Substrate structures for electronic devices

• US 6,045,626 A
• Filed: 06/23/1998
• Issued: 04/04/2000
• Est. Priority Date: 07/11/1997
• Status: Expired due to Term

• Current Assignee: TDK Corporation
• Original Assignee: TDK Corporation
• Inventors: Yano, Yoshihiko, Noguchi, Takao
• Primary Examiner(s): Chaudhari, Chandra
• Assistant Examiner(s): CHRISTIANSON, KEITH ALAN
• Application Number:
  US09/102,568
• Time in Patent Office: 651 Days
• Field of Search: 148/33, 148/33.3, 148/33.4, 117/84, 117/88, 117/89, 117/950, 117/952, 438/406, 438/479, 438/493
• US Class Current: 148/33.4
• CPC Class Codes: H01L 33/007 comprising nitride compounds
• CPC Class Codes: H10N 30/076 by vapour phase deposition
• CPC Class Codes: H10N 30/079 using intermediate layers, e.g. for growth control
• CPC Class Codes: H10N 30/10516 Intermediate layers, e.g. barrier, adhesion or growth control buffer layers
• CPC Class Codes: H10N 30/708 Intermediate layers, e.g. barrier, adhesion or growth control buffer layers
• CPC Class Codes: H10N 60/0632 Intermediate layers, e.g. for growth control

Abstract

A substrate structure includes a single crystal Si substrate and a surface layer, with a buffer layer interleaved therebetween. The buffer layer includes at least one of an R--Zr family oxide thin film composed mainly of a rare earth oxide and/or zirconium oxide, an AMnO₃ thin film composed mainly of rare earth element A, Mn and O and having a hexagonal YMnO₃ type structure, an AlO_x thin film composed mainly of Al and O, and a NaCl type nitride thin film composed mainly of titanium nitride, niobium nitride, tantalum nitride or zirconium nitride. The surface layer is an epitaxial film containing a wurtzite type oxide and/or nitride. The surface layer can serve as a functional film such as a semiconductor film or an underlying film therefor, and the substrate structure is useful for the manufacture of electronic devices.

Claims

1. A substrate structure for electronic devices, comprising a substrate having a surface, at least the substrate surface formed of single crystal silicon, a buffer layer on the substrate surface, and a surface layer on the buffer layer,

said buffer layer being constructed by an oxide buffer layer and/or a nitride buffer layer,

said oxide buffer layer including an R--Zr family oxide thin film which is an epitaxial film comprising an oxide of scandium, yttrium or a rare earth element and/or zirconium oxide, an AMnO₃ base thin film which is an epitaxial film comprising A, manganese and oxygen wherein A is scandium, yttrium or a rare earth element and having a crystal structure of hexagonal YMnO₃ type, an AlO_x base thin film which is an epitaxial film comprising aluminum and oxygen, or a combination of said R--Zr family oxide thin film with said AMnO₃ base thin film and/or said AlO_x base thin film,

said nitride buffer layer including a NaCl type nitride thin film which is an epitaxial film comprising at least one of titanium nitride, niobium nitride, tantalum nitride and zirconium nitride,

said surface layer including an oxide epitaxial film having a wurtzite type crystal structure and/or a nitride epitaxial film having a wurtzite type crystal structure.

2. The substrate structure of claim 1 wherein said surface layer includes an AlGaInN base thin film comprising nitrogen and at least one of aluminum, gallium, and indium, a ZnO base thin film comprising zinc oxide, or a combination of said AlGaInN base thin film with said ZnO base thin film.

3. The substrate structure of claim 2 wherein said AlGaInN base thin film is a semiconductor.

4. The substrate structure of claim 1 wherein said substrate has a silicon (100) face at its surface, and a silicon (110) face of said substrate is parallel to a (1-100) face of said surface layer.

5. The substrate structure of claim 1 further comprising a metal thin film on said surface layer, within said surface layer, between said buffer layer and said surface layer, or within said buffer layer, said metal thin film being an epitaxial film comprising at least one of platinum, iridium, osmium, rhenium, palladium, rhodium and ruthenium.

6. The substrate structure of claim 5 wherein said metal thin film has a (111) or (0001) face oriented parallel to the substrate surface.