Method for making multilayered coaxial interconnect structure

• US 6,060,383 A
• Filed: 08/10/1998
• Issued: 05/09/2000
• Est. Priority Date: 08/10/1998
• Status: Expired due to Term

• Current Assignee: GlobalFoundries, Inc.
• Original Assignee: Advanced Micro Devices, Inc.
• Inventors: Nogami, Takeshi, Pramanick, Shekhar, Lopatin, Sergey
• Primary Examiner(s): Thomas, Tom
• Assistant Examiner(s): Souw, Bernard E.
• Application Number:
  US09/131,919
• Time in Patent Office: 638 Days
• Field of Search: 438/622, 438/627, 438/643, 438/669, 438/672, 438/675
• US Class Current: 438/622
• CPC Class Codes: H01L 21/76885 By forming conductive members before deposition of protective insulating material, e.g. pillars, studs
• CPC Class Codes: H01L 23/5222 Capacitive arrangements or effects of, or between wiring layers other capacitive arrangements H01L23/642
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

A method of forming a multi-layered interconnect structure is provided. A first conductive pattern is formed over an insulation layer. A first dielectric material is deposited over the first conductive pattern, and plugs are formed in the first dielectric material. A second conductive pattern is formed over the first dielectric material and plugs so as to form the multi-layered interconnect structure in part. Then, the first dielectric material is stripped away to leave the multi-layered interconnect structure exposed to air. A thin layer of second dielectric material is deposited so as to coat at least a portion of the interconnect structure. Next, a thin layer of metal is deposited so as to coat the at least a portion of the interconnect structure coated with the thin layer of second dielectric material. A third dielectric material is deposited over the interconnect structure to replace the stripped away first dielectric material.

Claims

1. A method of forming a multi-layered interconnect structure, comprising the steps of:

forming a first conductive pattern over an insulation layer;

depositing a first dielectric material over the first conductive pattern;

forming plugs in the first dielectric material;

forming a second conductive pattern over the first dielectric material and plugs so as to form a multi-layered interconnect structure;

stripping the first dielectric material; and

depositing a second dielectric material over the interconnect structure to replace the stripped away first dielectric material.

2. The method of claim 1 further including the step of having the second dielectric material be of lower dielectric constant than the first dielectric material.

3. The method of claim 1 further including the step of using SiO₂ as the first dielectric material.

4. The method of claim 1 further including the step of using Si₃ N₄ as the first dielectric material.

5. The method of claim 1 further including the step of using polyimides as the second dielectric material.

6. The method of claim 1 further including the step of using Teflon as the second dielectric material.

7. The method of claim 1 further including the step of using an aerogel as the second dielectric material.

8. The method of claim 1 further including the step of using tungsten as material for the plug.

9. A method of forming an interconnect structure having at least a coaxial portion, comprising the steps of:

forming a first conductive pattern over an insulation layer;

depositing a first dielectric material over the first conductive pattern;

forming plugs in the first dielectric material;

forming a second conductive pattern over the first dielectric material and plugs so as to form the interconnect structure;

stripping the first dielectric material;

depositing a thin layer of second dielectric material so as to coat at least a portion of the interconnect structure; and

depositing a thin layer of metal so as to coat the at least a portion of the interconnect structure coated with the thin layer of second dielectric material.

10. The method of claim 9 further including a step of depositing a third dielectric material over the interconnect structure so as to substantially replace the stripped away first dielectric material.

11. The method of claim 9 further including the step of using atomic layer deposition to apply at least one of the thin layer of second dielectric material and thin layer of metal.

12. The method of claim 9 further including the step of using at least one of:

vacuum evaporation, chemical vapor deposition, and electrochemical deposition to apply at least one of the thin layer of second dielectric material and thin layer of metal.

13. The method of claim 9 further including the step of using one of SiO₂, Si₃ N₄, and silicon oxynitride as the second dielectric material.

14. The method of claim 9 further including the step of using tantalum nitride (Ta₂ N) as the thin metal layer.

15. The method of claim 9 further including the step of using one of SiO₂ and Si₃ N₄ as the first dielectric material.

16. A method of forming an interconnect structure having at least a coaxial portion, comprising the steps of:

forming a first conductive pattern over an insulation layer;

depositing a first dielectric material over the first conductive pattern;

forming plugs in the first dielectric material;

forming a second conductive pattern over the first dielectric material and plugs so as to substantially form the interconnect structure;

stripping the first dielectric material;

depositing a thin layer of second dielectric material so as to coat at least a portion of the interconnect structure;

depositing a thin layer of metal so as to coat the at least a portion of the interconnect structure coated with the thin layer of second dielectric material; and

depositing a third dielectric material over the interconnect structure to replace the stripped away first dielectric material.

17. The method of claim 16 further including a step of creating a barrier layer via a damascene process so as to mitigate diffusion of metal from at least one of the first conductive pattern, plugs and the second conductive pattern into at least one of the first dielectric material and the third dielectric material.