Semiconductor pressure sensor including reference capacitor on the same substrate
First Claim
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1. A semiconductor pressure sensor comprising:
- a plurality of pressure sensing electrostatic capacitances; and
a reference electrostatic capacitance;
wherein said pressure sensing electrostatic capacitances and said reference electrostatic capacitance are disposed on one side of a silicon chip.
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Abstract
A semiconductor pressure sensor utilizing electrostatic capacitance has a plurality of pressure sensing electrostatic capacitances and a reference electrostatic capacitance formed on one side of a silicon chip. As a movable electrode, the pressure sensing electrostatic capacitances each have a diaphragm, which may have a displacement portion composed of a central area thereof, and a peripheral portion which is more deformable than the central portion.
66 Citations
27 Claims
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1. A semiconductor pressure sensor comprising:
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a plurality of pressure sensing electrostatic capacitances; and a reference electrostatic capacitance; wherein said pressure sensing electrostatic capacitances and said reference electrostatic capacitance are disposed on one side of a silicon chip. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A semiconductor pressure sensor comprising:
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a plurality of pressure sensing electrostatic capacitances; and a reference electrostatic capacitance; wherein said pressure sensing electrostatic capacitances and said reference electrostatic capacitance are disposed on one side of a silicon chip; and wherein said reference capacitance is a temperature sensor.
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12. A semiconductor pressure sensor of electrostatic capacitance type, comprising:
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a substrate; a fixed electrode provided on said substrate; a movable electrode arranged opposite said fixed electrode, and supported at a periphery thereof; wherein said movable electrode has a displacement portion composed of a central area thereof, and a peripheral portion which is more deformable than said central portion; and wherein said fixed electrode has a maximum planar extent not larger than a planar extent of said central area of said movable electrode. - View Dependent Claims (13, 14)
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15. An electrostatic capacitance type sensor, comprising:
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a substrate; a fixed electrode on said substrate; and a movable electrode having a parallel displacement portion mounted on said substrate, to be deformed by receiving an external force; wherein a parallel component of parasitic electrostatic capacitance produced in the periphery of said sensor has a magnitude which is no greater than a base capacitance of the sensor portion. - View Dependent Claims (16)
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17. A semiconductor pressure sensor comprising:
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a substrate; at least a first pressure sensing electrostatic capacitance which is coupled to receive and measure an ambient pressure; at least a second pressure sensing electrostatic capacitance which is coupled to receive and measure an absolute pressure; and a reference electrostatic capacitance which is insulated from effects of changing pressure, and is coupled to at least one of said at least a first pressure sensing electrostatic capacitance and said at least a second pressure sensing electrostatic capacitance, for sensing temperature; wherein said first, second and reference electrostatic capacitances are formed on the same side of said substrate. - View Dependent Claims (18, 19, 20, 21, 22, 23)
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24. A method of making a semiconductor pressure sensor, comprising:
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providing a planar substrate; forming a plurality of pressure sensing electrostatic capacitances on a single surface of said substrate; and forming a circuit for processing output signals from said pressure sensing electrostatic capacitances, on the same surface of said substrate on which said pressure sensing electrostatic capacitances are formed. - View Dependent Claims (25, 26, 27)
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Specification