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Semiconductor integrated circuit device with MOS transistor and MOS capacitor and method for manufacturing the same

  • US 6,057,572 A
  • Filed: 06/11/1998
  • Issued: 05/02/2000
  • Est. Priority Date: 06/14/1997
  • Status: Expired due to Fees
First Claim
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1. A semiconductor integrated circuit device, comprising:

  • a semiconductor substrate;

    a MOS type field effect transistor having a first silicon oxide film formed on said semiconductor substrate as a gate insulating film; and

    a capacitor having a second silicon oxide film on said semiconductor substrate as a dielectric film, a first electrode comprising a portion of said semiconductor substrate and a second electrode on said second silicon oxide film;

    wherein said second silicon oxide film is thicker than said first silicon oxide film.

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