Power amplifier incorporating heterojunction and silicon bipolar transistors

• US 6,043,714 A
• Filed: 03/23/1998
• Issued: 03/28/2000
• Est. Priority Date: 11/27/1997
• Status: Expired due to Term

• Current Assignee: Murata Manufacturing Co Limited
• Original Assignee: Mitsubishi Denki Kabushiki Kaisha (Mitsubishi Electric Corporation)
• Inventors: Yamamoto, Kazuya, Miyazaki, Yukio
• Primary Examiner(s): Shingleton, Michael B
• Application Number:
  US09/045,793
• Time in Patent Office: 736 Days
• Field of Search: 330/296, 330/299, 330/300
• US Class Current: 330/296
• CPC Class Codes: H03F 1/30 Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters in differential amplifiers H03F3/45479
• CPC Class Codes: H03F 2200/513 the amplifier being made for low supply voltages
• CPC Class Codes: H03F 3/19 with semiconductor devices only

Abstract

A power amplifier including an amplifier stage including a heterojunction bipolar transistor for signal amplification having a base electrode connected to an RF signal input terminal, and a grounded emitter electrode; and a bias circuit including a silicon bipolar transistor having a base electrode connected to a power supply terminal, and a terminal from which a current amplified in response to a base current is output, which terminal is connected to the base electrode of the heterojunction bipolar transistor stage. In this power amplifier, since the voltage required for operating the bias circuit is reduced, a power amplifier capable of operating at a low voltage is realized.

Claims

1. A power amplifier comprising:

an amplifier stage including a first heterojunction bipolar transistor for signal amplification, having a first conductivity type, a base electrode connected to an RF signal input terminal, and a grounded emitter; and

a bias circuit including;

a first silicon bipolar transistor having a second conductivity type, and an emitter electrode connected to the power supply terminal; and

a second heterojunction bipolar transistor having the first conductivity type, a grounded emitter electrode, a base electrode connected to said base electrode of said first heterojunction bipolar transistor, and a collector electrode connected to said base electrode of said second heterojunction bipolar transistor and to a collector electrode of said first silicon bipolar transistor, and

a second silicon bipolar transistor having the second conductivity type, an emitter electrode connected to the power supply terminal, a collector electrode connected to a constant current source, and a base electrode connected to said base electrode of said first silicon bipolar transistor and to said collector electrode of said second silicon bipolar transistor.

2. The power amplifier of claim 1 wherein said constant current source has a current characteristic so that output current is proportional to temperature.

3. The power amplifier of claim 1 wherein said constant current source has a temperature characteristic so that output current does not change in response to changes in temperature.

4. The power amplifier of claim 1 wherein said bias circuit further comprises a third silicon bipolar transistor of the first conductivity type having an emitter electrode connected to said base electrode of said second heterojunction bipolar transistor, a base electrode connected to said collector electrode of said second heterojunction bipolar transistor, and a collector electrode connected to said power supply terminal.

5. The power amplifier of claim 1 wherein the first and second heterojunction transistors are compound semiconductor heterojunction bipolar transistors.