Method for plasma treatment and apparatus for plasma treatment

• US 6,060,329 A
• Filed: 03/27/1998
• Issued: 05/09/2000
• Est. Priority Date: 03/27/1997
• Status: Expired due to Term

• Current Assignee: Fujitsu Semiconductor Limited (Fujitsu Limited)
• Original Assignee: Fujitsu Limited
• Inventors: Kamata, Takeshi, Arimoto, Hiroshi
• Primary Examiner(s): POWELL, WILLIAM A
• Application Number:
  US09/049,097
• Time in Patent Office: 774 Days
• Field of Search: 216/59, 216/61, 216/79, 438/9, 438/14, 438/17, 438/712, 438/726, 438/727, 156/345 MT, 156/345 P
• US Class Current: 438/9
• CPC Class Codes: H01J 37/32082 Radio frequency generated discharge H01J37/32357, H01J37/32366, H01J37/32394 and H01J37/32403 take precedence
• CPC Class Codes: H01J 37/32935 Monitoring and controlling tubes by information coming from the object and/or discharge

Abstract

A method for plasma treatment is disclosed which effects detection of the amount of particles in an plasma generation area measuring the electron density in the particles based on the numerical value of the electric density in the plasma generation area.

Claims

1. A method for plasma treatment, comprising the steps of:

generating a plasma any of (i) on and (ii) above a wafer in a chamber, measuring the electron density of said plasma; and

detecting the presence of particles suspended in said plasma in said chamber based on any of (i) the magnitude and (ii) the change of said electron density in said plasma.

2. A method for plasma treatment according to claim 1, wherein the presence of particles is judged when said electron density in said plasma is smaller than the standard value.

3. A method for plasma treatment according to claim 1, wherein any of(i) an AM modulated and (ii) a pulse modulated high-frequency electric power is applied to said plasma generation and an increase in any of (i) the number and (ii) the size of said particles is judged when the rate of attenuation of said electron density during a decline of said high-frequency power is smaller than a standard value.

4. A method for plasma treatment according to claim 1, wherein any of(i) an AM modulated and (ii) a pulse modulated high-frequency electric power is applied to said plasma generation and an increase in any of (i) the number and (ii) the size of said particles is judged when the rate of increase of said electron density during an increase of said high-frequency power is larger than the standard value.

5. A method for plasma treatment according to claim 1, wherein any of(i) an AM modulated and (ii) a pulse modulated high-frequency electric power is applied to said plasma and an increase in any of(i) the number and (ii) the size of said particles is judged when the fall time of said electron density during a decrease of said high-frequency power is longer than standard value.

6. A method for plasma treatment according to claim 1, wherein any of(i) an AM modulated and (ii) a pulse modulated high-frequency electric power is applied to said plasma generation and an increase in any of (i) the number and (ii) the size of said particles is judged when the rise time of said electron density during an increase of said high-frequency power is shorter than the standard value.

7. A method for plasma treatment according to claim 1, wherein a microwave is irradiated into said plasma and said electron density is determined based on the phase difference between said microwave which has passed through an area of said plasma and the microwave which has not passed therethrough.

8. A method for plasma treatment according to claim 7, wherein said electron density is determined by multiplying the frequency of said microwave prior to the passage through said area of plasma by said phase difference and further multiplying the resultant product by a pertinent constant.

9. A method for plasma treatment according to claim 1, wherein said chamber is cleaned at the time that the detected amount of said particles has surpassed a tolerable level.

10. A method for plasma treatment according to claim 1, wherein said change of electron density manifests itself in the difference in current response which occurs after a voltage pulse is applied to a microelectrode, said microelectrode being covered with an insulating material and disposed in any of (i) said plasma and (ii) the proximity thereof.

11. An method for plasma treatment according to claim 1, which further comprise etching gas apply device for introducing into said area of said plasma.

12. An method for plasma treatment according to claim 1, which further comprise reacting gas apply device for applying reaction gas to form film into said area of said plasma.

13. An apparatus for plasma treatment furnished with a device for retaining a semiconductor wafer subjected to an etching treatment or film forming treatment in a chamber and a high-frequency power for the generation of plasma into said chamber, comprising:

a microwave irradiating device for irradiating a microwave to an area of said plasma in said chamber;

a receiving device for receiving said microwave which has passed through said area of said plasma;

a phase difference detecting device for determining the phase difference between said microwave which has impinged on said receiving device and said microwave irradiated from said microwave irradiating device; and

an arithmetic device for computing any of(i) a magnitude of electron density in said area of said plasma and (ii) a ratio of change thereof based on said phase difference.

14. An apparatus for plasma treatment according to claim 13, which further comprises an analyzer for determining any of (i) a size and (ii) an amount of particles in accordance with said magnitude or said ratio change of electron density determined by said arithmetic device.

15. An apparatus for plasma treatment according to claim 13, which further comprises a power amount adjusting device for varying said magnitude of said high-frequency power during the detection of said phase difference by said phase difference detecting device.

16. An apparatus for plasma treatment according to claim 15, wherein said power amount adjusting device is any of (i) an AM modulating device and (ii) a pulse modulating device.

17. An apparatus for plasma treatment furnished with a device for retaining a semiconductor wafer subjected to an etching treatment or film forming treatment in a chamber and a high-frequency power for the generation of plasma into said chamber, comprising:

a microelectrode disposed in any of (i) an area for plasma generation and (ii) the proximity thereof and covered with an insulating membrane;

a power source for supplying a voltage pulse to said microelectrode;

current measuring device for measuring the electric current flowing between said power source and said microelectrode; and

an arithmetic device for computing any of (i) the magnitude of electron density in said area for plasma generation and (ii) the ratio of change thereof based on said current.