Method of manufacturing semiconductor article

• US 6,054,363 A
• Filed: 11/12/1997
• Issued: 04/25/2000
• Est. Priority Date: 11/15/1996
• Status: Expired due to Fees

• Current Assignee: Canon Kabushiki Kaisha (Canon Inc.)
• Original Assignee: Canon Kabushiki Kaisha (Canon Inc.)
• Inventors: Sakaguchi, Kiyofumi, Yonehara, Takao, Atoji, Tadashi
• Primary Examiner(s): Utech, Benjamin
• Assistant Examiner(s): Chen, Kin-Chan
• Application Number:
  US08/968,664
• Time in Patent Office: 895 Days
• Field of Search: 438/745, 438/753, 438/406, 438/409, 438/960
• US Class Current: 438/406
• CPC Class Codes: H01L 21/76259 with separation/delamination along a porous layer

Abstract

A method of manufacturing a semiconductor article comprises steps of preparing a first substrate including a silicon substrate having a porous silicon layer and a nonporous semiconductor layer arranged on the porous silicon layer, bonding the first substrate and a second substrate to produce a multilayer structure with the nonporous semiconductor layer located inside, separating the first and second substrates of the multilayer structure from each other along the porous silicon layer by heating the multilayer structure and removing the porous silicon layer remaining on the separated second substrate.

Claims

1. A method of manufacturing a semiconductor article, characterized by comprising steps of:

preparing a first substrate including a silicon substrate having a porous silicon layer and a nonporous semiconductor layer arranged on said porous silicon layer;

bonding said first substrate and a second substrate to produce a multilayer structure with said nonporous semiconductor layer located inside;

separating said multilayer structure along said porous silicon layer by causing an electric current to flow through said porous silicon layer for heating said multilayer structure, so that said nonporous semiconductor layer is arranged on said separated second substrate.

4. A method of manufacturing a semiconductor article according to claims 1 or 2, wherein said heating is an operation of partly heating said multilayer structure.

5. A method of manufacturing a semiconductor article according to claim 4, wherein said laser is carbon dioxide laser.

6. A method of manufacturing a semiconductor article according to claim 5, wherein said laser is carbon dioxide laser.

7. A method of manufacturing a semiconductor article according to claim 4, wherein said heating is realized by causing an electric current to flow through said porous silicon layer.

8. A method of manufacturing a semiconductor article according to claims 1 or 2, wherein a porous silicon layer is formed on the two surfaces of said silicon substrate and thereafter a nonporous semiconductor layer is formed on the two porous silicon layers.

9. A method of manufacturing a semiconductor article according to claims 1 or 2, wherein said porous silicon layer is obtained through anodization of said silicon substrate.

10. A method of manufacturing a semiconductor article according to claims 1, 2, or 3, wherein said first substrate is made to carry thereon said porous silicon layer formed by implanting ions of an element selected from a rare gas element, hydrogen and nitrogen into said silicon substrate into an ion implantation region of said silicon substrate having a depth from the surface of said substrate and comprises a surface layer constituted by said nonporous semiconductor layer.

11. A method of manufacturing a semiconductor article according to claims 1, 2, or 3, wherein said first substrate is formed by forming said porous silicon layer in said silicon substrate and thereafter forming said nonporous semiconductor layer on said porous silicon layer.

12. A method of manufacturing a semiconductor article according to claims 1, 2, or 3, wherein said nonporous semiconductor layer is constituted by a single crystal silicon layer.

13. A method of manufacturing a semiconductor article according to claim 12, wherein said single crystal silicon layer is formed by epitaxial growth.

14. A method of manufacturing a semiconductor article according to claim 12, wherein said first substrate comprises a silicon oxide layer formed on the surface of said single crystal silicon layer.

15. A method of manufacturing a semiconductor article according to claim 14, wherein said silicon oxide layer is formed by thermal oxidation.

16. A method of manufacturing a semiconductor article according to claims 1, 2, or 3, wherein said nonporous semiconductor layer comprises a compound semiconductor layer.

17. A method of manufacturing a semiconductor article according to claim 16, wherein said compound semiconductor layer has a single crystal structure.

18. A method of manufacturing a semiconductor article according to claims 1, 2 or 3, wherein said second substrate is a single crystal silicon substrate.

19. A method of manufacturing a semiconductor article according to claims 1, 2 or 3, wherein said second substrate is prepared by forming an oxide film on a single crystal silicon substrate.

20. A method of manufacturing a semiconductor article according to claims 1, 2 or 3, wherein said second substrate is a light transmitting substrate.

21. A method of manufacturing a semiconductor article according to claim 20, wherein said light transmitting substrate is a glass substrate.

22. A method of manufacturing a semiconductor article according to claims 1, 2 or 3, wherein said bonding step is conducted by bringing said two substrate into close contact with each other.

23. A method of manufacturing a semiconductor article according to claims 1, 2 or 3, wherein said step is conducted through anodic bonding, pressurization or heat treatment.

24. A method of manufacturing a semiconductor article according to claims 1, 2 or 3, wherein said step of removing said porous silicon layer is performed by polishing said substrate.

25. A method of manufacturing a semiconductor article according to claims 1, 2 or 3, wherein said step of removing said porous silicon layer is performed by etching said substrate.

26. A method of manufacturing a semiconductor article according to claim 25, wherein said etching is conducted by using hydrofluoric acid.

2. A method of manufacturing a semiconductor article, characterized by comprising steps of:

preparing a first substrate including a silicon substrate having a porous silicon layer and a nonporous semiconductor layer arranged on said porous silicon layer;

bonding said first substrate and a second substrate to produce a multilayer structure with said nonporous semiconductor layer located inside;

separating said multilayer structure along said porous silicaon layer by locally heating said porous silicon layer and its proximity, so that said nonporous semiconductor layer is arranged on said separated second substrate.

3. A method of manufacturing a semiconductor article, characterized by comprising steps of:

preparing a first substrate including a silicon substrate having a porous silicon layer and a nonporous semiconductor layer arranged on said porous silicon layer;

bonding said first substrate and a second substrate to produce a multilayer structure with said nonporous semiconductor layer located inside;

separating said multilayer structure along said porous silicon layer by laser irradiation for heating said multilayer structure, so that said nonporous semiconductor layer is arranged on said separated second substrate.

27. A method of separating a semiconductor layer, comprising steps of:

preparing a first substrate including a silicon substrate having a porous silicon layer and a nonporous semiconductor layer arranged on said porous silicon layer;

bonding said first substrate and a second substrate to produce a multilayer structure with said nonporous semiconductor layer located inside;

separating said nonporous semiconductor layer from said first substrate along said porous silicon layer by laser irradiation for heating said multilayer structure.

28. A method of separating a semiconductor layer, comprising steps of:

preparing a first substrate including a silicon substrate having a porous silicon layer and a nonporous semiconductor layer arranged on said porous silicon layer;

bonding said first substrate and a second substrate to produce a multilayer structure with said nonporous semiconductor layer located inside;

separating said nonporous semiconductor layer from said first substrate along said porous silicon layer by causing an electric current to flow through said porous silicon layer for heating said multilayer structure.

29. A method of separating a semiconductor layer, comprising steps of:

preparing a first substrate including a silicon substrate having a porous silicon layer and a nonporous semiconductor layer arranged on said porous silicon layer;

bonding said first substrate and a second substrate to produce a multilayer located inside;

separating said nonporous semiconductor layer from said first substrate along said porous silicon layer by locally heating said porous silicon layer and its proximity.