Semiconductor supporting device
First Claim
1. A semiconductor-supporting device comprising a substrate made of an aluminum nitride-based ceramic material and having a semiconductor-placing surface, wherein an orientation degree of the aluminum nitride-based ceramic material specified by the following formula is not less than 1.1 and not more than 2.0.
in which in an X-ray diffraction measurement, I'"'"'(002) is a diffraction intensity of a (002) face of the aluminum nitride-based ceramic material when X-rays are irradiated from the semiconductor-placing surface, I'"'"'(100) is a diffraction intensity of a (100) face of the aluminum nitride-based ceramic material when X-rays are irradiated from the semiconductor-placing surface, I(002) is a diffraction intensity of the (002) face of the aluminum nitride ceramic according to a JCPDS Card No. 25-1133, and I(100) is a diffraction intensity of the (100) face of the aluminum nitride ceramic according to a JCPDS Card No. 25-1133.
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Abstract
A semiconductor-supporting device comprising a substrate made of an aluminum nitride-based ceramic material and having a semiconductor-placing surface, wherein an orientation degree of the aluminum nitride-based ceramic material specified by the following formula is not less than 1.1 and not more than 2.0.
Orientation degree=[I'"'"'(002)/I'"'"'(100)]/[I(002)/I(100)]
in which in an X-ray diffraction measurement, I'"'"'(002) is a diffraction intensity of a (002) face of the aluminum nitride-based ceramic material when X-rays are irradiated from the semiconductor-placing surface, I'"'"'(100) is a diffraction intensity of a (100) face of the aluminum nitride-based ceramic material when X-rays are irradiated from the semiconductor-placing surface, I(002) is a diffraction intensity of the (002) face of the aluminum nitride ceramic according to a JCPDS Card No. 25-1133, and I(100) is a diffraction intensity of the (100) face of the aluminum nitride ceramic according to a JCPDS Card No. 25-1133.
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Citations
5 Claims
- 1. A semiconductor-supporting device comprising a substrate made of an aluminum nitride-based ceramic material and having a semiconductor-placing surface, wherein an orientation degree of the aluminum nitride-based ceramic material specified by the following formula is not less than 1.1 and not more than 2.0.
- space="preserve" listing-type="equation">Orientation degree=[I'"'"'(002)/I'"'"'(100)]/[I(002)/I(100)]
in which in an X-ray diffraction measurement, I'"'"'(002) is a diffraction intensity of a (002) face of the aluminum nitride-based ceramic material when X-rays are irradiated from the semiconductor-placing surface, I'"'"'(100) is a diffraction intensity of a (100) face of the aluminum nitride-based ceramic material when X-rays are irradiated from the semiconductor-placing surface, I(002) is a diffraction intensity of the (002) face of the aluminum nitride ceramic according to a JCPDS Card No. 25-1133, and I(100) is a diffraction intensity of the (100) face of the aluminum nitride ceramic according to a JCPDS Card No. 25-1133. - View Dependent Claims (2, 3, 4, 5)
Specification
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- Resources
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Current AssigneeNGK Insulators Limited
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Original AssigneeNGK Insulators Limited
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InventorsKatsuda, Yuji, Araki, Kiyoshi, Ohashi, Tsuneaki
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Primary Examiner(s)Watkins, III, William P.
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Application NumberUS09/122,894Time in Patent Office630 DaysField of Search428/137, 428/138, 428/139, 428/140, 428/698, 279/128, 264/647, 264/664, 264/666, 264/668, 118/500, 269/53, 269/329, 501/98.4US Class Current428/138CPC Class CodesG03F 7/70691 Handling of masks or workpi...H01L 21/6831 using electrostatic chucksY10T 279/23 with magnetic or electrosta...Y10T 428/24322 Composite web or sheetY10T 428/24331 including nonapertured comp...Y10T 428/24339 KeyedY10T 428/24347 From both sides
