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Method for fabricating a lateral RF MOS device with an non-diffusion source-backside connection

  • US 6,048,772 A
  • Filed: 05/04/1998
  • Issued: 04/11/2000
  • Est. Priority Date: 05/04/1998
  • Status: Expired due to Term
First Claim
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1. A method of forming a lateral RF MOS device for wireless communications with a non-diffusion source-substrate connection, starting from a substrate, said method comprising the steps of:

  • providing a semiconductor substrate having a principal surface and being of a first conductivity type;

    growing an epi silicon layer on a top surface of said substrate, said epi layer having a first conductivity type;

    growing a field oxide layer on a top surface of said epi layer;

    forming a polysilicon gate;

    forming a plurality of gate channels;

    forming a plurality of drain regions and a plurality of source regions;

    forming a silicided layer on said polysilicon gate; and

    forming a plurality of metal contacts for connecting said plurality of gate channels, said plurality of drain regions and said plurality of source regions with an outside circuitry;

    wherein said formation of said silicided layer on said polysilicon gate results in said lateral RF MOS device being utilized for wireless communications.

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