Plasma processing apparatus

• US 6,043,608 A
• Filed: 10/31/1997
• Issued: 03/28/2000
• Est. Priority Date: 10/31/1996
• Status: Expired due to Term

• Current Assignee: Anelva Corporation (Canon Inc.), NEC Corporation, Nihon Koshuha Co., Ltd.
• Original Assignee: Anelva Corporation (Canon Inc.), NEC Corporation, Nihon Koshuha Co., Ltd.
• Inventors: Niimura, Yasuo, Samukawa, Seiji, Nakagawa, Yukito, Sato, Hisaaki, Shinohara, Kibatsu, Tsukada, Tsutomu
• Primary Examiner(s): Wong, Don
• Assistant Examiner(s): VANNUCCI, JAMES
• Application Number:
  US08/962,390
• Time in Patent Office: 879 Days
• Field of Search: 343/700 MS, 315/111.51, 315/111.21, 315/111.31, 315/111.41, 315/111.61, 315/111.71
• US Class Current: 315/111.51
• CPC Class Codes: H01J 37/32082 Radio frequency generated discharge H01J37/32357, H01J37/32366, H01J37/32394 and H01J37/32403 take precedence

Abstract

This invention discloses a plasma processing apparatus for carrying out a process onto a substrate utilizing a plasma generated by supplying RF energy with a plasma generation gas. This apparatus comprises a vacuum chamber having a pumping system, a substrate holder for placing the substrate to be processed in the vacuum chamber, a gas introduction means for introducing the plasma generation gas into a plasma generation space, an energy supply means for supplying the RF energy with the plasma generation gas. The antenna has multiple antenna elements provided symmetrically to the center on the axis of the substrate and an end shorting member shorting each end of the antenna elements so that an RF current path symmetrical to the center is applied. Multiple circuits resonant at a frequency of the RF energy are formed symmetrically of the antenna elements and the end shorting member. Length obtained by adding total length of neighboring two of the antenna elements and length of the RF current path between ends of neighboring two of the antenna elements corresponds to one second of wavelength of the RF energy.

Claims

1. Plasma processing apparatus for carrying out a process onto a substrate utilizing a plasma generated by supplying RF energy with a plasma generation gas from an antenna, wherein said antenna has multiple antenna elements provided symmetrically to the center on the axis of said substrate and an end shorting member shorting said antenna elements at those ends further from RF supply points on said antenna elements so that an RF current path symmetrical to said center is applied interconnecting said ends of neighboring two of said antenna elements.

2. Plasma processing apparatus as claimed in claim 1, wherein multiple circuits resonant at a frequency of said RF energy are formed symmetrically of said antenna elements and said end shorting member.

3. Plasma processing apparatus as claimed in claim 2, wherein length obtained by adding total length of neighboring two of said antenna elements and length of said RF current path between said ends of said neighboring two of said antenna elements corresponds to one half of wavelength of said RF energy.

4. Plasma processing apparatus as claimed in claim 1, comprising a vacuum chamber having a pumping system, a substrate holder for placing a substrate to be processed in said vacuum chamber, a gas introduction means for introducing a plasma generation gas into a plasma generation space, a energy supply means for supplying RF energy with said plasma generation gas, wherein said energy supply means comprises said antenna.

5. Plasma processing apparatus as claimed in claim 1, wherein said antenna elements are provided at a plane parallel to said substrate, and a partition wall which isolates the space where said antenna elements are provided from the space where said plasma is generated is provided.

6. Plasma processing apparatus as claimed in claim 1, wherein said antenna elements are provided at a plane parallel to said substrate, and isolation blocks with which openings formed of said antenna elements and said end shorting member are filled up are provided.

7. Plasma processing apparatus as claimed in claim 1, wherein said antenna elements are bars with the same length provided along radiate lines symmetric to said center and displaced from said center with the same distance.

8. Plasma processing apparatus as claimed in claim 1, wherein frequency of said RF energy is in the range of 100 MHz to 1000 MHz.

9. Plasma processing apparatus as claimed in claim 4, wherein said energy supply means has a RF line to supply said RF energy with said antenna, and said RF line is connected with only one of said antenna elements.