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Inverse-T tungsten gate apparatus

  • US 6,057,576 A
  • Filed: 09/24/1998
  • Issued: 05/02/2000
  • Est. Priority Date: 05/20/1996
  • Status: Expired due to Term
First Claim
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1. A semiconductor device, said semiconductor device comprising:

  • a semiconductor substrate having an overlying gate insulating layer;

    a first silicided layer overlying said gate insulating layer wherein said first silicided layer is substantially non-reactive to said gate insulating layer; and

    a gate electrode overlying said first silicided layer, said first silicided layer extending laterally from said gate electrode.

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