Methods and arrangements for determining an endpoint for an in-situ local interconnect etching process

• US 6,060,328 A
• Filed: 09/05/1997
• Issued: 05/09/2000
• Est. Priority Date: 09/05/1997
• Status: Expired due to Term

• Current Assignee: GlobalFoundries, Inc.
• Original Assignee: Advanced Micro Devices, Inc.
• Inventors: Holbrook, Allison, Wang, Fei, En, William G.
• Primary Examiner(s): DUTTON, BRIAN KEITH
• Application Number:
  US08/924,569
• Time in Patent Office: 977 Days
• Field of Search: 438/9, 438/706, 216/60, 216/67, 356/357
• US Class Current: 438/9
• CPC Class Codes: B24B 37/013 Devices or means for detecting lapping completion
• CPC Class Codes: H01J 37/32935 Monitoring and controlling tubes by information coming from the object and/or discharge
• CPC Class Codes: H01J 37/32963 End-point detection
• CPC Class Codes: H01L 21/67253 Process monitoring, e.g. flow or thickness monitoring
• CPC Class Codes: H01L 22/26 Acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection, in-situ thickness measurement endpoint detection arrangements in CMP apparatus B24B37/013, in discharge apparatus H01J37/32

Abstract

An arrangement is provided for collecting, measuring and analyzing at least two specific wavelengths of optical emissions produced while etching a semiconductor wafer in a plasma chamber to determine an optimal endpoint for the etching process. The arrangement includes a sensor for gathering optical emissions, an interface for converting the intensity of optical emissions into corresponding electrical signals, and a controller for determining an optimal endpoint based on the corresponding electrical signals for the two specific wavelengths and other predetermined threshold data.

Claims

1. A method for determining at least one endpoint in an etching process, the method comprising:

measuring a first intensity of optical emissions having a first wavelength from a semiconductor wafer in a plasma chamber during a first etching process;

measuring a second intensity of optical emissions having a second wavelength from the semiconductor wafer in the plasma chamber during the first etching process; and

determining an endpoint for the first etching process based on at least one of the first and second measured intensities.

2. The method as recited in claim 1, further comprising:

starting a second etching process, in-situ, after the endpoint for the first etching process;

measuring the first intensity of optical emissions having the first wavelength during the second etching process;

measuring the second intensity of optical emissions having the second wavelength during the second etching process; and

determining an endpoint for the second etching process based on said at least one of the first and second measured intensities.

3. The method as recited in claim 1, wherein the first wavelength is selected from a set of wavelengths including approximately 386 nm and 520 nm wavelengths.

4. The method as recited in claim 1, wherein the second wavelength is approximately 439 nm.

5. The method as recited in claim 2, wherein measuring the first and second intensities of optical emissions includes:

sampling the optical emissions; and

converting the sampled optical emissions into a first intensity signal and a second intensity signal, wherein the first intensity signal is an electrical signal that is proportional to the first intensity and the second intensity signal is an electrical signal that is proportional to the second intensity.

6. The method as recited in claim 5, wherein determining an endpoint for the first etching process includes producing a ratio signal from the first and second intensity signals, and using the ratio signal to determine the endpoint for the first etching process.

7. The method as recited in claim 6, wherein the ratio signal is further used to determine the endpoint for the second etching process.

8. The method as recited in claim 7, wherein the ratio signal is proportional to the first intensity signal divided by the second intensity signal.

9. The method as recited in claim 8, wherein the endpoint for the first etching process is determined by comparing the ratio signal to at least one first etching process threshold level.

10. The method as recited in claim 9, wherein the endpoint for the second etching process is determined by comparing the ratio signal to at least one second etching process threshold level.

11. A method for controlling in-situ local interconnect etching of a semiconductor wafer, the method comprising:

etching a semiconductor wafer in a plasma chamber with a first etching process;

monitoring optical emissions from the plasma chamber while etching with the etching process, wherein the monitoring includes determining an intensity of at least two wavelengths of the optical emissions;

stopping the etching with the first etching process based on the intensity of at least one of the two wavelengths;

etching the semiconductor wafer in the plasma chamber with a second etching process; and

stopping the etching with the second etching process based on the intensity of at least one of the two wavelengths.

12. The method as recited in claim 11, wherein said at least one of the two wavelengths is selected from a set of wavelengths including approximately 386 nm and approximately 520 nm wavelengths.

13. The method as recited in claim 11, wherein a second one of the wavelengths is approximately 439 nm.

14. The method as recited in claim 11, wherein monitoring optical emissions includes sampling the optical emissions, and converting the sampled optical emissions into at least two electrical signals, wherein one electrical signal is representative of the intensity of a first one of the wavelengths and a second electrical signal is representative of a second one of the wavelengths.

15. The method as recited in claim 14, wherein stopping the etching of the first etching process includes producing a ratio signal from the two electrical signals, and using the ratio signal to determine an endpoint for the first etching process.

16. The method as recited in claim 15, wherein the ratio signal is further used to determine an endpoint for the second etching process in stopping the etching of the second etching process.

17. The method as recited in claim 16, wherein the ratio signal is proportional to the intensity of the optical emissions having a wavelength selected from a set of wavelengths including approximately 386 nm and approximately 520 nm wavelengths divided by the intensity of the second one of the wavelengths.

18. A method for determining at least one endpoint in an etching process, the method comprising:

measuring a first intensity of optical emissions having a first wavelength from a semiconductor wafer in a plasma chamber during a first etching process;

measuring a second intensity of optical emissions having a second wavelength from the semiconductor wafer in the plasma chamber during the first etching process; and

determining an endpoint for the first etching process based on a change in a ratio of the first and second measured intensities;

wherein the first wavelength is selected from a set of wavelengths including approximately 386 nm and 520 nm wavelengths, and wherein the second wavelength is approximately 439 nm.

19. A method for controlling in-situ local interconnect etching of a semiconductor wafer, the method comprising:

etching a semiconductor wafer in a plasma chamber with a first etching process;

monitoring optical emissions from the plasma chamber while etching with the etching process, said monitoring including determining an intensity of two wavelengths of the optical emissions;

stopping the etching with the first etching process based on a first change in a ratio of the intensities of the two wavelengths;

etching the semiconductor wafer in the plasma chamber with a second etching process; and

stopping the etching with the second etching process based on a second change in the ratio of the intensities of the two wavelengths.

20. A method as recited in claim 19, wherein at least one of the two wavelengths is selected from a set of wavelengths including approximately 386 nm and approximately 520 nm wavelengths.