Method and integrated circuit structure for preventing latch-up in CMOS integrated circuit devices

• US 6,043,542 A
• Filed: 01/29/1997
• Issued: 03/28/2000
• Est. Priority Date: 01/29/1997
• Status: Expired due to Term

• Current Assignee: Micron Technology, Inc.
• Original Assignee: Micron Technology, Inc.
• Inventors: Keeth, Brent, Kerr, Robert B.
• Primary Examiner(s): Chaudhuri, Olik
• Assistant Examiner(s): Wille, Douglas A.
• Application Number:
  US08/790,906
• Time in Patent Office: 1,154 Days
• Field of Search: 257/372, 257/386
• US Class Current: 257/372
• CPC Class Codes: H01L 27/0255 using diodes as protective elements
• CPC Class Codes: H01L 27/0921 Means for preventing a bipolar, e.g. thyristor, action between the different transistor regions, e.g. Latchup prevention

Abstract

An integrated circuit structure for preventing latch-up of an integrated circuit device, such as a dynamic random access memory, that is operated with a negative substrate bias in use of the device. The integrated circuit structure includes a p-type substrate having an n-well region formed therein, with a rectifying junction formed in a lightly doped portion of the n-well region and connected to provide a path to ground for clamping the substrate to ground during power-up conditions. In another embodiment, a rectifying junction formed in a lightly doped portion of the n-well region functions as a diode clamp for a pumped bias voltage for the n-well region. In forming the rectifying junction in the n-well region, the n-plus ion implantation mask that is used in forming n-plus doped regions in the n-well region is used to mask portions of the n-well region during the n-plus ion implantation process and a metal barrier layer is formed on the exposed lightly doped portions of the n-well region, so that a Schottky diode is formed. Also described is a method for fabricating an integrated circuit structure which includes forming a rectifying junction in the well portion for providing a diode clamp between voltage sources of the integrated circuit structure.

Claims

1. An integrated circuit structure, comprising:

a semiconductor substrate of a material of a first conductivity type wherein said substrate includes at least a first doped portion heavily doped by a material of said first conductivity type;

a well region in said substrate, said well region including a first doped portion heavily doped by a material of a second conductivity type, and a second doped portion lightly doped by a material of said second conductivity type;

a first metal conductor electrically connected to said first doped portion of said well region for connecting said first doped portion to a first pumped voltage source;

a second metal conductor electrically coupled to said second doped portion of said well region for connecting said well region to a second voltage source, the first pumped voltage source being greater in potential than the second voltage source;

a third metal conductor electrically coupled to first doped portion of said substrate and connected to a third voltage source; and

a Schottky rectifying junction fabricated in said lightly doped portion of said well region, said second voltage source being coupled to said first pumped voltage source through a path including said rectifying Schottky junction.

2. The integrated circuit structure according to claim 1, wherein said first voltage source is a pumped bias voltage for said well region, said second voltage source is a supply voltage for the integrated circuit structure and said third voltage source is a substrate bias voltage source.

3. The integrated circuit structure according to claim 1, wherein said rectifying junction is formed by a barrier diffusion layer of metal that is deposited on the lightly doped portion of said well region.

4. An integrated circuit structure, comprising:

a semiconductor substrate of a p-type material, said substrate including a p-doped portion formed by a material having a heavy p-plus concentration;

a well region of an n-type material in said substrate, said well region defining a lightly n-doped portion and including at least one heavily n-doped portion formed by a material having a heavy n-plus concentration;

a first metal conductor electrically connected to said p-doped portion for coupling said substrate to a source of a negative substrate bias voltage;

a second metal conductor electrically connected to said heavily n-doped portion for coupling said n-well region to a source of a pumped potential;

a Schottky rectifying junction in said n-well region; and

a third metal conductor electrically connected to said rectifying junction and to the pumped potential through a path including said Schottky rectifying junction.

5. The integrated circuit structure according to claim 4, wherein said Schottky rectifying junction comprises a barrier diffusion layer of metal that is formed on said lightly doped portion of said n-well region for providing a barrier layer between said third conductor and said lightly doped portion of said n-well region.

6. The integrated circuit structure according to claim 5, wherein said barrier layer comprises titanium nitride.

7. The integrated circuit structure according to claim 5, wherein at least said third conductor is comprised of a metal from the group consisting of aluminum and titanium, and silicides thereof.

8. An integrated circuit structure, comprising:

a semiconductor substrate of a p-type material wherein said substrate includes at least a first p-doped portion heavily doped by a material having a heavy p-plus concentration;

an n-type well region in said substrate, said well region including a first n-doped portion heavily doped by a material having a heavy n-plus concentration, and a second lightly n-doped portion;

a first metal conductor electrically connected to said first n-doped portion of said well region for connecting said first n-doped portion to a first pumped voltage source;

a second metal conductor electrically coupled to said second lightly n-doped portion of said well region for connecting said well region to a second voltage source, the first pumped voltage source being greater in potential than the second voltage source;

a third metal conductor electrically coupled to the first p-doped portion of said substrate and connected to a third voltage source; and

a Schottky rectifying junction fabricated in said lightly n-doped portion of said well region, said second voltage source being coupled to said first pumped voltage source through a path including said rectifying Schottky junction.

9. An integrated circuit, comprising:

a semiconductor substrate of a material of a first conductivity type having a heavily doped portion of the first conductivity type;

a well region of a second conductivity type formed in the semiconductor substrate, including a heavily doped portion of the second conductivity type;

a first conductor for coupling the heavily doped portion of the semiconductor substrate to a source of a bias voltage;

a second conductor for coupling the heavily doped portion of the well region to a reference potential;

a rectifying junction in the well region, the substrate coupled to the reference potential through a path including the rectifying junction.

10. A dynamic random access memory (DRAM), comprising:

an array of memory cells formed on a substrate; and

a rectifying junction for clamping the substrate to a reference potential to prevent forward biasing of parasitic junctions in the DRAM.

11. An integrated circuit structure, comprising:

a semiconductor substrate of a p-type material wherein said substrate includes at least a first p-doped portion heavily doped by a material having a heavy p-plus concentration;

an n-type well region in said substrate, said well region including a first n-doped portion heavily doped by a material having a heavy n-plus concentration, and a second lightly n-doped portion;

a first metal conductor connected to said first doped portion of said well region by a metal plug, the first conductor for connecting said first doped portion to a first pumped voltage source;

a second metal conductor coupled to said second doped portion of said well region by a second metal plug, the second conductor for connecting said well region to a second voltage source, the first pumped voltage source being greater in potential than the second voltage source;

a third metal conductor electrically coupled to the first p-doped portion of said substrate by a third metal plug and connected to a back bias voltage source; and

a Schottky rectifying junction fabricated in said lightly n-doped portion of said well region, said second voltage source being coupled to said first pumped voltage source through a path including said rectifying Schottky junction.