Method of making a field effect transistor
First Claim
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1. A method of fabricating a field effect transistor comprising:
- forming a gate electrode on an electrically insulating substrate;
forming an electrically insulating film on the substrate covering the gate electrode;
forming source and drain electrodes on the electrically insulating film on opposite sides of the gate electrode; and
forming a semiconducting film of a π
-conjugated polymer having the chemical structure ##STR16## (where R1 and R2 are one of hydrogen, an alkyl group, and an alkoxyl group, and n is an integer equal to at least
10), covering the source and drain electrodes and on the electrically insulating film between the source and drain electrodes.
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Abstract
A method of fabricating a field effect transistor including forming a gate electrode on an electrically insulating substrate; forming an electrically insulating film on the substrate covering the gate electrode; forming source and drain electrodes on the electrically insulating film on opposite sides of the gate electrode; forming a semiconducting film of a π-conjugated polymer on the source and drain electrodes and on the electrically insulating film between the source and drain electrodes.
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Citations
20 Claims
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1. A method of fabricating a field effect transistor comprising:
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forming a gate electrode on an electrically insulating substrate; forming an electrically insulating film on the substrate covering the gate electrode; forming source and drain electrodes on the electrically insulating film on opposite sides of the gate electrode; and forming a semiconducting film of a π
-conjugated polymer having the chemical structure ##STR16## (where R1 and R2 are one of hydrogen, an alkyl group, and an alkoxyl group, and n is an integer equal to at least
10), covering the source and drain electrodes and on the electrically insulating film between the source and drain electrodes. - View Dependent Claims (2, 3, 7, 8, 9, 13)
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4. A method of fabricating a field effect transistor comprising:
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forming a gate electrode on an electrically insulating substrate; forming an electrically insulating film on the substrate and covering the gate electrode; forming a semiconducting film of a π
-conjugated polymer having the chemical structure ##STR18## (where R1 and R2 are one of hydrogen, an alkyl group, and an alkoxyl group, and n is an integer equal to at least
10), on the electrically insulating film; andforming source and drain electrodes on the semiconducting film on opposite sides of the gate electrode. - View Dependent Claims (5, 6, 10, 11, 12, 14)
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15. A method of fabricating a field effect transistor comprising:
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forming an electrically insulating film covering opposed first and second surfaces of a substrate; forming source and drain electrodes spaced apart by an opening on the electrically insulating film opposite the first surface of the substrate; forming a semiconducting film of a π
-conjugated polymer having the chemical structure ##STR20## (where R1 and R2 are one of hydrogen, an alkyl group, and an alkoxyl group, and n is an integer equal to at least
10), covering the source and drain electrodes and the electrically insulating film in the opening between the source and drain electrodes;removing a part of the electrically insulating film opposite the second surface of the substrate, opposite the opening between the source and drain electrodes, exposing the substrate; and forming a gate electrode on the second surface of the substrate opposite the opening between the source and drain electrodes. - View Dependent Claims (16, 17, 18, 19, 20)
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Specification