Semiconductor device and memory system

• US 6,046,935 A
• Filed: 01/27/1999
• Issued: 04/04/2000
• Est. Priority Date: 03/18/1996
• Status: Expired due to Term

• Current Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Original Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Inventors: Takeuchi, Ken, Tanaka, Tomoharu
• Primary Examiner(s): Dinh, Son T.
• Application Number:
  US09/238,186
• Time in Patent Office: 433 Days
• Field of Search: 365/185.03, 365/185.18, 365/221, 365/189.05, 365/189.01
• US Class Current: 365/185.03
• CPC Class Codes: G11C 11/5621 using charge storage in a floating gate
• CPC Class Codes: G11C 11/5628 Programming or writing circuits; Data input circuits
• CPC Class Codes: G11C 11/5635 Erasing circuits
• CPC Class Codes: G11C 11/5642 Sensing or reading circuits; Data output circuits
• CPC Class Codes: G11C 16/0483 comprising cells having several storage transistors connected in series
• CPC Class Codes: G11C 2211/5641 Multilevel memory having cells with different number of storage levels
• CPC Class Codes: G11C 2211/5642 Multilevel memory with buffers, latches, registers at input or output

Abstract

A semiconductor memory device comprises a memory cell array having electrically erasable and programmable memory cells arranged in rows and columns, each memory cell capable of storing n-value data (n is 3 or a greater natural number), and a data circuit having m latch circuits for holding data items read from said memory cells, wherein data items read from said memory cells and held in k latch circuits (k<m) are output from the memory device before data items read from said memory cells are held in the remaining (m-k) latch circuits, during data-reading operation.

Claims

1. A semiconductor memory device comprising:

memory cells capable of storing multi-bit data items; and

a data circuit for holding a data item to be written into a memory cell,

wherein each of said multi-bit data items contains an upper bit and a lower bit, the upper bit being written into the memory cell after a first write data item is inputted from an external device and temporarily held in said data circuit, and the lower bit being written into the memory cell after a second write data item is inputted from the external device and temporarily held in said data circuit.

2. A semiconductor memory device according to claim 1, wherein the lower bit is written into the memory cell after the second write data item inputted from the external device and the upper bit read from the memory cell are held in said data circuit.

3. A semiconductor memory device comprising:

a plurality of memory cells capable of storing multi-bit data items, said memory cells divided into a plurality of groups, each containing a predetermined number of memory cells and constituting a page;

a data circuit for holding a data item to be written into a memory cell,

wherein each of said multi-bit data items contains an upper bit to be written first into each memory cell and a lower bit to be written next into each memory cell, the upper bit being first written into a memory cell of one group constituting an upper page, and the lower bit being then written into a memory cell of another group constituting a lower page.

4. A semiconductor memory device according to claim 3, wherein said upper page is written after a first data item is inputted to said data circuit from an external device and temporarily held in said data circuit, and said lower page is then written after a second data item is inputted to said data circuit from the external device and temporarily held in said data circuit.

5. A semiconductor memory device according to claim 3, wherein said memory cells are divided into groups, and said data circuit is one of a plurality of data circuits, each data circuit provided for one group of memory cells.

6. A semiconductor memory device comprising:

memory cells capable of storing multi-bit data items;

a data circuit for holding a write data item to be written into a memory cell;

programming means for programming said memory cells according to the write data item held in said data circuit; and

verify means for detecting whether said programming means has written the write data item held in said data circuit, into said memory cell, and for making said programming means repeatedly apply a programming voltage to the memory cell until said programming means sufficiently programs said memory cell,

wherein each of said multi-bit data items contains an upper bit and a lower bit, said programming means first writes said upper bit into the memory cell until said verify means detects that said programming means has sufficiently programmed said memory cell, and next said programming means writes said lower bit into the memory cell.

7. A semiconductor memory device according to claim 6, wherein said lower bit is written into the memory cell after said upper bit has been written into the memory cell and after said data circuit holds a write data item inputted from an external device and the upper bit read from the memory cell.

8. A semiconductor memory device comprising:

a plurality of memory cells, each capable of storing a multi-bit data item, said memory cells divided into a plurality of groups, each containing a predetermined number of memory cells and constituting a page;

a data circuit for holding a data item to be written into a memory cell,

programming means for programming said memory cell according to the data item held in said data circuit; and

verify means for detecting whether said programming means has written the data item held in said data circuit, into said memory cell, and for making said programming means repeatedly apply a programming voltage to the memory cell until said programming means sufficiently programs said memory cell,

wherein each of said multi-bit data items contains an upper bit and a lower bit, said programming means first writes the upper bit into a memory cell of a group constituting an upper page until said verify means detects that said programming means has sufficiently programmed the memory cell of the group constituting the upper page, and next said programming means writes the lower bit into a memory cell of another group constituting a lower page.

9. A semiconductor memory device according to claim 8, wherein said lower bit is written into the memory cell after said upper bit has been written into the memory cell and after said data circuit holds a data item inputted from an external device and the upper bit read from the memory cell.

10. A semiconductor memory device according to claim 8, wherein said data circuit is one of a plurality of data circuits, each data circuit provided for one group of memory cells.