Optical semiconductor element

• US 6,057,561 A
• Filed: 02/27/1998
• Issued: 05/02/2000
• Est. Priority Date: 03/07/1997
• Status: Expired due to Term

• Current Assignee: Japan Science And Technology Corpration
• Original Assignee: Japan Science And Technology Corpration
• Inventors: Yasuda, Takashi, Segawa, Yusaburo, Ohtomo, Akira, Kawasaki, Masashi, Koinuma, Hideomi
• Primary Examiner(s): MINTEL, WILLIAM A
• Application Number:
  US09/032,025
• Time in Patent Office: 795 Days
• Field of Search: 257/94, 257/96, 257/97, 257/103, 257/98, 438/34, 438/22, 372/45, 372/46
• US Class Current: 257/94
• CPC Class Codes: H01L 33/0087 with a substrate not being a II-VI compound
• CPC Class Codes: H01L 33/28 containing only elements of Group II and Group VI of the Periodic Table
• CPC Class Codes: H01L 33/50 Wavelength conversion elements
• CPC Class Codes: H01S 2304/02 MBE
• CPC Class Codes: H01S 5/0213 Sapphire, quartz or diamond based substrates
• CPC Class Codes: H01S 5/041 Optical pumping
• CPC Class Codes: H01S 5/32308 emitting light at a wavelength less than 900 nm
• CPC Class Codes: H01S 5/327 in AIIBVI compounds, e.g. ZnCdSe-laser

Abstract

A ZnO thin film is fabricated on the c-surface of a sapphire substrate through use of a laser molecular beam epitaxy (MBE) method-which is effective for epitaxial growth of an oxide thin film through control at an atomic level. The thus-formed ZnO thin film has a considerably high crystallinity; the half width of an X-ray rocking curve was 0.06°. The thin film is of an n-type and has a carrier density of 4×10¹⁷ /cm³. The thin film fabricated in a state in which oxygen partial pressure is held constant at 10^-6 Torr has a structure in which hexagon-shaped nanocrystals of uniform size are close-packed, reflecting the crystal behavior of a wurtzite type. Since in each nanocrystal there is observed a spiral structure formed by steps of a unit cell height (0.5 nm), the nanocrystals are considered to grow in a thermodynamically equilibrated state. The lateral size of the nanocrystal can be controlled within the range of approximately 50 to 250 nm. A II-oxide optical semiconductor element utilizes a zinc oxide thin film containing magnesium or cadmium in a solid-solution state. Through addition of magnesium or cadmium, the band gap of zinc oxide can be controlled within the range of 3 to 4 eV.

Claims

1. An optical semiconductor element comprising a thin film containing ZnO, said thin film having grain boundaries which are barriers providing exciton confinement and laser resonator mirrors, and said thin film emitting light in the UV range.

2. An optical semiconductor element according to claim 1, wherein the thin film is a thin film of hexagonal ZnO nanocrystals.

3. An optical semiconductor element according to claim 2, wherein the thin film of hexagonal ZnO nanocrystals is formed by use of a laser molecular beam epitaxy (MBE) method.

4. An optical semiconductor element according to claim 1, further comprising a fluorescence layer that is excited by ultraviolet or blue light emitted from said thin film to generate visible light usable for color display or illumination.

10. An optical semiconductor element according to claim 1 further comprising a substrate, said thin film being formed on said substrate by laser molecular beam epitaxy.

11. An optical semiconductor element according to claim 10 wherein said substrate is a sapphire crystal and said thin film is formed on a C-surface of said sapphire crystal.

12. An optical semiconductor element according to claim 1 additionally comprising a crystalline substrate having a surface supporting said thin film and wherein said grain boundaries are perpendicular to the surface of the substrate and are formed, by lattice mismatch between said Zno and said substrate, at a recurrent distance corresponding to a common multiple of lattice spacing of said substrate and lattice spacing of said Zno.

13. An optical semiconductor element according to claim 12 wherein said thin film is composed of hexagonal ZnO nanocrystals.

14. An optical semiconductor element according to claim 13 wherein said Zno nanocrystals have a lateral dimension in the range of 40-60 nm.

15. An optical semiconductor according to claim 13 which emits said light in the UV range at room temperature.

5. A II-oxide optical semiconductor element which comprises a zinc oxide thin film containing magnesium in a solid solution or mixed phase state, said magnesium raising the band gap of said zinc oxide and said thin film having grain boundaries which are barriers providing exciton confinement and laser resonator mirrors, and said thin film emitting light in the UV range.

7. A II-oxide optical semiconductor element according to claim 5, further comprising a fluorescence layer that is excited by ultraviolet or blue light emitted from the light emitting layer to generate visible light, thereby enabling color display or illumination.

8. A II-oxide optical semiconductor element according to claim 5, which has a double heterostructure in which the zinc oxide thin film serving as a light emitting layer is sandwiched between zinc oxide thin films each containing magnesium in a solid solution state and serving as a carrier confinement and cladding layer.

16. A II-oxide optical semiconductor element according to claim 5, further comprising a fluorescence layer that is excited by ultraviolet or blue light emitted from the light emitting layer to generate visible light, thereby enabling color display or illumination.

17. An optical semiconductor element according to claim 5 additionally comprising a crystalline substrate having a surface supporting said thin film, wherein said grain boundaries are perpendicular to the surface of the substrate and are formed, by lattice mismatch between said ZnO and said substrate, at a recurrent distance corresponding to a common multiple of lattice spacing of said substrate and lattice spacing of said ZnO and wherein said thin film is composed of hexagonal ZnO nanocrystals containing said magnesium.

18. An optical semiconductor element according to claim 17 wherein said ZnO nanocrystals have a lateral dimension in the range of 40-60 nm.

6. A II-oxide optical semiconductor element which comprises a zinc oxide film containing cadmium in a solid solution or mixed phase state. said cadmium lowering the band gap of said zinc oxide and having grain boundaries which are barriers providing exciton confinement and laser resonator mirrors, and said thin film emitting light in the UV range.

19. An optical semiconductor element according to claim 6 additionally comprising a crystalline substrate having a surface supporting said thin film, wherein said grain boundaries are perpendicular to the surface of the substrate and are formed, by lattice mismatch between said ZnO and said substrate, at a recurrent distance corresponding to a common multiple of lattice spacing of said substrate and lattice spacing of said ZnO and wherein said thin film is composed of hexagonal ZnO nanocrystals containing said cadmium.

20. An optical semiconductor element according to claim 19 wherein said ZnO nanocrystals have a lateral dimension in the range of 40-60 nm.

9. An optical semiconductor element comprising a ZnO light emitting layer, a p-type zinc oxide layer, an electrode and a thin film of AlCuO₂ as an intermediate layer disposed between the p-type zinc oxide layer and the electrode.

21. An optical semiconductor element according to claim 9 additionally comprising a crystalline substrate having a surface supporting said thin film and wherein said ZnO light emitting layer has grain boundaries perpendicular to the surface of the substrate which are formed, by lattice mismatch between said ZnO and said substrate, at a recurrent distance corresponding to a common multiple of lattice spacing of said substrate and lattice spacing of said ZnO and wherein said thin film is composed of hexagonal ZnO nanocrystals.

22. An optical semiconductor element according to claim 21 wherein said ZnO nanocrystals have a lateral dimension in the range of 40-60 nm.