Thin film electrostatic shield for inductive plasma processing

• US 6,056,848 A
• Filed: 09/10/1997
• Issued: 05/02/2000
• Est. Priority Date: 09/11/1996
• Status: Expired due to Fees

• Current Assignee: Cambridge Technology Partners (Massachusetts), Inc. (Open Text Corporation)
• Original Assignee: Cambridge Technology Partners (Massachusetts), Inc. (Open Text Corporation)
• Inventors: Daviet, Jean-Fran.cedilla.ois
• Primary Examiner(s): DANG, THI D
• Application Number:
  US08/926,873
• Time in Patent Office: 965 Days
• Field of Search: 156/345, 118/723 I, 118/723 IR, 216/68, 438/729, 438/730
• US Class Current: 156/345.48
• CPC Class Codes: H01J 37/321 the radio frequency energy being inductively coupled to the plasma

Abstract

A plasma reactor and methods for processing semiconductor substrates are described. An induction coil inductively couples power into the reactor to produce a plasma. A thin electrostatic shield is interposed between the induction coil and plasma to reduce capacitive coupling. The shield is electromagnetically thin such that inductive power passes through the shield to sustain the plasma while capacitive coupling is substantially attenuated. Reducing capacitive coupling reduces modulation of the plasma potential relative to the substrate and allows for more controllable processing.

Claims

1. An apparatus comprising:

a chamber wall forming a process chamber;

an electrostatic shield adjacent to at least a portion of the process chamber;

the electrostatic shield comprising a highly conductive material such that electrostatic fields are substantially prevented from penetrating through the electrostatic shield into the process chamber; and

at least a portion of the electrostatic shield being sufficiently thin such that inductive electromagnetic fields penetrate through the electrostatic shield into the process chamber at a desired level for processing.

2. The apparatus of claim 1 wherein the chamber wall comprises an electrically resistive material and the electrostatic shield substantially covers the electrically resistive material of the chamber walls.

7. The apparatus according to claim 1 further comprising an inductor adjacent to the process chamber for inductively coupling power into the process chamber.

8. The apparatus according to claim 7, wherein the inductor is a loop-like coil.

9. The apparatus according to claim 7, wherein the inductor is a spiral-like coil.

10. The apparatus according to claim 7, wherein the inductor is a solenoid-like coil.

11. The apparatus according to claim 7, wherein the inductor is a helical resonator.

12. An apparatus according to claim 7, further comprising a gas inlet for providing gases into the process chamber, wherein the inductor inductively couples power into the process chamber to sustain a plasma in the process chamber.

22. The apparatus of claim 1 wherein the electrostatic shield comprises metal.

23. The apparatus of claim 1 wherein the electrostatic shield comprises titanium nitride.

24. The apparatus of claim 1 wherein the electrostatic shield comprises a thin film.

25. The apparatus of claim 1 wherein:

the inductor includes a conductive core; and

the electrostatic shield comprises a thin film deposited around at least a portion of the inductor and is isolated from the conductive core.

26. The apparatus of claim 1 wherein the electrostatic shield comprises a thin film deposited on the chamber wall.

27. The apparatus of claim 1 wherein the electrostatic shield has a thickness of less than about 250 microns.

28. The apparatus of claim 1 wherein the electrostatic shield has a thickness of less than about 5 microns.

29. The apparatus of claim 1 wherein:

the inductor generates an inductive electric field;

the electrostatic shield is configured such that there is a continuous path along the shield in the direction of the inductive electric field; and

a portion of the shield along the continuous path is sufficiently thin to prevent a countervailing current from being formed which would substantially reduce inductive coupling from the inductor to the plasma.

30. The apparatus of claim 1 wherein the electrostatic shield provides a continuous shield body along the shielded portion of the process chamber.

31. The apparatus of claim 30 wherein substantially the entire region of the process chamber adjacent to the inductor is shielded.

32. The apparatus of claim 1 wherein the thin electrostatic shield comprises a thin film having a thickness less than three times the skin depth of the thin film for a given frequency of the source of radio frequency power.

33. The plasma reactor of claim 32 wherein the frequency is 13.56 MHz.

3. An apparatus comprising:

a chamber wall forming a process chamber;

the chamber wall comprising an electrically resistive material having a resistivity greater than about 1 Ω

cm;

an electrostatic shield adjacent to at least a portion of the process chamber;

the electrostatic shield comprising a highly conductive material having a resistivity of less than about 1 Ω

cm such that electrostatic fields are substantially prevented from penetrating through the electrostatic shield into the process chamber; and

the electrostatic shield being sufficiently thin such that inductive electromagnetic fields penetrate through the electrostatic shield into the process chamber at a desired level for processing,

wherein the electrostatic shield comprises a plurality of regions each having a different thickness of the conductive material.

5. The apparatus according to claim 3 wherein at least one of the conductive sectors is electrically coupled to a ground potential.

6. The apparatus according to claim 3 wherein at least one of the conductive sectors is electrically coupled to a power supply.

4. An apparatus comprising:

a chamber wall forming a process chamber;

the chamber wall comprising an electrically resistive material having a resistivity greater than about 1 Ω

cm;

an electrostatic shield adjacent to at least a portion of the process chamber, the electrostatic shield comprising a highly conductive material having a resistivity of less than about 1 Ω

cm such that electrostatic fields are substantially prevented from penetrating through the electrostatic shield into the process chamber; and

the electrostatic shield being sufficiently thin such that inductive electromagnetic fields penetrate through the electrostatic shield into the process chamber at a desired level for processing,

wherein the electrostatic shield forms a plurality of substantially non-conductive gaps such that the electrostatic shield includes a plurality of conductive sectors electrically isolated from one another.

13. A plasma reactor for processing a semiconductor substrate comprising:

a chamber wall forming a plasma chamber within which a plasma is produced;

the plasma including at least one plasma product for processing the substrate;

a source of radio frequency power;

an inductor adjacent to the plasma chamber and coupled to the source of radio frequency power to inductively couple power into the plasma chamber;

a gas inlet for providing gas into the plasma chamber;

a gas exhaust for exhausting gas from the plasma chamber;

an electrostatic shield positioned between at least a portion of the inductor and at least a portion of the plasma such that the electrostatic shield reduces capacitive coupling from the inductor to the plasma relative to a level of capacitive coupling that would be present in the absence of the thin electrostatic shield;

wherein at least a portion of the electrostatic shield has a thickness less than about 250 microns such that inductively coupled power from the inductor is coupled through the electrostatic shield to sustain the plasma; and

wherein the substrate is positioned such that the substrate is exposed to the at least one plasma product for processing.

14. The plasma reactor according to claim 13 wherein the electrostatic shield comprises a thin film having a thickness of less than about 100 microns.

15. The plasma reactor according to claim 13 wherein the electrostatic shield comprises a thin film having a thickness of less than about 5 microns.

16. The plasma reactor according to claim 13 wherein the electrostatic shield comprises a conductive material.

17. The plasma reactor according to claim 13 wherein the electrostatic shield comprises a material having a resistivity of less than about 1 Ω

cm.

18. The plasma reactor according to claim 13 wherein the electrostatic shield comprises a material selected from the group consisting of aluminum and titanium nitride.

19. The plasma reactor according to claim 13 wherein the electrostatic shield comprises a thin film having a thickness less than three times the skin depth of the thin film for a given frequency of the source of radio frequency power.

21. The plasma reactor according to claim 13 wherein the thin electrostatic shield is deposited on at least a portion of the chamber wall.

34. The plasma reactor of claim 13 wherein the electrostatic shield comprises a material which would substantially block inductive coupling at thicknesses greater than 250 microns.

35. The plasma reactor of claim 13 wherein:

the inductor generates an inductive electric field;

the electrostatic shield is configured such that there is a continuous path along the shield in the direction of the inductive electric field; and

a portion of the shield along the continuous path is sufficiently thin to prevent a countervailing current from being formed which would substantially reduce inductive coupling from the inductor to the plasma.

36. The plasma reactor of claim 13 wherein the electrostatic shield provides a continuous shield body along the shielded portion of the process chamber.

37. The plasma reactor of claim 36 wherein substantially the entire region of the process chamber adjacent to the inductor is shielded.

38. The plasma reactor of claim 14 wherein the electrostatic shield comprises a highly conductive material.

39. The plasma reactor according to claim 19 wherein the frequency is 13.56 MHz.

20. A plasma reactor for processing a semiconductor substrate comprising:

a non-conductive chamber wall forming a plasma chamber within which a plasma is produced;

the plasma including at least one plasma product for processing the substrate;

a source of radio frequency power;

an inductor adjacent to the plasma chamber and coupled to the source of radio frequency power to inductively couple power into the plasma chamber;

a gas inlet for providing gas into the plasma chamber;

a gas exhaust for exhausting gas from the plasma chamber;

a thin electrostatic shield positioned between at least a portion of the inductor and at least a portion of the plasma chamber such that the thin electrostatic shield reduces capacitive coupling from the inductor to the plasma relative to a level of capacitive coupling that would be present in the absence of the thin electrostatic shield;

wherein the thin electrostatic shield is sufficiently thin such that inductively coupled power from the inductor is coupled through the thin electrostatic shield to sustain the plasma; and

wherein the substrate is positioned such that the substrate is exposed to the at least one plasma product for processing,

wherein the electrostatic shield is deposited on at least a portion of the inductor.

40. A method of processing a semiconductor substrate in a plasma reactor comprising:

supplying gas to a reaction chamber;

shielding the gas in the reaction chamber with an electrostatic shield, the electrostatic shield comprising a highly conductive material and having at least a portion that is sufficiently thin to allow the passage of inductively coupled power through the electrostatic shield into the gas in the reaction chamber;

inductively coupling power into the gas in the reaction chamber through said electrostatic shield;

forming at least one plasma product for processing said substrate; and

exposing said substrate to said at least one plasma product.

41. The method of claim 40 further comprising:

generating an inductive electric field;

wherein the electrostatic shield is configured such that there is a continuous path along the shield in the direction of the inductive electric field; and

a portion of the shield along the continuous path is sufficiently thin to prevent a countervailing current from being formed which would substantially reduce inductive coupling from the inductor to the plasma.

42. The method of claim 40 wherein the electrostatic shield comprises aluminum.

43. The method of claim 40 wherein the electrostatic shield comprises titanium nitride.

44. The method of claim 40 wherein the electrostatic shield comprises a thin film.

45. The method of claim 40 wherein the electrostatic shield comprises a thin film deposited on an inductor.

46. The method of claim 40 wherein the electrostatic shield comprises a thin film deposited on the reactor chamber.

47. The method of claim 40 wherein the electrostatic shield has a thickness of less than about 250 microns.

48. The method of claim 40 wherein the electrostatic shield has a thickness of less than about 100 microns.

49. The method of claim 40 wherein the electrostatic shield has a thickness of less than about 5 microns.

50. A method of processing a semiconductor substrate in a plasma reactor comprising the steps of:

supplying gas to a reaction chamber;

shielding the gas in the reaction chamber with an electrostatic shield, the electrostatic shield having at least a portion with a thickness of less than about 250 microns to allow the passage of inductively coupled power through the electrostatic shield into the gas in the reaction chamber;

inductively coupling power into the gas in the reaction chamber through said electrostatic shield;

forming at least one plasma product for processing said substrate; and

exposing said substrate to said at least one plasma product.

51. The method of claim 50 further comprising:

generating an inductive electric field;

wherein the electrostatic shield is configured such that there is a continuous path along the shield in the direction of the inductive electric field; and

a portion of the shield along the continuous path is sufficiently thin to prevent a countervailing current from being formed which would substantially reduce inductive coupling from the inductor to the plasma.

52. The method of claim 50 wherein the electrostatic shield comprises a highly conductive material.

53. The method of claim 50 wherein the electrostatic shield comprises a material which would substantially block inductive coupling at thicknesses greater than 250 microns.

54. The method of claim 50 wherein the electrostatic shield comprises aluminum.

55. The method of claim 50 wherein the electrostatic shield comprises titanium nitride.

56. The method of claim 50 wherein the electrostatic shield comprises a thin film.

57. The method of claim 50 wherein the electrostatic shield comprises a thin film deposited on an inductor.

58. The method of claim 50 wherein the electrostatic shield comprises a thin film deposited on the reactor chamber.

59. The method of claim 50 wherein the electrostatic shield has a thickness of less than about 100 microns.

60. The method of claim 50 wherein the electrostatic shield has a thickness of less than about 5 microns.