Method of manufacturing a thin-film transistor with reinforced drain and source electrodes

• US 6,050,827 A
• Filed: 01/14/1993
• Issued: 04/18/2000
• Est. Priority Date: 12/29/1982
• Status: Expired due to Fees

• Current Assignee: Sharp Kabushiki Kaisha (Hon Hai Precision Industry Co., Ltd.)
• Original Assignee: Sharp Kabushiki Kaisha (Hon Hai Precision Industry Co., Ltd.)
• Inventors: Hishida, Tadanori, Takechi, Sadatoshi, Funada, Fumiaki
• Primary Examiner(s): WILCZEWSKI, MARY A
• Application Number:
  US08/004,661
• Time in Patent Office: 2,651 Days
• Field of Search: 437/40, 437/41, 437/189, 437/245, 257/42
• US Class Current: 438/40
• CPC Class Codes: H01L 29/41733 for thin film transistors with insulated gate
• CPC Class Codes: H01L 29/458 for thin film silicon, e.g. source or drain electrode
• CPC Class Codes: H01L 29/4908 for thin film semiconductor, e.g. gate of TFT
• CPC Class Codes: H01L 29/66765 Lateral single gate single channel transistors with inverted structure, i.e. the channel layer is formed after the gate
• CPC Class Codes: H01L 29/78681 having a semiconductor body comprising AIIIBV or AIIBVI or AIVBVI semiconductor materials, or Se or Te
• CPC Class Codes: Y10S 438/944 Shadow

Abstract

A thin film transistor where source and drain electrodes are film laminates including at least two layers. A first layer film of the laminate, which is formed to a thickness of 10 to 700 Å is in ohmic contact with underlying semiconductor film. A second layer film, formed on the first layer film has a thickness of more than about 2000 Å and is a material having a sufficient adhesion strength even when formed at a temperature which is less than the temperature corresponding to the materials vapor pressure. Further, the materials used for the source and drain electrodes can be formed into thin films by ordinary sputtering or vacuum deposition techniques, low in cost, and readily available. A thin film transistor according to the present invention is formed on a substrate by the steps of: forming a gate electrode on the substrate; oxidizing the gate electrode to form a gate insulating film, the gate electrode and the gate insulating film forming a step; forming a thin film semiconductor on the gate insulating film; forming a first layer film portion of a source and drain electrode film laminate on the thin film semiconductor and in ohmic contact with the thin film semiconductor; and forming a second layer film portion of the source and drain electrode film laminate, the second layer film being an adhesion layer, convering the first layer film, and having a sufficient thickness to provide a continuous film across the step.

Claims

1. A method of forming a thin film transistor on a substrate, comprising the steps of:

(a) forming a gate electrode on a substrate;

(b) oxidizing the gate electrode to form a gate insulating film on the gate electrode, the gate electrode and the gate insulating film forming a step;

(c) forming a thin film semiconductor on the gate insulating film; and

(d) forming a source and drain electrode film laminate on the thin film semiconductor, including the sub-steps of

(i) forming a resist film on a first portion of the thin film semiconductor to provide a lift-off mask,

(ii) forming, while the substrate is at a temperature less than the temperature corresponding to the vapor pressure of the material of the thin film semiconductor, a first layer film portion of the source and drain electrode film laminate on the resist film and on exposed portions of the thin film semiconductor and in ohmic contact with the thin film semiconductor, the first layer film portion having a mesh structure,

(iii) forming a second layer film portion of the source and drain electrode film laminate on the first layer film portion and in contact with the thin film semiconductor through the mesh structure of the first layer film portion, the second layer film portion having a greater adhesion strength than the first layer film portion, reinforcing the first layer film portion and having a thickness sufficient to provide a continuous film across the step, and

(iv) removing the lift-off mask from the first portion of the thin film semiconductor.

2. A method as recited in claim 1, wherein:

the thin film semiconductor includes tellurium; and

the temperature of the substrate in sub-step (ii) is below about 100°

C.

3. A method as recited in claim 2, wherein:

the first layer film portion includes nickel; and

the second layer film portion includes aluminum.

4. A method as recited in claim 1, wherein the first portion of the thin film semiconductor is located between and separates a source electrode and a drain electrode formed by the source and drain electrode film laminate when the lift-off mask is removed in sub-step (iv).

5. A method of forming a thin film transistor on a substrate, comprising the steps of:

(a) forming a gate electrode on a substrate;

(b) oxidizing the gate electrode to form a gate insulating film on the gate electrode, the gate electrode and the gate insulating film having a step;

(c) forming a thin film semiconductor on the gate insulating film; and

(d) forming a source and drain electrode film laminate composed of oxidation-resistant metal on the thin film semiconductor, including the sub-steps of

(i) forming a resist film on a first portion of the thin film semiconductor to provide a lift-off mask,

(ii) forming, while the substrate is at a temperature less than the temperature corresponding to the vapor pressure of the material of the thin film semiconductor, a first layer film portion of the source and drain electrode film laminate on the resist film and on exposed portions of the thin film semiconductor and in ohmic contact with the thin film semiconductor, the first layer film portion having a mesh structure and being made of a metal having an ohmic contact capability,

(iii) forming, while the substrate is at a temperature less than the temperature corresponding to the vapor pressure of the material of the thin film semiconductor, a second layer film portion of the source and drain electrode film laminate on the first layer film portion and in contact with the thin film semiconductor through the mesh structure of the first layer film portion, the second layer film portion being composed of a metal which is different from that of the first layer portion and which has a higher adhesion strength than the first layer film portion, the second layer film portion reinforcing the first layer film portion and having a thickness sufficient to provide a continuous film across the step, and

(iv) removing the lift-off mask from the first portion of the thin film semiconductor.

6. A method as recited in claim 5, wherein the thin film semiconductor includes tellurium and the temperature of the substrate in sub-step (ii) is below about 100°

C.

7. A method as recited in claim 5, wherein the first portion of the thin film semiconductor is located between and separates a source electrode and a drain electrode formed by the source and drain electrode film laminate when the lift-off mask is removed in sub-step (iv).

8. A method as recited in claim 5, wherein:

the first layer film portion includes nickel; and

the second layer film portion includes a material selected from a group consisting of aluminum, titanium and tantalum.