Method for making multilayered coaxial interconnect structure
First Claim
1. A method of forming a multi-layered interconnect structure, comprising the steps of:
- forming a first conductive pattern over an insulation layer;
depositing a first dielectric material over the first conductive pattern;
forming plugs in the first dielectric material;
forming a second conductive pattern over the first dielectric material and plugs so as to form a multi-layered interconnect structure;
stripping the first dielectric material; and
depositing a second dielectric material over the interconnect structure to replace the stripped away first dielectric material.
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Accused Products
Abstract
A method of forming a multi-layered interconnect structure is provided. A first conductive pattern is formed over an insulation layer. A first dielectric material is deposited over the first conductive pattern, and plugs are formed in the first dielectric material. A second conductive pattern is formed over the first dielectric material and plugs so as to form the multi-layered interconnect structure in part. Then, the first dielectric material is stripped away to leave the multi-layered interconnect structure exposed to air. A thin layer of second dielectric material is deposited so as to coat at least a portion of the interconnect structure. Next, a thin layer of metal is deposited so as to coat the at least a portion of the interconnect structure coated with the thin layer of second dielectric material. A third dielectric material is deposited over the interconnect structure to replace the stripped away first dielectric material.
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Citations
17 Claims
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1. A method of forming a multi-layered interconnect structure, comprising the steps of:
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forming a first conductive pattern over an insulation layer; depositing a first dielectric material over the first conductive pattern; forming plugs in the first dielectric material; forming a second conductive pattern over the first dielectric material and plugs so as to form a multi-layered interconnect structure; stripping the first dielectric material; and depositing a second dielectric material over the interconnect structure to replace the stripped away first dielectric material. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A method of forming an interconnect structure having at least a coaxial portion, comprising the steps of:
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forming a first conductive pattern over an insulation layer; depositing a first dielectric material over the first conductive pattern; forming plugs in the first dielectric material; forming a second conductive pattern over the first dielectric material and plugs so as to form the interconnect structure; stripping the first dielectric material; depositing a thin layer of second dielectric material so as to coat at least a portion of the interconnect structure; and depositing a thin layer of metal so as to coat the at least a portion of the interconnect structure coated with the thin layer of second dielectric material. - View Dependent Claims (10, 11, 12, 13, 14, 15)
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16. A method of forming an interconnect structure having at least a coaxial portion, comprising the steps of:
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forming a first conductive pattern over an insulation layer; depositing a first dielectric material over the first conductive pattern; forming plugs in the first dielectric material; forming a second conductive pattern over the first dielectric material and plugs so as to substantially form the interconnect structure; stripping the first dielectric material; depositing a thin layer of second dielectric material so as to coat at least a portion of the interconnect structure; depositing a thin layer of metal so as to coat the at least a portion of the interconnect structure coated with the thin layer of second dielectric material; and depositing a third dielectric material over the interconnect structure to replace the stripped away first dielectric material. - View Dependent Claims (17)
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Specification