Apparatus for improving the performance of a temperature-sensitive etch process
First Claim
1. An apparatus for performing gas plasma etching of a semiconductor substrate comprising:
- a) an enclosed chamber having upper, lower, and side walls for containing said semiconductor substrate, said chamber including a vacuum pump for evacuating said chamber;
b) a gas distributor in said chamber;
c) a spaced apart radio frequency electrode and grounded electrode in said chamber for generating gas plasma;
d) at least one temperature probe comprising a fiber optic probe positioned in said chamber for monitoring the temperature at a selected location in said chamber; and
e) a controller communicating with said radio frequency electrode and said at least one temperature probe, said controller adapted to terminate the generation of gas plasma when a predetermined temperature is reached at said selected location.
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Accused Products
Abstract
The temperature of a dry etch process of a semiconductor substrate in a plasma etch chamber is controlled to maintain selectivity while also providing a high etch rate by introducing one or more cooling steps into the etch process. To maintain selectivity of the etch as well as a high rate of etch, the formation of plasma is terminated prior to exceeding a predetermined maximum temperature at at least one selected location in the chamber. The temperature at the selected location is reduced prior to the resumption of plasma flow and etching. The plasma etch is then continued, and may optionally be terminated again to permit cooling, as needed, until etching has been completed.
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Citations
19 Claims
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1. An apparatus for performing gas plasma etching of a semiconductor substrate comprising:
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a) an enclosed chamber having upper, lower, and side walls for containing said semiconductor substrate, said chamber including a vacuum pump for evacuating said chamber; b) a gas distributor in said chamber; c) a spaced apart radio frequency electrode and grounded electrode in said chamber for generating gas plasma; d) at least one temperature probe comprising a fiber optic probe positioned in said chamber for monitoring the temperature at a selected location in said chamber; and e) a controller communicating with said radio frequency electrode and said at least one temperature probe, said controller adapted to terminate the generation of gas plasma when a predetermined temperature is reached at said selected location. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. An apparatus for performing gas plasma etching of a semiconductor substrate comprising:
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a) an enclosed chamber having upper, lower, and side walls for containing said semiconductor substrate, said chamber including a vacuum pump for evacuating said chamber; b) a gas distributor in said chamber; c) a spaced apart radio frequency electrode and grounded electrode in said chamber for generating gas plasma; d) at least one temperature probe comprising a fiber oplic probe positioned in said chamber for monitoring the temperature at a selected location in said chamber; e) a source of coolant; and e) a controller communicating with said radio frequency electrode and said at least one temperature probe, said controller adapted to supply said coolant to reduce the temperature at said selected location in said chamber. - View Dependent Claims (11, 12, 13, 14, 15, 16, 17)
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18. An apparatus for performing gas plasma etching of a semiconductor substrate comprising:
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a) an enclosed chamber having upper, lower, and side walls for containing said semiconductor substrate, said chamber including a vacuum pump for evacuating said chamber; b) a gas distributor in said chamber; c) a spaced apart radio frequency electrode and grounded electrode in said chamber for generating gas plasma; and d) a controller communicating with said radio frequency electrode, said controller programmed to terminate the generation of gas plasma at predetermined intervals to permit said chamber walls to cool prior to the resumption of etching.
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19. An apparatus for performing gas plasma etching of a semiconductor substrate comprising:
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a) an enclosed chamber having upper, lower, and side walls for containing said semiconductor substrate, said chamber including a vacuum pump for evacuating said chamber; b) a gas distributor in said chamber; c) a spaced apart radio frequency electrode and grounded electrode in said chamber for generating gas plasma; and d) a controller communicating with said radio frequency electrode, said controller programmed to increase the flow of gas to said chamber at predetermined intervals to cool said walls of said chamber prior to the resumption of etching.
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Specification