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Semiconductor supporting device

  • US 6,051,303 A
  • Filed: 07/28/1998
  • Issued: 04/18/2000
  • Est. Priority Date: 08/06/1997
  • Status: Expired due to Term
First Claim
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1. A semiconductor-supporting device comprising a substrate made of an aluminum nitride-based ceramic material and having a semiconductor-placing surface, wherein an orientation degree of the aluminum nitride-based ceramic material specified by the following formula is not less than 1.1 and not more than 2.0.


  • space="preserve" listing-type="equation">Orientation degree=[I'"'"'(002)/I'"'"'(100)]/[I(002)/I(100)]
in which in an X-ray diffraction measurement, I'"'"'(002) is a diffraction intensity of a (002) face of the aluminum nitride-based ceramic material when X-rays are irradiated from the semiconductor-placing surface, I'"'"'(100) is a diffraction intensity of a (100) face of the aluminum nitride-based ceramic material when X-rays are irradiated from the semiconductor-placing surface, I(002) is a diffraction intensity of the (002) face of the aluminum nitride ceramic according to a JCPDS Card No. 25-1133, and I(100) is a diffraction intensity of the (100) face of the aluminum nitride ceramic according to a JCPDS Card No. 25-1133.

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