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Nonvolatile memory cell using microelectromechanical device

  • US 6,054,745 A
  • Filed: 01/04/1999
  • Issued: 04/25/2000
  • Est. Priority Date: 01/04/1999
  • Status: Expired due to Fees
First Claim
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1. A nonvolatile memory cell comprising:

  • an insulating layer fabricated on a substrate;

    an electrically conductive cantilever on said insulating layer, said cantilever supported near a first end thereof and having a second end thereof free for movement;

    an electrical conductor in contact with said cantilever near said first end; and

    a contact region comprising an FET gate on said substrate near said second end of said cantilever, said contact region adapted to receive and store a charge therein when contacted by said second end of said cantilever.

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