Buried oxide with a thermal expansion matching layer for SOI
First Claim
Patent Images
1. A silicon-on-insulator structure, comprising:
- a substrate;
a device layer comprising silicon; and
a buried insulating layer between the substrate and device layer, said buried insulating layer comprising a first dielectric layer adjacent said substrate, a layer of silicon adjacent said first dielectric layer, and a second dielectric layer adjacent said device layer, wherein said layer of silicon comprises an implanted region.
1 Assignment
0 Petitions
Accused Products
Abstract
A silicon-on-insulator structure (10) having a thick buried multi-layer (14) is disclosed herein. The thick buried multi-layer (14) comprises a thermal expansion coefficient matching layer (14b) between two insulator layers (14a,14c). The thermal expansion co-efficient matching layer (14b) comprises a material that more closely matches the thermal expansion co-efficient of the silicon substrate (12). Examples include polysilicon and nitridized oxide.
-
Citations
15 Claims
-
1. A silicon-on-insulator structure, comprising:
-
a substrate; a device layer comprising silicon; and a buried insulating layer between the substrate and device layer, said buried insulating layer comprising a first dielectric layer adjacent said substrate, a layer of silicon adjacent said first dielectric layer, and a second dielectric layer adjacent said device layer, wherein said layer of silicon comprises an implanted region. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
-
-
11. A silicon-on-insulator structure, comprising:
-
a substrate; a device layer; an electrically insulating layer between said substrate and said device layer, said electrically insulating layer comprising; a first layer of oxide adjacent said substrate; a layer of silicon adjacent said first oxide layer; a second layer of oxide located on an opposite side of said silicon layer from said first layer of oxide between said layer of silicon and said device layer. - View Dependent Claims (12, 13, 14)
-
-
15. A silicon-on-insulator structure, comprising:
-
a substrate; a device layer comprising silicon; a buried insulating layer between the substrate and device layer, said buried insulating layer comprising a first dielectric layer adjacent said substrate, a layer of silicon adjacent said first dielectric layer, and a second dielectric layer adjacent said device layer; and a contact extending from said device layer through said insulating layer to said substrate, said contact having silicide in said contact adjacent said substrate and sidewalls of said silicon layer.
-
Specification