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Vapor deposition apparatus and method for forming thin film

  • US 6,059,885 A
  • Filed: 12/16/1997
  • Issued: 05/09/2000
  • Est. Priority Date: 12/19/1996
  • Status: Expired due to Term
First Claim
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1. A vapor deposition apparatus comprising:

  • a hollow reactor having a gas supply port at a top portion thereof and an exhaust port at a bottom portion thereof, said gas supply port being adapted to supply reaction gas into said reactor to form a thin film on a surface of a wafer substrate;

    a rotational substrate holder positioned inside said reactor, said substrate holder being adapted to seat a wafer substrate; and

    a straightening vane having a central portion and an outer portion extending radially outwardly from said central portion,wherein said central portion is defined by an area at least as large as an area of said substrate holder and concentric with said substrate holder, andwherein said central portion has first gas holes and said outer portion has second gas holes, the total area of the openings of said second gas holes being larger than that of the first gas holes.

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