Method for manufacturing an inductor with resonant frequency and Q value increased in semiconductor process
First Claim
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1. A method for manufacturing an inductor with resonant frequency and Q value increased in semiconductor process, comprising:
- preparing a substrate on which a plurality of field oxide layers are already formed;
forming a first dielectric layer on said substrate and said plurality of field oxide layers;
performing a CMP process on said first dielectric layer;
forming a plurality of trenches in said first dielectric layer and said substrate between said field oxide layers;
forming a stuffing layer on said first dielectric layer and in said plurality of trenches;
performing a CMP process on said stuffing layer to remove part of said stuffing layer over said first dielectric layer, that is, remaining stuffing layers are still located only in said plurality of trenches;
forming a second dielectric layer on said first dielectric layer and said remaining stuffing layers;
forming a plurality of small trenches corresponding to said plurality of trenches on said second dielectric layer;
removing said remaining stuffing layers in said plurality of trenches;
forming a third dielectric layer with high viscosity on said second dielectric layer, wherein said third dielectric layer cannot flow into said plurality of trenches because of the high viscosity of said third dielectric layer and tiny sizes of said plurality of small trenches; and
forming a spiral metal layer on said third dielectric layer just over said plurality of trenches.
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Abstract
A method for manufacturing an inductor with resonant frequency and Q value increased in semiconductor process can reduce substrate coupling effect, because (an) air layer(s) is/are formed just under a spiral metal layer which functions as an inductor. In addition, part of the substrate material still remains around the air layer(s), which can be used as a support for the spiral metal layer. Therefore, a problem causing the above-mentioned spiral metal layer to collapse will never occur.
67 Citations
22 Claims
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1. A method for manufacturing an inductor with resonant frequency and Q value increased in semiconductor process, comprising:
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preparing a substrate on which a plurality of field oxide layers are already formed; forming a first dielectric layer on said substrate and said plurality of field oxide layers; performing a CMP process on said first dielectric layer; forming a plurality of trenches in said first dielectric layer and said substrate between said field oxide layers; forming a stuffing layer on said first dielectric layer and in said plurality of trenches; performing a CMP process on said stuffing layer to remove part of said stuffing layer over said first dielectric layer, that is, remaining stuffing layers are still located only in said plurality of trenches; forming a second dielectric layer on said first dielectric layer and said remaining stuffing layers; forming a plurality of small trenches corresponding to said plurality of trenches on said second dielectric layer; removing said remaining stuffing layers in said plurality of trenches; forming a third dielectric layer with high viscosity on said second dielectric layer, wherein said third dielectric layer cannot flow into said plurality of trenches because of the high viscosity of said third dielectric layer and tiny sizes of said plurality of small trenches; and forming a spiral metal layer on said third dielectric layer just over said plurality of trenches. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A method for manufacturing an inductor with resonant frequency and Q value increased in semiconductor process, comprising:
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preparing a substrate on which a plurality of field oxide layers are already formed; forming a first dielectric layer on said substrate and said plurality of field oxide layers; performing a CMP process on said first dielectric layer; forming a spiral trench in said first dielectric layer and said substrate between said field oxide layers; forming a stuffing layer on said first dielectric layer and in said spiral trench; performing a CMP process on said stuffing layer to remove part of said stuffing layer over said first dielectric layer, that is, a remaining stuffing layer is still located only in said spiral trench; forming a second dielectric layer on said first dielectric layer and said remaining stuffing layer; forming a small spiral trench corresponding to said spiral trench on said second dielectric layer; removing said remaining stuffing layer in said spiral trench; forming a third dielectric layer with high viscosity on said second dielectric layer, wherein said third dielectric layer cannot flow into said spiral trench because of the high viscosity of said third dielectric layer and tiny size of said small spiral trench; and forming a spiral metal layer on said third dielectric layer just over said spiral trench. - View Dependent Claims (15, 16, 17, 18, 19, 20, 21, 22)
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12. A method for manufacturing an inductor with resonant frequency and Q value increased in semiconductor process as claimed in 11, further comprising:
forming a fourth dielectric layer on said third dielectric layer. - View Dependent Claims (13, 14)
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Current AssigneeWinbond Electronics Corporation
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Original AssigneeWinbond Electronics Corporation
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InventorsChen, Tzong-Liang, Chen, Kuan-Ting, Chen, Chih-Ming, Yung, Hao-Chien
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Primary Examiner(s)Whitehead, Jr., Carl
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Assistant Examiner(s)Davis, Jamie L.
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Application NumberUS09/034,947Time in Patent Office789 DaysField of Search438/381, 438/393, 438/619, 438/238, 438/411, 438/421, 438/FOR 430, 438/FOR 438, 257/531, 257/528, 257/532, 336/200, 336/232, 336/165, 336/178US Class Current438/381CPC Class CodesH01L 23/5227 Inductive arrangements or e...H01L 27/08 including only semiconducto...H01L 28/10 InductorsH01L 2924/00 Indexing scheme for arrange...H01L 2924/0002 Not covered by any one of g...
