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Method for fabricating semiconductor device and method for controlling environment inside reaction chamber of dry etching apparatus

  • US 6,057,247 A
  • Filed: 10/28/1998
  • Issued: 05/02/2000
  • Est. Priority Date: 10/29/1997
  • Status: Expired due to Term
First Claim
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1. A method for fabricating a semiconductor device, comprising the steps of:

  • forming an oxide film on a substrate having a silicon region at least on the surface thereof;

    defining a resist pattern on the oxide film;

    placing the substrate on an electrode provided inside a reaction chamber of a plasma etching apparatus, and etching the oxide film by using plasma generated from a gas including a fluorocarbon gas, with a bias voltage applied to the substrate; and

    removing fluorine from the reaction chamber by generating oxygen plasma inside the reaction chamber with substantially no bias voltage applied to the substrate.

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