Semiconductor acceleration sensor

• US 6,057,585 A
• Filed: 03/12/1998
• Issued: 05/02/2000
• Est. Priority Date: 03/12/1998
• Status: Expired due to Fees

• Current Assignee: Seiko Instruments Incorporated (Seiko Group)
• Original Assignee: Seiko Instruments Incorporated (Seiko Group)
• Inventors: Shinogi, Masataka, Kato, Kenji, Saitoh, Yutaka
• Primary Examiner(s): Meier, Stephen D.
• Application Number:
  US09/041,547
• Time in Patent Office: 782 Days
• Field of Search: 257/419, 257/415
• US Class Current: 257/419
• CPC Class Codes: G01P 15/0802 Details
• CPC Class Codes: G01P 15/123 by piezo-resistive elements, e.g. semiconductor strain gauges
• CPC Class Codes: G01P 15/18 in two or more dimensions
• CPC Class Codes: G01P 2015/0828 the mass being of the paddle type being suspended at one of its longitudinal ends

Abstract

A semiconductor acceleration sensor comprises a base having a first surface for receiving an acceleration force and a second surface disposed generally perpendicular to the first surface. A first detector is disposed on the second surface of the base for detecting an acceleration force in a horizontal direction of the base. A second detector is disposed on the second surface of the base for detecting an acceleration force in a vertical direction of the base. A support member is connected to one end of the base for supporting and fixing the base.

Claims

1. A method for detecting and processing a specular image density level X₁ and a highlight image density level X₂ in an illuminated scene comprising:

exposing a photo-sensitive means by a luminous image from said scene, thereby generating a plurality of digital image signals, each said digital image signal representing a density of a portion of said luminous image;

establishing a cumulative histogram for the image density levels of said digital image signals;

providing a reference specular cumulative frequency Y₁ ;

2. A semiconductor acceleration sensor as claimed in claim 1;

further comprising a weight disposed on an end portion of the base.

3. A semiconductor acceleration sensor as claimed in claim 2;

wherein the weight comprises a bump.

4. A semiconductor acceleration sensor as claimed in claim 1;

wherein the detecting portion comprises a plurality of diffused resistors.

5. A semiconductor acceleration sensor as claimed in claim 1;

wherein the opposite surfaces of the base extend in a thickness direction of the base.

6. A semiconductor acceleration sensor comprising:

a base having a first surface for receiving an acceleration force and a second surface disposed generally perpendicular to the first surface;

first detecting means disposed on the second surface of the base for detecting an acceleration force in a horizontal direction;

second detecting means disposed on the second surface of the base for detecting an acceleration force in a vertical direction; and

a support member for supporting and fixing one end of the base.

7. A semiconductor acceleration sensor as claimed in claim 6;

further comprising a weight disposed on an end portion of the base.

8. A semiconductor acceleration sensor as claimed in claim 7;

wherein the weight comprises a bump.

9. A semiconductor acceleration sensor as claimed in claim 6;

wherein each of the first detecting means and the second detecting means comprises at least one diffused resistor.

10. A semiconductor acceleration sensor as claimed in claim 6;

wherein the second surface of the base extends in a thickness direction of the base.

11. A semiconductor acceleration sensor comprising:

a base having a first surface and a second surface disposed generally perpendicular to the first surface;

a detecting section disposed on the second surface of the base for detecting an acceleration force in a horizontal direction and detecting an acceleration force in a vertical direction; and

a support member connected to a portion of the first surface of the base for supporting and fixing one end of the base.

12. A semiconductor acceleration sensor as claimed in claim 11;

wherein the base has a third surface for receiving an acceleration force and disposed generally perpendicular to the second surface.

13. A semiconductor acceleration sensor comprising:

a base having a first surface and a second surface for receiving an acceleration force and disposed generally perpendicular to the first surface;

a detecting section disposed on the second surface of the base, the detecting section having a first detector for detecting an acceleration force in a horizontal direction and a second detector for detecting an acceleration in a vertical direction; and

a support member connected to a portion of the first surface of the base for supporting and fixing one end of the base.

14. A semiconductor acceleration sensor as claimed in claim 13;

wherein the second detector comprises a half-bridge circuit having a pair of reference diffused resistors and a pair of detecting diffused resistors.

15. A semiconductor acceleration sensor comprising:

a base having first surfaces for receiving an acceleration force an a second surface disposed generally perpendicular to the first surfaces;

a detecting section disposed on the second surface of the base, the detecting section having a first detector for detecting an acceleration in a horizontal direction and a second detector for detecting an acceleration in a vertical direction; and

a support member connected to a portion of the first surfaces for supporting and fixing one end of the base.

16. A semiconductor acceleration sensor comprising:

a semiconductor substrate having a first surface for receiving an acceleration force and a pair of second opposite surfaces disposed generally perpendicular to the first surface, each of the second opposite surfaces having a detecting section for detecting a variation of a physical quantity in two axial directions of the semiconductor substrate due to the acceleration force applied to the first surface; and

a support for supporting and fixing the semiconductor substrate.

17. A semiconductor acceleration sensor as claimed in claim 16;

wherein the detecting section comprises a plurality of diffused resistors.

18. A semiconductor acceleration sensor as claimed in claim 17;

wherein the detecting section comprises a plurality of diffused resistors for detecting the acceleration force in a horizontal direction and a plurality of diffused resistors for detecting the acceleration force in a vertical direction.