Dosimetry cup charge collection in plasma immersion ion implantation

• US 6,050,218 A
• Filed: 09/28/1998
• Issued: 04/18/2000
• Est. Priority Date: 09/28/1998
• Status: Expired due to Fees

• Current Assignee: Axcelis Technologies Incorporated
• Original Assignee: Eaton Corp. (Wisconsin) (Eaton Corporation PLC.)
• Inventors: Kellerman, Peter, Chen, Jiong, Denholm, A. Stuart
• Primary Examiner(s): NGUYEN, KIET TUAN
• Assistant Examiner(s): Fieler, Erin
• Application Number:
  US09/162,096
• Time in Patent Office: 568 Days
• Field of Search: 156/345, 118/712, 118/723 E, 118/723 ER, 118/715
• US Class Current: 118/723.00E
• CPC Class Codes: C23C 14/48 Ion implantation
• CPC Class Codes: H01J 2237/31703 Dosimetry
• CPC Class Codes: H01J 37/32412 Plasma immersion ion implantation
• CPC Class Codes: H01J 37/3299 Feedback systems

Abstract

Method and apparatus for causing ions to impact a workpiece implantation surface. A process chamber defines a chamber interior into which one or more workpieces can be inserted for ion treatment. An energy source sets up an ion plasma within the process chamber. A support positions one or more workpieces within an interior region of the process chamber so that an implantation surface of the one or more workpieces is positioned within the ion plasma. A pulse generator in electrical communication with the workpiece support applies electrical pulses for attracting ions to the support. One or more dosimetry cups including an electrically biased ion collecting surface are disposed around the workpiece support to measure implantation current. An implantation controller monitors signals from the one or more dosimetry cups to control ion implantation of the workpiece.

Claims

1. An ion implantation system for causing ions to impact an implantation surface comprising:

a) a process chamber defining a chamber interior into which one or more workpieces can be inserted for ion treatment;

b) an energy source for setting up an ion plasma within the process chamber;

c) a support for positioning one or more workpieces within an interior region of the process chamber so that an implantation surface of the one or more workpieces is positioned within the ion plasma;

d) a pulse generator in electrical communication with the workpiece support for applying electrical pulses for attracting ions to the support;

e) one or more dosimetry cups including an electrically biased ion collecting surface parallel to the implantation surface; and

f) an implantation controller for monitoring signals from the one or more dosimetry cups to control ion implantation of the one or more workpieces.

2. The ion implantation system of claim 1 wherein the dosimetry cup further includes:

a) a negatively biased electrode to repel secondary electrons from the collecting surface and electrons from the plasma; and

b) a positively biased ion collecting surface to repel plasma ions.

3. The ion implantation system of claim 1 wherein the one or more dosimetry cup have generally circular apertures.

4. The ion implantation system of claim 1 further including multiple dosimetry cups with apertures forming a sector ring shape.

5. The ion implantation system of claim 2 wherein the negatively biased electrode includes an aperture with a diameter based on a plasma parameter.

6. The ion implantation system of claim 5 wherein the plasma parameter is plasma sheath thickness at the negatively biased electrode surface.

7. The ion implantation system of claim 5 wherein the aperture of the negatively biased electrode is less than twice the plasma sheath thickness.

8. The ion implantation system of claim 2 wherein the negatively biased electrode is biased to approximately -200 V relative to the workpiece support.

9. The ion implantation system of claim 2 wherein the positively biased ion collecting surface is biased to approximately +20 V relative to the workpiece support.

10. The ion implantation system of claim 1 further comprising a metal screen having holes to allow ions to enter the dosimetry cups.

11. The ion implantation system of claim 10 wherein the screen hole size is 0.04 centimeters and the screen transparency is about one half.

12. The ion implantation system of claim 10 wherein the negatively biased electrode is biased to approximately -50 V relative to the workpiece support.

13. The ion implantation system of claim 10 wherein the positively biased ion collecting surface is biased to approximately +10 V relative to the workpiece support.

14. The ion implantation system of claim 1 wherein signals from the dosimetry cup that are used by the controller are derived from electric current through the collecting surface of the dosimetry cup.

15. The ion implantation system of claim 1 wherein the parameter of the ion implantation process controlled is the duration of the implantation of the workpiece.

16. The ion implantation system of claim 1 wherein the dosimetry cups are imbedded in the workpiece support to eliminate stray capacitance to ground thereby avoiding displacement current errors.

17. The ion implantation system of claim 1 wherein signals from the dosimetry cup are extracted by means of a high band-width fiber optic transmitter to prevent stray capacitance which could cause a displacement current error.