×

Three-dimensional non-volatile memory

  • US 6,043,122 A
  • Filed: 06/16/1999
  • Issued: 03/28/2000
  • Est. Priority Date: 08/01/1995
  • Status: Expired due to Term
First Claim
Patent Images

1. A method of forming a non-volatile memory structure having a floating gate, the method comprising:

  • forming a depression into a semiconductor material by oxidizing a selected portion of a surface of a semiconductor material and then removing oxide from said depression, said depression having a sidewall; and

    forming said floating gate of said non-volatile memory structure over said sidewall, said floating gate being insulated from said sidewall.

View all claims
  • 7 Assignments
Timeline View
Assignment View
    ×
    ×