Method for fabricating semiconductor device and method for controlling environment inside reaction chamber of dry etching apparatus
First Claim
Patent Images
1. A method for fabricating a semiconductor device, comprising the steps of:
- forming an oxide film on a substrate having a silicon region at least on the surface thereof;
defining a resist pattern on the oxide film;
placing the substrate on an electrode provided inside a reaction chamber of a plasma etching apparatus, and etching the oxide film by using plasma generated from a gas including a fluorocarbon gas, with a bias voltage applied to the substrate; and
removing fluorine from the reaction chamber by generating oxygen plasma inside the reaction chamber with substantially no bias voltage applied to the substrate.
6 Assignments
0 Petitions
Accused Products
Abstract
A method for fabricating a semiconductor device according to the present invention includes the steps of: forming an oxide film on a substrate having a silicon region at least on the surface thereof; defining a resist pattern on the oxide film; placing the substrate on an electrode provided inside a reaction chamber of a plasma etching apparatus, and etching the oxide film by using plasma generated from a gas including a fluorocarbon gas with a bias voltage applied to the substrate; and removing fluorine from the reaction chamber by generating oxygen plasma inside the reaction chamber with substantially no bias voltage applied to the substrate.
50 Citations
35 Claims
-
1. A method for fabricating a semiconductor device, comprising the steps of:
-
forming an oxide film on a substrate having a silicon region at least on the surface thereof; defining a resist pattern on the oxide film; placing the substrate on an electrode provided inside a reaction chamber of a plasma etching apparatus, and etching the oxide film by using plasma generated from a gas including a fluorocarbon gas, with a bias voltage applied to the substrate; and removing fluorine from the reaction chamber by generating oxygen plasma inside the reaction chamber with substantially no bias voltage applied to the substrate. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18)
-
-
19. A method for fabricating a semiconductor device comprising the steps of:
-
forming a semiconductor element on a substrate; depositing a silicon dioxide film on the substrate; defining a photoresist pattern on the silicon dioxide film; etching the silicon dioxide film by using gaseous plasma inside a reaction chamber of an etching apparatus, the ratio of fluorine to carbon contained in the gaseous plasma being two or less; and controlling an environment inside the reaction chamber by oxidizing a polymer film formed on an inner wall of the reaction chamber. - View Dependent Claims (20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30, 31, 32, 33, 34)
-
-
35. A method for controlling an environment inside a reaction chamber of a dry etching apparatus, the apparatus being used for performing the step of dry-etching a silicon dioxide film inside the reaction chamber by using gaseous plasma in which the ratio of fluorine to carbon is 2 or less, wherein oxygen plasma processing is performed on a polymer film formed on an inner wall of the reaction chamber while the step of dry etching is not performed.
Specification