Apparatus for improving the performance of a temperature-sensitive etch process

• US 6,056,850 A
• Filed: 01/09/1998
• Issued: 05/02/2000
• Est. Priority Date: 07/12/1996
• Status: Expired due to Term

• Current Assignee: Round Rock Research LLC
• Original Assignee: Micron Technology, Inc.
• Inventors: Howard, Bradley J., Blalock, Guy T.
• Primary Examiner(s): Beck, Shrive
• Assistant Examiner(s): Hassanzadeh, Parviz
• Application Number:
  US09/005,409
• Time in Patent Office: 844 Days
• Field of Search: 156/345, 118/723 E, 118/715, 118/723 I, 118/723 MN, 118/722
• US Class Current: 156/345.27
• CPC Class Codes: H01L 21/31116 by dry-etching

Abstract

The temperature of a dry etch process of a semiconductor substrate in a plasma etch chamber is controlled to maintain selectivity while also providing a high etch rate by introducing one or more cooling steps into the etch process. To maintain selectivity of the etch as well as a high rate of etch, the formation of plasma is terminated prior to exceeding a predetermined maximum temperature at at least one selected location in the chamber. The temperature at the selected location is reduced prior to the resumption of plasma flow and etching. The plasma etch is then continued, and may optionally be terminated again to permit cooling, as needed, until etching has been completed.

Claims

1. An apparatus for performing gas plasma etching of a semiconductor substrate comprising:

a) an enclosed chamber having upper, lower, and side walls for containing said semiconductor substrate, said chamber including a vacuum pump for evacuating said chamber;

b) a gas distributor in said chamber;

c) a spaced apart radio frequency electrode and grounded electrode in said chamber for generating gas plasma;

d) at least one temperature probe comprising a fiber optic probe positioned in said chamber for monitoring the temperature at a selected location in said chamber; and

e) a controller communicating with said radio frequency electrode and said at least one temperature probe, said controller adapted to terminate the generation of gas plasma when a predetermined temperature is reached at said selected location.

2. An apparatus as claimed in claim 1 in which said controller is adapted to resume the generation of said gas plasma when said temperature of said selected location is below said predetermined temperature.

3. An apparatus as claimed in claim 1 in which said selected location is an upper, lower, or sidewall of said chamber.

4. An apparatus as claimed in claim 1 in which said selected location is said semiconductor substrate.

5. An apparatus as claimed in claim 1 in which said selected location is an electrode within said chamber.

6. An apparatus as claimed in claim 1 in which said temperature probe is positioned in one of said walls of said chamber.

7. An apparatus as claimed in claim 1 in which said temperature probe is positioned in or adjacent to said radio frequency electrode.

8. An apparatus as claimed in claim 1 in which said temperature probe is positioned adjacent to said semiconductor substrate.

9. An apparatus as claimed in claim 1 further including a device for holding said semiconductor substrate in said chamber, said semiconductor substrate including an underside, and a source of coolant supplied to said underside of said semiconductor substrate.

10. An apparatus for performing gas plasma etching of a semiconductor substrate comprising:

a) an enclosed chamber having upper, lower, and side walls for containing said semiconductor substrate, said chamber including a vacuum pump for evacuating said chamber;

b) a gas distributor in said chamber;

c) a spaced apart radio frequency electrode and grounded electrode in said chamber for generating gas plasma;

d) at least one temperature probe comprising a fiber oplic probe positioned in said chamber for monitoring the temperature at a selected location in said chamber;

e) a source of coolant; and

e) a controller communicating with said radio frequency electrode and said at least one temperature probe, said controller adapted to supply said coolant to reduce the temperature at said selected location in said chamber.

11. An apparatus as claimed in claim 10 in which said selected location is an upper, lower, or sidewall of said chamber.

12. An apparatus as claimed in claim 10 in which said selected location is said semiconductor substrate.

13. An apparatus as claimed in claim 10 in which said selected location is an electrode within said chamber.

14. An apparatus as claimed in claim 10 in which said temperature probe is positioned in one of said walls of said chamber.

15. An apparatus as claimed in claim 10 in which said temperature probe is positioned in or adjacent to said radio frequency electrode.

16. An apparatus as claimed in claim 10 in which said temperature probe is positioned adjacent to said semiconductor substrate.

17. An apparatus as claimed in claim 10 further including a device for holding said semiconductor substrate in said chamber, said semiconductor substrate including an underside, and said source of coolant supplied to said underside of said semiconductor substrate.

18. An apparatus for performing gas plasma etching of a semiconductor substrate comprising:

a) an enclosed chamber having upper, lower, and side walls for containing said semiconductor substrate, said chamber including a vacuum pump for evacuating said chamber;

b) a gas distributor in said chamber;

c) a spaced apart radio frequency electrode and grounded electrode in said chamber for generating gas plasma; and

d) a controller communicating with said radio frequency electrode, said controller programmed to terminate the generation of gas plasma at predetermined intervals to permit said chamber walls to cool prior to the resumption of etching.

19. An apparatus for performing gas plasma etching of a semiconductor substrate comprising:

a) an enclosed chamber having upper, lower, and side walls for containing said semiconductor substrate, said chamber including a vacuum pump for evacuating said chamber;

b) a gas distributor in said chamber;

c) a spaced apart radio frequency electrode and grounded electrode in said chamber for generating gas plasma; and

d) a controller communicating with said radio frequency electrode, said controller programmed to increase the flow of gas to said chamber at predetermined intervals to cool said walls of said chamber prior to the resumption of etching.