Method for selective growth of Cu.sub.3 Ge or Cu.sub.5 Si for passivation of damascene copper structures and device manufactured thereby
First Claim
1. A method of forming a device on a surface of a conductive substrate comprising:
- forming a dielectric layer over said surface, said dielectric layer having a top level;
forming a trench with sidewalls through said dielectric layer to expose a portion of said surface;
forming a barrier layer narrowing said trench and covering said surface and covering said top level and said sidewalls of said dielectric layer;
depositing copper as a blanket overfilling said narrow hole and covering said top level;
subtracting material from the surface of said copper leaving a thin layer of said copper covering said barrier layer and said dielectric layer,forming a copper passivation combination with an element selected from silicon and germanium thereby lowering remaining portions of said copper below said dielectric top level in said narrow hole; and
planarizing said copper passivation combination to said top level leaving a thin layer of said compound covering said copper conductor in said narrow hole.
1 Assignment
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Accused Products
Abstract
Form a dielectric layer on a surface of a conductive substrate with a trench through the top surface down to the substrate. Form a barrier layer over the dielectric layer including the exposed surface of the conductive substrate and the exposed sidewalls of the dielectric layer. Form a copper conductor over the barrier layer and overfilling the narrow hole in the trench. Etch away material from the surface of the copper conductor by a CMP process lowering the copper leaving a thin layer of copper over the barrier layer above the dielectric layer aside from the hole. Form a copper passivation by combining an element selected from silicon and germanium with copper on the exposed surfaces of the copper surfaces forming an interface in the narrower hole between the copper and the copper compound located below the dielectric top level. Etch away material from the surface of the copper compound and the barrier layer to planiarize the copper compound by etching down to the dielectric top level leaving a thin layer of the copper passivation compound covering the copper conductor in the narrower hole.
176 Citations
28 Claims
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1. A method of forming a device on a surface of a conductive substrate comprising:
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forming a dielectric layer over said surface, said dielectric layer having a top level; forming a trench with sidewalls through said dielectric layer to expose a portion of said surface; forming a barrier layer narrowing said trench and covering said surface and covering said top level and said sidewalls of said dielectric layer; depositing copper as a blanket overfilling said narrow hole and covering said top level; subtracting material from the surface of said copper leaving a thin layer of said copper covering said barrier layer and said dielectric layer, forming a copper passivation combination with an element selected from silicon and germanium thereby lowering remaining portions of said copper below said dielectric top level in said narrow hole; and planarizing said copper passivation combination to said top level leaving a thin layer of said compound covering said copper conductor in said narrow hole. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
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14. A method of forming a copper conductor in a thin film electronic device over a conductive substrate with a top surface comprising:
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forming a dielectric layer superjacent to said top surface of said conductive substrate, said dielectric layer having a top surface located at a dielectric top level, patterning said dielectric layer to etch a hole therethrough with a dry plasma to etch a trench down to said conductive substrate exposing a portion of said top surface of said conductive substrate and forming exposed sidewalls of said dielectric layer, forming a barrier layer composed of a material selected from the group consisting of tantalum and tantalum nitride, said barrier layer being superjacent to, as follows; a) said top surface of said conductive substrate, b) said dielectric layer including said exposed top surface of said conductive substrate and said exposed sidewalls of said dielectric layer, said barrier layer forming a narrower hole in said trench, forming a copper conductor having a surface, said copper conductor being superjacent to said barrier layer, said copper conductor overfilling said narrower hole, removing material from said surface of said copper conductor by a CMP etching process leaving a lowered copper surface with a thin layer of copper over said barrier layer above said top surface of said dielectric layer, adding silicon or germanium to said copper forming an interface between said copper and said copper/silicon compound or copper/germanium compound located below said dielectric top level in said narrower hole in said trench, and then subtracting material from the surface of said copper compound by a CMP etching process to planarize said copper compound down to said dielectric top level leaving a thin layer of said compound covering said copper conductor in said narrower hole. - View Dependent Claims (15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28)
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Specification