantially inert, a substrate passivating or a reactant scavenging gas into the chamber, and an RF energy source such as a planar coil which inductively couples RF energy through the dielectric member and into the chamber to energize the primary gas into a plasma state. The secondary gas is concentrated near the periphery of the substrate, improving etching/deposition uniformity across the substrate surface.

Claims

1. A plasma processing system comprising:

a plasma processing chamber;

a substrate support supporting a substrate within the processing chamber;

a dielectric member having an interior surface facing the substrate support, wherein the dielectric member forms a wall of the processing chamber;

a primary gas supply supplying a primary gas into the chamber;

a secondary gas supply supplying a secondary gas into the chamber in a zone adjacent the periphery of the substrate, the secondary gas supply injecting the secondary gas at an acute angle with respect to a plane parallel to the exposed surface of the substrate; and

a radio frequency energy source which inductively couples radio frequency energy through the dielectric member and into the chamber to energize the primary gas into a high density plasma state to process the substrate.

2. The system of claim 1, wherein the plasma processing chamber is a chemical vapor deposition plasma reactor or a plasma etching reactor.

3. The system of claim 1, wherein the secondary gas supply supplies a substantially inert gas.

4. The system of claim 1, wherein the secondary gas supply comprises elongated injector tubes.

5. The system of claim 4, wherein gas outlets of a plurality of the injector tubes are distributed around the substrate periphery.

6. The system of claim 4, wherein the injector tubes inject the secondary gas at an acute angle with respect to a plane parallel to an exposed surface of the substrate.

7. The system of claim 1, wherein an open space extends between the substrate periphery and a sidewall of the chamber.

8. The system of claim 1, wherein the secondary gas supply injects the secondary gas at subsonic or sonic velocity and the primary gas supply injects the primary gas at a subsonic, sonic or supersonic velocity.

9. The system of claim 1, wherein the radio frequency source comprises a planar or nonplanar antenna.

10. The system of claim 1, wherein the substrate support includes an electrostatic chuck and at least one electrode supplying an RF bias to the substrate.

11. The system of claim 1, wherein the primary gas supply comprises a gas ring, a showerhead, a gas distribution plate, or discrete injector tubes through which process gas is supplied into a space between the substrate and the dielectric member.

12. The system of claim 1, wherein the secondary gas supply supplies a substrate passivating gas comprising nitrogen, oxygen, borontrichloride, fluorocarbons, hydrofluorocarbons or mixture thereof.

13. The system of claim 1, wherein the secondary gas supply supplies a hydrogen-containing gas.

14. The system of claim 1, wherein the secondary gas supply supplies a reactant-scavenging gas comprising hydrogen, ammonia or mixture thereof.

15. The system of claim 1, wherein the secondary gas supply comprises outlets in part of the substrate support.

16. The system of claim 1, wherein the secondary gas supply comprises outlets in a gas ring surrounding a substrate support, the outlets injecting the secondary gas at an acute angle with respect to a plane parallel to the exposed surface of the substrate.

17. A method of depositing or etching a layer on an exposed surface of a substrate comprising:

placing the substrate on a substrate support in a processing chamber, wherein an interior surface of a dielectric member forming a wall of the process chamber faces the substrate support;

supplying a primary gas into the processing chamber from a primary gas supply;

supplying a secondary gas into the processing chamber from a secondary gas supply, the secondary gas being concentrated around the periphery of the substrate, the secondary gas supply injecting the secondary gas at an acute angle with respect to a plane parallel to the exposed surface of the substrate;

energizing the primary gas into a high density plasma state by inductively coupling radio frequency energy produced by a radio frequency energy source through the dielectric member into the processing chamber, the primary gas being plasma phase reacted with the exposed surface of the substrate such that a layer of material is deposited or etched on the exposed surface.

18. The method of claim 17, the primary gas comprising a process gas supplied from a gas ring, a showerhead, a gas distribution plate, or discrete injectors and the radio frequency energy source comprises a planar or nonplanar antenna.

19. The method of claim 17, wherein the secondary gas is injected from injector tubes located around the substrate periphery.

20. The method of claim 19, wherein the injector tubes inject the secondary gas in a direction which intersects the exposed surface of the substrate.

21. The method of claim 19, wherein the injector tubes inject the secondary gas in a direction which does not intersect the exposed surface of the substrate.

22. The method of claim 17, wherein the secondary gas comprises argon, helium, nitrogen or mixture thereof.

23. The method of claim 17, wherein the secondary gas supply comprises outlets in part of the substrate support, the outlets injecting the secondary gas at an acute angle with respect to a plane parallel to the exposed surface of the substrate.

24. The method of claim 17, wherein individual semiconductor wafers are sequentially processed in the processing chamber.

25. The method of claim 17, wherein the secondary gas supply comprises injector tubes extending from a wall of the chamber opposite to the interior surface of the dielectric member, the injector tubes injecting the secondary gas into an open space between the substrate and the interior surface of the dielectric member.

26. The method of claim 17, wherein the secondary gas is injected at sonic or subsonic velocity and the primary gas is injected at subsonic, sonic or supersonic velocity.

27. The method of claim 17, wherein the secondary gas consists essentially of one or more substantially inert gases.

28. The method of claim 17, wherein the secondary gas comprises a surface passivating gas comprising nitrogen, oxygen, borontrichloride, fluorocarbons, hydrofluorocarbons or mixture thereof.

29. The method of claim 17, wherein the secondary gas comprises a reactant-scavenging gas comprising hydrogen, ammonia or mixture thereof.