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Method of making a field effect transistor

  • US 6,060,338 A
  • Filed: 01/12/1999
  • Issued: 05/09/2000
  • Est. Priority Date: 01/10/1989
  • Status: Expired due to Fees
First Claim
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1. A method of fabricating a field effect transistor comprising:

  • forming a gate electrode on an electrically insulating substrate;

    forming an electrically insulating film on the substrate covering the gate electrode;

    forming source and drain electrodes on the electrically insulating film on opposite sides of the gate electrode; and

    forming a semiconducting film of a π

    -conjugated polymer having the chemical structure ##STR16## (where R1 and R2 are one of hydrogen, an alkyl group, and an alkoxyl group, and n is an integer equal to at least

         10), covering the source and drain electrodes and on the electrically insulating film between the source and drain electrodes.

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