Integrated resonant tunneling diode based antenna
First Claim
Patent Images
1. An antenna comprising a plurality of negative resistance devices in the form of resonant tunneling diodes formed on an upper surface of a substrate;
- at least one microstrip patch overlying the negative resistance devices and electrically connected thereto; and
a ground plane formed on the upper surface of the substrate proximate to the negative resistance devices.
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Abstract
An antenna comprising a plurality of negative resistance devices and a method for making same comprising employing a removable standoff layer to form the gap between the microstrip antenna metal and the bottom contact layer.
48 Citations
28 Claims
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1. An antenna comprising a plurality of negative resistance devices in the form of resonant tunneling diodes formed on an upper surface of a substrate;
- at least one microstrip patch overlying the negative resistance devices and electrically connected thereto; and
a ground plane formed on the upper surface of the substrate proximate to the negative resistance devices. - View Dependent Claims (2, 3, 4, 5)
- at least one microstrip patch overlying the negative resistance devices and electrically connected thereto; and
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6. An antenna comprising a plurality of resonant tunneling diodes formed on an upper surface of a substrate in an array with each of said resonant tunneling diodes being laterally spaced a distance away from a longitudinal center axis of said antenna, said distance being chosen to optimize performance of the antenna;
- at least one microstrip patch overlying the resonant tunneling diodes and electrically connected thereto; and
a ground plane formed on the upper surface of the substrate proximate to the resonant tunneling diodes.
- at least one microstrip patch overlying the resonant tunneling diodes and electrically connected thereto; and
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7. A method of manufacturing an antenna comprising the steps of:
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a) providing a substrate having a double barrier heterostructure epitaxially grown on an upper surface of the substrate; b) placing a resonant tunneling diode top contact over the upper surface of the substrate; c) etching the substrate using the top contact as an etch mask and forming a resonant tunneling diode post; d) adding a bottom contact layer for forming a ground plane on the upper surface of the substrate proximate to the resonant tunneling diode post; e) depositing an electrically insulating standoff layer over the ground plane with the standoff layer extending upward above the top contact and having an opening in the standoff layer leaving exposed a portion of the resonant tunneling diode top contact; f) depositing an antenna layer on the standoff layer, with the antenna layer extending into the opening in the standoff layer and forming an electrical connection to the top contact; and g) removing the standoff layer, at least in part. - View Dependent Claims (8, 9, 10, 11, 12, 13, 14, 15, 16, 17)
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18. An antenna comprising:
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a) a semiconductor substrate having an upper surface; b) a plurality of resonant tunnel diodes formed on the upper surface of the substrate; c) a ground plane formed on the upper surface of the substrate proximate to the plurality of resonant tunnel diodes and electrically connected thereto; d) a microstrip patch antenna formed above the resonant tunnel diodes and electrically connected thereto. - View Dependent Claims (19, 20, 21)
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22. An antenna comprising:
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a) a semiconductor substrate having an upper surface; b) a plurality of resonant tunneling diodes formed on the upper surface of the substrate, and having a top ohmic contact; c) a ground plane formed on the upper surface of the substrate proximate to the plurality of resonant tunnel diodes and electrically connected thereto; and d) a microstrip patch antenna formed above the resonant tunnel diodes and electrically connected thereto.
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23. An antenna comprising:
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a) a semiconductor substrate having an upper surface; b) a plurality of resonant tunneling diodes formed on the upper surface of the substrate, and having a top Schottky contact; c) a ground plane formed on the upper surface of the substrate proximate to the plurality of resonant tunnel diodes and electrically connected thereto; and d) a microstrip patch antenna formed above the resonant tunnel diodes and electrically connected thereto.
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24. An antenna comprising:
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a) a semiconductor substrate having an upper surface; b) a plurality of resonant tunneling diodes formed on the upper surface of the substrate; c) a ground plane formed on the upper surface of the substrate proximate to the plurality of resonant tunnel diodes and electrically connected thereto; and d) a microstrip patch antenna formed above the resonant tunnel diodes and electrically connected thereto, with the microstrip patch antenna being supported by the plurality of resonant tunnel diodes, and further being supported by a plurality of dielectric support posts. - View Dependent Claims (25, 26)
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27. An antenna comprising:
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a) a semiconductor substrate having an upper surface; b) a plurality of resonant tunneling diodes formed on the upper surface of the substrate, with the resonant tunneling diodes including a double heterostructure with a pair of tunneling barriers sandwiched about a quantum-well layer; c) a ground plane formed on the upper surface of the substrate proximate to the plurality of resonant tunnel diodes and electrically connected thereto; and d) a microstrip patch antenna formed above the resonant tunnel diodes and electrically connected thereto. - View Dependent Claims (28)
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Specification