Nonvolatile memory cell using microelectromechanical device
First Claim
1. A nonvolatile memory cell comprising:
- an insulating layer fabricated on a substrate;
an electrically conductive cantilever on said insulating layer, said cantilever supported near a first end thereof and having a second end thereof free for movement;
an electrical conductor in contact with said cantilever near said first end; and
a contact region comprising an FET gate on said substrate near said second end of said cantilever, said contact region adapted to receive and store a charge therein when contacted by said second end of said cantilever.
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Accused Products
Abstract
A nonvolatile memory cell comprises a conductive cantilever beam having a free end in a first charge state, a first FET having a conductive gate in a second charge state and a pull-in electrode adapted to bring the cantilever beam into electrical contact with the gate to effect a charge state change in the gate. A pull-in electrode input is connected to the electrode, a cantilever input is connected to the cantilever, a column select input is connected to the first FET and a row select input is connected to the first FET. The nonvolatile memory cell is selected by signals applied to the row select input and the column select input. The cell also includes a second FET connected between the cantilever beam and the cantilever input for controlling the passage of signals from the cantilever input to the cantilever beam and a third FET connected between the pull-in electrode and the pull-in electrode input for controlling the passage of signals from the pull-in electrode input to the electrode. The second FET and third FET have gates connected to the row select input. The row select input turns on the second FET and the third FET to allow the passage of signals from the pull-in electrode input to the pull-in electrode and from the cantilever input to the cantilever beam when the nonvolatile memory cell is selected.
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Citations
31 Claims
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1. A nonvolatile memory cell comprising:
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an insulating layer fabricated on a substrate; an electrically conductive cantilever on said insulating layer, said cantilever supported near a first end thereof and having a second end thereof free for movement; an electrical conductor in contact with said cantilever near said first end; and a contact region comprising an FET gate on said substrate near said second end of said cantilever, said contact region adapted to receive and store a charge therein when contacted by said second end of said cantilever. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A nonvolatile memory cell comprising:
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a first conductive element comprising a cantilever beam in a first charge state; a second conductive element comprising an FET gate in a second charge state; means for bringing the first and second conductive elements into electrical contact to effect a charge state change in one of said first and second conductive elements; and means for sensing the charge state in said one of said first and second conductive elements. - View Dependent Claims (11, 12, 13, 14, 15)
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16. A nonvolatile memory cell comprising:
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a conductive cantilever beam having a free end in a first charge state; a sensing element comprising an FET having a conductive element in a second charge state, said sensing element adapted to sense the charge state in said conductive element; and an electrode adapted to bring the cantilever beam into electrical contact with the conductive element to effect a charge state change in said conductive element. - View Dependent Claims (17, 18, 19, 20, 21, 22)
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23. A method of creating and sensing a charge state in a nonvolatile memory cell comprising the steps of:
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a) providing a first conductive element comprising a cantilever beam in a first charge state; b) providing a second conductive element comprising an FET gate in a second charge state; c) electrically contacting the first and second conductive elements to effect a charge state change in one of said first and second conductive elements; and d) sensing the charge state in said one of said first and second conductive elements.
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24. A process for fabricating a nonvolatile memory cell comprising the steps of:
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a) providing an insulating layer on a substrate; b) creating on said substrate a sensing element, a support and an electrode; c) depositing a removable layer over said sensing element, support and electrode; d) depositing over said removable, nonconductive layer an electrically conductive layer in contact with said support; and e) removing said removable layer such that said electrically conductive layer comprises a cantilever supported by said support and having a movable free end over said sensing element, said sensing element being adapted to receive and store a charge therein when said sensing element is at a predetermined potential and a bias is applied to said electrode to pull said cantilever toward the electrode to cause said free end of said cantilever to contact said sensing element. - View Dependent Claims (25, 26, 27)
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28. A nonvolatile memory cell comprising:
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a conductive cantilever beam having a free end in a first charge state; a first sensing element comprising an FET having a conductive element in a second charge state; a pull-in electrode adapted to bring the cantilever beam into electrical contact with the conductive element to effect a charge state change in said conductive element; a pull-in electrode input (PI) connected to said electrode; a cantilever input (CL) connected to said cantilever; a column select input (CS) connected to said first sensing element; a row select input (RS) connected to said first sensing element, the nonvolatile memory cell being selected by signals applied to the row select input and the column select input; a second control element connected between said cantilever beam and the cantilever input for controlling the passage of signals from the cantilever input to the cantilever beam; and a third control element connected between said pull-in electrode and the pull-in electrode input for controlling the passage of signals from the pull-in electrode input to the electrode. - View Dependent Claims (29, 30, 31)
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Specification