Method of fabricating a dual damascene structure
First Claim
1. A method of fabricating dual damascene structures, comprising the steps of:
- providing a semiconductor substrate, wherein the semiconductor substrate has a plurality of devices and a dielectric layer on the devices;
forming a photoresist layer on the dielectric layer;
exposing the photoresist layer through a mask;
simultaneously etching the photoresist layer and the dielectric layer using an etchant to simultaneously form at least a trench and a via in the dielectric layer, wherein the via couples with one of the devices;
removing the photoresist layer remaining on the dielectric layer;
forming a conductive layer into the trench, the via and on the dielectric layer; and
partially removing the conductive layer to expose the surface of the dielectric layer.
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Accused Products
Abstract
A method of fabricating a dual damascene structure is provided comprising forming a photoresist layer on a dielectric layer. A mask including a region that light completely passes over, a region that light partially passes over and a dense region is used for exposure. A development step is carried out to remove the photoresist layer under the region that light completely passes over, to partially remove the photoresist layer under the region that light partially passes over and to leave the photoresist layer under the dense region. The photoresist layer remaining from the forgoing step and the dielectric layer are partially removed to form a via and a trench in the dielectric layer. The via and the trench are filled with metal to form a dual damascene structure.
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Citations
19 Claims
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1. A method of fabricating dual damascene structures, comprising the steps of:
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providing a semiconductor substrate, wherein the semiconductor substrate has a plurality of devices and a dielectric layer on the devices; forming a photoresist layer on the dielectric layer; exposing the photoresist layer through a mask; simultaneously etching the photoresist layer and the dielectric layer using an etchant to simultaneously form at least a trench and a via in the dielectric layer, wherein the via couples with one of the devices; removing the photoresist layer remaining on the dielectric layer; forming a conductive layer into the trench, the via and on the dielectric layer; and partially removing the conductive layer to expose the surface of the dielectric layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A method of fabricating dual damascene structures, comprising the steps of:
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providing a semiconductor substrate; forming a plurality of devices on the semiconductor substrate; forming a dielectric layer on the devices and the semiconductor substrate; forming a photoresist layer on the dielectric layer; exposing the photoresist layer through a mask, wherein the mask comprises a transmissive region, a partially transmissive region and an opaque region; forming a first region of the photoresist layer under the transmissive region, forming a second region of the photoresist layer under the partially transmissive region and forming a third region of the photoresist layer under the opaque region; simultaneously etching the photoresist layer and the dielectric layer to simultaneously form at least a via coupling with one of the devices and a trench in the dielectric layer by etching the dielectric layer through the photoresist layer; removing the photoresist layer remaining on the dielectric layer; forming a conductive layer over the substrate to fill the via and the trench; and partially removing the conductive layer to expose the surface of the dielectric layer. - View Dependent Claims (12, 13, 14, 15, 16, 17, 18, 19)
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Specification