High tensile nitride layer
First Claim
1. An insulating layer in a semiconductor device comprising:
- a doped oxide layer on a doped region of said semiconductor devices;
a nitride film having a residual stress of between -8×
1010 dynes/cm2 and 3×
1010 dynes/cm2 formed on said doped oxide layer; and
an interlayer dielectric layer on said nitride film.
0 Assignments
0 Petitions
Accused Products
Abstract
An insulating layer in a semiconductor device and a process for forming the insulating layer is described. The insulating layer comprises of a nitride layer over the substrate having a residual stress of between -8×109 dynes/cm-2 and -3×1010 dynes/cm-2. The insulating layer can further comprise a doped oxide layer under the nitride layer and can further comprise an interlevel dielectric layer over the nitride layer. Moreover, the nitride layer can be formed by bringing the temperature in a chemical vapor deposition reactor to below 550 degrees Celsius, placing the substrate into the reactor at the temperature, and forming the nitride layer on the substrate. Alternatively, the nitride layer can be formed by pushing the substrate into a chemical vapor deposition reactor at a speed greater than 300 millimeters per minute, and forming the nitride layer on the substrate.
67 Citations
12 Claims
-
1. An insulating layer in a semiconductor device comprising:
-
a doped oxide layer on a doped region of said semiconductor devices; a nitride film having a residual stress of between -8×
1010 dynes/cm2 and 3×
1010 dynes/cm2 formed on said doped oxide layer; andan interlayer dielectric layer on said nitride film.
-
-
2. A semiconductor device comprising:
-
a silicide layer; a refractory metal oxysilicide layer having a thickness of less than 100 angstroms over said silicide layer; and a nitride layer on said refractory metal oxysilicide layer; and an interlayer dielectric on said nitride layer.
-
-
3. A field effect transistor comprising:
-
a source region; a drain region coupled to said source region; a silicide layer; a refractory metal oxysilicide layer having a thickness of less than 100 angstroms; a nitride layer over said refractory metal oxysilicide layer having a residual stress of between -8×
109 dynes /cm2 and -3×
1010 dynes/cm2 ; andan interlevel dielectric layer over said nitride layer.
-
-
4. An integrated circuit comprising:
-
a device having a silicide layer; a doped oxide layer on said silicide layer; a nitride layer having a tensile stress on said doped oxide layer; and an interlayer dielectric on said nitride layer.
-
-
5. An integrated circuit comprising:
-
a transistor on a semiconductor substrate, said transistor having at least one silicide region; a doped oxide layer on said transistor including said silicide region; a nitride layer having a tensile stress on said doped oxide layer; and an interlayer dielectric on said nitride layer. - View Dependent Claims (6, 7, 8)
-
-
9. An integrated circuit comprising:
-
a transistor having a source, a gate and a drain; a refractory silicide on said source and said drain; a doped oxide layer on said transistor and on said refractory metal silicide and on said source and said drain; a nitride layer having a residual tensile stress on said doped oxide layer; and an interlayer dielectric on said nitride layer. - View Dependent Claims (10, 11, 12)
-
Specification