Ion source having wide output current operating range

• US 6,060,718 A
• Filed: 02/26/1998
• Issued: 05/09/2000
• Est. Priority Date: 02/26/1998
• Status: Expired due to Fees

• Current Assignee: Axcelis Technologies Incorporated
• Original Assignee: Eaton Corp. (Wisconsin) (Eaton Corporation PLC.)
• Inventors: Sato, Masateru, Brailove, Adam A.
• Primary Examiner(s): Anderson, Bruce C.
• Application Number:
  US09/031,423
• Time in Patent Office: 803 Days
• Field of Search: 250/423 R, 250/492.21, 250/505.1
• US Class Current: 250/505.1
• CPC Class Codes: H01J 2237/31701 Ion implantation
• CPC Class Codes: H01J 27/16 using high-frequency excitation, e.g. microwave excitation

Abstract

An attenuator (90) for an ion source (26) is provided. The ion source comprises a plasma chamber (76) in which a gas is ionized by an exciter (78) to create a plasma which is extractable through at least one aperture (64) in an apertured portion (50) of the chamber to form an ion beam. The attenuator (90) comprises a member (90) positioned within the chamber (76) intermediate the exciter (78) and the at least one aperture (64), the member providing at least one first opening (97) corresponding the at least one aperture (64), and being moveable between first and second positions with respect to the at least one aperture. In one embodiment, in the first position, the member is positioned adjacent the aperture (64) to obstruct at least a portion of the aperture, and in the second position the member is positioned away from the aperture (64) so as not to obstruct the aperture. In a second embodiment, the aperture (64) resides in an aperture plate (50) and (i) the member and the aperture plate form a generally closed region (102) between the aperture plate and the chamber (76) when the member is in the first position, and (ii) the aperture (64) is in direct communication with the chamber (76) when the member is in the second position. In this second embodiment, plasma within the chamber (76) diffuses through the region (102) before being extracted through the aperture in the first position, and plasma within the chamber is extracted directly through the aperture in the second position.

Claims

1. An attenuator (90) for an ion source (26), the ion source comprising a plasma chamber (76) in which a gas is ionized by an exciter (78) to create a plasma which is extractable through at least one aperture (64) in an aperture plate (50) of said chamber to form an ion beam, said attenuator (90) comprising:

a member (90) positioned within said chamber (76) intermediate said exciter (78) and said at least one aperture (64), said member providing at least one first opening (97) corresponding said at least one aperture (64), said member being moveable between first and second positions with respect to said at least one aperture, wherein said member and said aperture plate form a generally closed region (102) therebetween when said member is in said first position, and wherein said aperture (64) is in direct communication with said chamber (76) when said member is in said second position, such that in said first position plasma within said chamber (76) diffuses through said region (102) and is extracted through said aperture and in said second position plasma within said chamber is extracted directly through said aperture.

2. The ion source attenuator (90) of claim 1, wherein said member is moveable from (i) said first position wherein said member is positioned adjacent said aperture (64) to obstruct at least a portion of said aperture to (ii) said second position wherein said member is positioned away from said aperture (64) so as not to obstruct said aperture.

3. The ion source attenuator (90) of claim 2, wherein said member moves between said first and second positions by sliding in a direction which is parallel to the plane of said aperture plate.

4. The ion source attenuator (90) of claim 2, wherein said member (90) comprises two portions (90A, 90B) which move between said first and second positions by pivoting toward and away from said aperture plate (50), respectively.

5. The ion source attenuator (90) of claim 2, wherein said member is provided with first and second openings (104, 100) corresponding to said first and second positions, said second opening (100) being larger in size than said first opening (104).

6. The ion source attenuator (90) of claim 5, wherein said first and second openings (104, 100) in said member are formed by a single variable opening the size of which is made variable.

7. The ion source attenuator (90) of claim 6, wherein the size of said single variable opening is made infinitely variable to provide for an infinite number of modes of operation of said ion source, the size of said single variable opening being determined by a control system which receives ion source operating conditions as inputs and controls the size of the single variable opening in response thereto.

8. The ion source attenuator (90) of claim 2, wherein said member is electrically biased with respect to said chamber aperture.

9. The ion source attenuator (90) of claim 1, wherein plasma contained within said generally closed region (102) is of lesser density than the plasma contained within said plasma chamber (76).

10. An ion source (26), comprising:

a plasma chamber (76) in which a gas is ionized by an exciter (78) to create a plasma which is extractable through at least one aperture (64) in an aperture plate (50) of said chamber to form an ion beam, said attenuator (90) comprising;

a member (90) positioned within said chamber (76) intermediate said exciter (78) and said at least one aperture (64), said member providing at least one first opening (97) corresponding said at least one aperture (64), said member being moveable between first and second positions with respect to said at least one aperture, wherein said member and said aperture plate form a generally closed region (102) therebetween when said member is in said first position, and wherein said aperture (64) is in direct communication with said chamber when said member is in said second position, such that in said first position plasma within said chamber (76) diffuses through said region (102) and is extracted through said aperture and in said second position plasma within said chamber is extracted directly through said aperture.

11. The ion source (26) of claim 10, wherein said member is moveable from (i) said first position wherein said member is positioned adjacent said aperture (64) to obstruct at least a portion of said aperture to (ii) said second position wherein said member is positioned away from said aperture (64) so as not to obstruct said aperture.

12. The ion source (26) of claim 11, wherein said member moves between said first and second positions by sliding in a direction which is parallel to the plane of said aperture plate.

13. The ion source (26) of claim 11, wherein said member (90) comprises two portions (90A, 90B) which move between said first and second positions by pivoting toward and away from said aperture plate (50), respectively.

14. The ion source (26) of claim 10, wherein plasma contained within said generally closed region (102) is of lesser density than the plasma contained within said plasma chamber (76).

15. The ion source (26) of claim 11, wherein said member is provided with first and second openings (104, 100) corresponding to said first and second positions, said second opening (100) being larger in size than said first opening (104).

16. The ion source (26) of claim 15, wherein said first and second openings (104, 100) in said member are formed by a single variable opening the size of which is made variable.

17. The ion source (26) of claim 16, wherein the size of said single variable opening is made infinitely variable to provide for an infinite number of modes of operation of said ion source, the size of said single variable opening being determined by a control system which receives ion source operating conditions as inputs and controls the size of the single variable opening in response thereto.

18. The ion source (26) of claim 11, wherein said member is electrically biased with respect to said chamber aperture.