Process for forming a semiconductor device
DCFirst Claim
1. A process for forming a semiconductor device comprising:
- forming an insulating film over a substrate and a conductive region;
forming a first buffer film over the insulating film;
patterning the first buffer film and the insulating film to form an opening, wherein a portion of the opening exposes a portion of the conductive region;
forming a first conductive layer over the first buffer film and within the opening, wherein the first conductive layer contacts the conductive region; and
removing a portion of the first conductive layer overlying the insulating film and most of the first buffer film that overlies the insulating film.
19 Assignments
Litigations
0 Petitions
Accused Products
Abstract
A buffer film (154, 164) is formed over an underlying film (153, 162) to protect that underlying film (153, 162) from damage during a removal sequence, such as polishing. Scratches, gouging, smearing that can occur to the underlying layer (153, 162) are less likely to occur because of the presence of the buffer film (154, 164). In some embodiments, an insulating film (162) is to be protected. The buffer film (164) is formed over the insulating film (162), and the insulating and buffer films (162 and 164) are patterned. During a subsequent conductive layer polishing operation in an embodiment, most of the buffer film (164) is removed. In still another embodiment, a buffer film (154) is formed over a conductive layer (153) to protect it during "gap fill" process sequence. Although residual portions of the buffer film (154, 164) are usually removed, in some instances, those residual portions can remain if there are no significant adverse affects.
-
Citations
18 Claims
-
1. A process for forming a semiconductor device comprising:
-
forming an insulating film over a substrate and a conductive region; forming a first buffer film over the insulating film; patterning the first buffer film and the insulating film to form an opening, wherein a portion of the opening exposes a portion of the conductive region; forming a first conductive layer over the first buffer film and within the opening, wherein the first conductive layer contacts the conductive region; and removing a portion of the first conductive layer overlying the insulating film and most of the first buffer film that overlies the insulating film. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
-
-
14. A process for forming a semiconductor device comprising:
-
forming a first film over a substrate; forming a second film over the first film; patterning the first and second films to form an opening, wherein the opening extends through all the second film and at least partially through the first film; forming a third film over the second film and within the opening; removing a portion of the third film that overlies the second film and most of the second film that overlies the first film. - View Dependent Claims (15, 16, 17, 18)
-
Specification