Photoelectrochemical device containing a quantum confined silicon particle

• US 6,060,026 A
• Filed: 07/31/1997
• Issued: 05/09/2000
• Est. Priority Date: 07/31/1997
• Status: Expired due to Term

• Current Assignee: Starfire Electronic Development And Marketing, Ltd.
• Original Assignee: Starfire Electronic Development and Marketing Incorporated
• Inventors: Goldstein, Avery N.
• Primary Examiner(s): Gorgos, Kathryn L.
• Assistant Examiner(s): Nicolas, Wesley A.
• Application Number:
  US08/910,595
• Time in Patent Office: 1,013 Days
• Field of Search: 422/186, 422/186.3, 204/157.5, 204/157.52, 204/157.15
• US Class Current: 422/186
• CPC Class Codes: B01D 53/885 Devices in general for catalytic purification of waste gases
• CPC Class Codes: B01J 19/122 Incoherent waves gamma-radiation B01J19/082
• CPC Class Codes: C01B 13/0207 Water
• CPC Class Codes: C01B 17/66 Dithionites or hydrosulfites (S2O42-)
• CPC Class Codes: C01B 3/042 Decomposition of water
• CPC Class Codes: C01B 3/26 using catalysts
• CPC Class Codes: C01D 5/00 Sulfates or sulfites of sodium, potassium or alkali metals in general sulfites in general C01B17/62
• CPC Class Codes: Y02E 60/36 Hydrogen production from non-carbon containing sources, e.g. by water electrolysis
• CPC Class Codes: Y02P 20/133 Renewable energy sources, e.g. sunlight

Abstract

A method for reacting a molecule using light as an energy source is described which comprises exposing the molecule to a catalyst material, the catalyst material in contact with an illuminated, quantum confined silicon domain. The silicon domain having a band gap greater than bulk silicon and sufficiently large for reacting the molecule. The method is particularly useful in decomposing water into hydrogen and oxygen, as well as photocatalytically degrading pollutants in a waste stream.

Claims

1. A photoelectrochemical device for driving an electrochemical reaction comprising:

a silicon domain having a quantum confined excitation energy band gap greater than that of bulk silicon and a size between 1 and 20 nanometers, wherein the excitation energy band gap is sufficient to induce reaction in the reactant; and

a first catalytic material in electrical contact with said silicon domain.

2. The photelectrochemical device of claim 1 further comprising:

a substrate onto which said domain is affixed.

3. The photelectrochemical device of claim 2 wherein said substrate is either an electrical insulator or a catalytic material.

4. The photoelectrochemical device of claim 3 further comprising:

a second catalytic material in contact with said silicon domain.

5. The photoelectrochemical device of claim 4 wherein said first or said second catalytic material is predominantly an electron acceptor and the other of said first or said second catalytic material is predominantly a hole acceptor.

6. The photoelectrochemical device of claim 5 wherein said first or said second catalytic material is selected from a group consisting of:

noble metals;

osmium;

iridium;

ruthenium;

the oxides and the chalcogenides thereof which have a band gap of less than 3 electron volts;

organometallics;

or titanates of the formula M₂ TiO_4+x, where M is cerium, chromium, iron, nickel, rhodium and tungsten, and x is 0 or 1, depending on whether M is +2 or +3 oxidation state, respectively.

7. The photoelectrochemical device of claim 3 further comprising a passivating coat on said domain so as to prevent contact between said domain and said reactant.

8. The photoelectrochemical device of claim 7 wherein said passivating coat is selected from a group consisting of:

hydrogen;

nitrogen;

fluorine;

small cross-section molecules or ions, where the molecules or ions have Pauling electronegativity values (x_A-xB) of greater than about 1.0;

or polymers.

9. The photoelectrochemical device of claim 3 wherein the silicon domain is less than 10 nanometers in diameter.

10. The photoelectrochemical device of claim 3 wherein the silicon domain is less than 6 nanometers in diameter.

11. The photoelectrochemical device of claim 3 wherein said silicon domain is doped to increase the charge carrier density.