Method of estimating degradation with consideration of hot carrier effects

• US 6,047,247 A
• Filed: 12/05/1997
• Issued: 04/04/2000
• Est. Priority Date: 12/11/1996
• Status: Expired due to Fees

• Current Assignee: Matsushita Electric Industrial Company Limited (Panasonic Holdings Corporation)
• Original Assignee: Matsushita Electric Industrial Company Limited (Panasonic Holdings Corporation)
• Inventors: Iwanishi, Nobufusa, Kawakami, Yoshiyuki
• Primary Examiner(s): Hong, Stephen S.
• Assistant Examiner(s): HAMDAN, WASSEEM H
• Application Number:
  US08/986,321
• Time in Patent Office: 851 Days
• Field of Search: 714/55, 714/24, 702/125, 702/89, 702/79, 702/58, 702/117, 324/769, 395/500.07
• US Class Current: 702/117
• CPC Class Codes: G06F 11/008 Reliability or availability analysis

Abstract

There is provided a hot-carrier-delay-degradation estimation method of estimating, based on the actual operation of an LSI, deterioration in reliability thereof due to the influence of hot carriers. At a delay calculation step, there are calculated, for the cells of an LSI serving as the object of timing verification, delays, input slew and output load capacitances based on circuit information and a delay library containing delay parameters. At a delay degradation library generation step, there is generated a delay degradation library containing delay parameters at the time when the LSI has operated for a predetermined period of time. This delay degradation library is generated (i) based on the delay library and delay degradation parameters in which changes in delay of the cells due to the influence of hot carriers are expressed in terms of changes in delay parameter accompanied by the numbers of operation times of the cells and (ii) with the use of the estimated numbers of operation times, input waveform inclinations and output load capacitances of the cells. By repeating these two steps the predetermined number of repetition times, there are obtained delays of the cells at the time when the LSI has operated for a period of time equivalent to the product of the predetermined period of time and the number of repetition times.

Claims

1. A hot-carrier-delay-degradation estimation method of estimating, in timing verification of an LSI designed on a cell level, deterioration in reliability of the LSI due to the influence of hot carriers, comprising the steps of:

a delay calculation step of calculating, for cells forming an LSI serving as an object of timing verification, delays, signal slew at input terminals of said cells, and load capacitances connected to output terminals of said cells, the calculations being based on (i) circuit information comprising characteristic information of said cells, information of connection between said cells and cell-to-cell wirings, and characteristic information of said cell-to-cell wirings, and (ii) a delay library containing delay parameters to be used for calculating said delays; and

a delay degradation library generation step of generating a delay degradation library by obtaining delay parameters of said cells at the time when said LSI has operated for a predetermined period of time, and then generating said delay degradation library containing said delay parameters thus obtained, said delay parameters being obtained (i) based on said delay library and on delay degradation parameters, in which changes in delay of each of said cells due to the influence of hot carriers are expressed in terms of changes in delay parameters accompanied by a number of operation times of each of said cells, and (ii) with the use of an estimated number of operation times of each of said cells at the time when said LSI has operated for said predetermined period of time, and of said input signal slew and output load capacitances of said cells calculated in said delay calculation step,

said delay calculation step and said delay degradation library generation step being repeated a predetermined number of repetition times,

wherein on and after the second repetition time, said delay calculation step and said delay degradation library generation step being executed using, instead of said delay library, the delay degradation library generated at the delay degradation library generation step which has been just previously executed prior to a current repetition time,

whereby deterioration in reliability of said LSI due to the influence of hot carriers is estimated based on the delays of said cells calculated at the delay calculation step which has been lastly executed.

2. A hot-carrier-delay-degradation estimation method according to claim 1, wherein said delay calculation step further comprises the steps of:

a cell output waveform generation step of generating, for said cells, signal waveforms at said output terminals by using said circuit information, said delay library, the drive abilities of said cells, the characteristics of later cells driven by said cells, and the characteristics of the cell-to-cell wirings driven by said cells;

a cell input waveform generation step of generating, for said cells, waveforms at said input terminals based on said circuit information and said output waveforms of said cells generated at said cell output waveform generation step, and of obtaining input slew and output load capacitances;

a cell delay calculation step of calculating delays of said cells based on said input and output waveforms of said cells respectively generated at said cell input waveform generation step and said cell output waveform generation step; and

a wiring delay calculation step of calculating delays of said cell-to-cell wirings based on said input and output waveforms of said cells respectively generated at said cell input waveform generation step and said cell output waveform generation step.

3. A hot-carrier-delay-degradation estimation method according to claim 1, wherein said delay calculation step is arranged to calculate the delays, input slew and output load capacitances of said cells on the assumption that the input signal of said LSI propagates from cell to cell.

4. A hot-carrier-delay-degradation estimation method according to claim 3, wherein said delay calculation step further comprises the steps of:

a cell output waveform generation step of generating, for said cells, signal waveforms at said output terminals by using of said circuit information, said delay library, the drive abilities of said cells, the characteristics of later cells driven by said cells, and the characteristics of the cell-to-cell wirings driven by said cells;

a cell input waveform generation step of generating, for said cells, waveforms at said input terminals based on said circuit information and said output waveforms of said cells generated at said cell output waveform generation step, and of obtaining input slew and output load capacitances;

a cell delay calculation step of calculating delays of said cells based on said input and output waveforms of said cells respectively generated at said cell input waveform generation step and said cell output waveform generation step; and

a wiring delay calculation step of calculating delays of said cell-to-cell wirings based on said input and output waveforms of said cells respectively generated at said cell input waveform generation step and said cell output waveform generation step,

said cell output waveform generation step being arranged to generate, for said cells, output waveforms based on said input waveforms of said cells generated at said cell input waveform generation step.

5. A hot-carrier-delay-degradation estimation method according to claim 1, further comprising:

a false path detection step of detecting, in said LSI, each false path which cannot be statically sensitized; and

a cell removal step of removing a cell located at the terminal end of said false path detected in said false path detection step from the object for which each delay parameter is to be obtained at said delay degradation library generation step.

6. A hot-carrier-delay-degradation estimation method according to claim 1, further comprising a wiring delay degradation calculation step of estimating deteriorations of said cell-to-to-cell wirings with the passage of time and updating the resistance values and capacitance values of said cell-to-cell wirings contained in said circuit information.

7. A hot-carrier-delay-degradation estimation method of estimating, in timing verification of an LSI designed on a cell level, deterioration in reliability of the LSI due to the influence of hot carriers, comprising the steps of:

a step of previously preparing, for cells forming an LSI serving as an object of timing verification, a delay library group comprising a plurality of delay libraries which contain delay parameters to be used for calculating delays of said cells at the time when said cells have operated a predetermined number of operation times, and which are different in a number of cell operation times from one another;

a delay degradation library generation step (i) at which, based on said delay library group and an estimated number of operation times of each of said cells at the time when said LSI has operated for a predetermined period of time, there are obtained, for each of said cells, delay parameters at the time when each of said cells have operated respectively said estimated number of operation times and (ii) at which there is generated a delay degradation library containing said delay parameters thus obtained; and

a delay calculation step of calculating delays of said cells based on said delay degradation library, circuit information comprising characteristic information of said cells, information of connection between said cells and cell to-cell wirings, and characteristic information of said cell-to-cell wirings,

whereby deterioration in reliability of said LSI due to the influence of hot carriers is estimated based on said delays of said cells calculated at said delay calculation step.

8. A hot-carrier-delay-degradation estimation method according to claim 7, wherein said delay degradation library generation step is arranged such that, out of said delay library group, there are selected, for each cell, two delay libraries of which numbers of operation times are near to the estimated number of operation times of said cell, and that based on the delay parameters of said cell stored in said two delay libraries, there are obtained, by interpolation, delay parameters of said cell at the time when said cell has operated said estimated number of operation times.

9. A hot-carrier-delay-degradation estimation method of estimating, in timing verification of an LSI designed on a cell level, deterioration in reliability of the LSI due to the influence of hot carriers, comprising:

a delay calculation step of calculating, for cells forming an LSI serving as an object of timing verification, delays, signal slew at the input terminals and load capacitances connected to the output terminals, such calculation being made based on (i) circuit information comprising characteristic information of said cells, information of connection between said cells and the cell-to-cell wirings, and characteristic information of said cell-to-cell wirings, and (ii) a delay library containing delay parameters to be used for calculation of cell delays;

a delay degradation amount calculation step of calculating amounts of delay degradation, of said cells at the time when said LSI has operated for a predetermined period of time, such calculation being made (i) based on delay degradation parameters in which changes in delay of each of said cells due to the influence of hot carriers are expressed in terms of changes in delay parameters accompanied by a number of operation times of each of said cells, and (ii) with the use of an estimated number of operation times of each of said cells at the time when said LSI has operated for said predetermined period of time, and of the input slew and output load capacitances of said cells calculated at said delay calculation step; and

an after-deterioration delay calculation step of calculating delays of said cells by adding the delays calculated at said delay calculation step to said amounts of delay degradation calculated at said delay degradation amount calculation step,

whereby deterioration in reliability of said LSI due to the influence of hot carriers is estimated based on said delays of said cells calculated at said after-deterioration delay calculation step.