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Semiconductor radiation detector with enhanced charge collection

  • US 6,046,454 A
  • Filed: 10/03/1997
  • Issued: 04/04/2000
  • Est. Priority Date: 10/13/1995
  • Status: Expired due to Term
First Claim
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1. A radiation detector, comprising:

  • (a) a semiconductor having a plurality of sides and of sufficient thickness to interact with ionizing radiation;

    (b) at least one bias electrode formed on at least one side of the semiconductor;

    (c) at least one signal electrode formed on at least one side of the semiconductor;

    (d) at least one focus control electrode, formed on at least one side of the semiconductor and having a first potential, for directing charge clouds resulting from ionizing events in the semiconductor towards an associated signal electrode; and

    (e) at least one shield control electrode, formed on at least one side of the semiconductor near each signal electrode and having a second potential, for reducing the effect on an associated signal electrode of charge induced by trapped charges in the semiconductor.

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