Method of forming an integrated circuit spiral inductor with ferromagnetic liner
First Claim
1. A method of forming a monolithic inductor comprising the steps of:
- (a) etching a first spiral trench into a first dielectric layer formed over a substrate, said first dielectric having a top surface;
(b) depositing a first metal in said first spiral trench; and
(c) planarizing said deposited first metal to obtain a first metal coil in said first spiral trench, said first metal coil having a continual top surface that is planar with said top surface of said first dielectric layer.
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Abstract
High quality factor (Q) spiral and toroidal inductor and transformer are disclosed that are compatible with silicon very large scale integration (VLSI) processing, consume a small IC area, and operate at high frequencies. The spiral inductor has a spiral metal coil deposited in a trench formed in a dielectric layer over a substrate. The metal coil is enclosed in ferromagnetic liner and cap layers, and is connected to an underpass contact through a metal filled via in the dielectric layer. The spiral inductor also includes ferromagnetic cores lines surrounded by the metal spiral coil. A spiral transformer is formed by vertically stacking two spiral inductors, or placing them side-by-side over a ferromagnetic bridge formed below the metal coils and cores lines. The toroidal inductor includes a toroidal metal coil with a core having ferromagnetic strips. The toroidal metal coil is segmented into two coils each having a pair of ports to form a toroidal transformer.
103 Citations
15 Claims
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1. A method of forming a monolithic inductor comprising the steps of:
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(a) etching a first spiral trench into a first dielectric layer formed over a substrate, said first dielectric having a top surface; (b) depositing a first metal in said first spiral trench; and (c) planarizing said deposited first metal to obtain a first metal coil in said first spiral trench, said first metal coil having a continual top surface that is planar with said top surface of said first dielectric layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15)
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Specification