Interconnection layer structure in a semiconductor integrated circuit device having macro cell regions

• US 6,060,784 A
• Filed: 12/18/1996
• Issued: 05/09/2000
• Est. Priority Date: 12/18/1995
• Status: Expired due to Fees

• Current Assignee: NEC Electronics Corporation (Renesas Electronics Corporation)
• Original Assignee: NEC Corporation
• Inventors: Oda, Noriaki
• Primary Examiner(s): Arroyo, Teresa M.
• Application Number:
  US08/768,577
• Time in Patent Office: 1,238 Days
• Field of Search: 257/758, 257/915, 257/751, 257/763, 257/764, 257/765
• US Class Current: 257/758
• CPC Class Codes: H01L 23/5283 Cross-sectional geometry
• CPC Class Codes: H01L 23/53223 Additional layers associated with aluminium layers, e.g. adhesion, barrier, cladding layers
• CPC Class Codes: H01L 27/11803 using field effect technology
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: Y10S 257/915 with titanium nitride portion or region

Abstract

An interconnection layer extends across at least a macro cell region and at least a circuit region other than the macro cell region, the macro cell region and the circuit region being monolithically integrated into a semiconductor device, wherein the interconnection layer in the macro cell region is thinner than the interconnection layer in the circuit region.

Claims

1. A semiconductor device comprising:

a semiconductor substrate having a first region with first transistors therein and a second region with second transistors therein;

an insulating layer on said substrate and having a planar top surface extending over said first region and said second region;

plural first conductive interconnection lines directly on said top surface of said insulating layer and first vias connecting respective ones of said first interconnection lines to respective ones of said first transistors, said first interconnection lines having lengths across said top surface whose average length is a first average length, and each of said first interconnection lines having a first thickness perpendicular to said top surface and a first width parallel to said top surface; and

plural second conductive interconnection lines directly on said top surface of said insulating layer and second vias connecting respective ones of said second interconnection lines to respective ones of said second transistors, said second interconnection lines having lengths across said top surface whose average length is a second average length that is greater than said first average length, and each of said second interconnection lines having said first width and a second thickness perpendicular to said top surface that is greater than said first thickness.

2. The device of claim 1, wherein said second thickness is about twice said first thickness.

3. The device of claim 1, wherein said first average length is less than two millimeters and said second average length is greater than two millimeters.

4. The device of claim 1, wherein said insulating layer has a planar bottom surface.

5. A semiconductor device comprising:

a semiconductor substrate having a first region with first transistors therein and a second region with second transistors therein;

an insulating layer on said substrate and having a planar top surface extending over said first region and said second region;

plural first conductive interconnection lines directly on said top surface of said insulating layer and first vias connecting respective ones of said first interconnection lines to respective ones of said first transistors, said first interconnection lines having lengths across said top surface whose average length is a first average length and thicknesses perpendicular to said top surface whose average thickness is a first average thickness and widths parallel to said top surface whose average width is a first average width; and

plural second conductive interconnection lines directly on said top surface of said insulating layer and second vias connecting respective ones of said second interconnection lines to respective ones of said second transistors, said second interconnection lines having lengths across said top surface whose average length is a second average length that is greater than said first average length, and widths parallel to said top surface whose average width is a second average width that is the same as said first average width, and thicknesses perpendicular to said top surface whose average thickness is a second average thickness that is greater than said first average thickness.

6. The device of claim 5, wherein said second average thickness is about twice said first average thickness.

7. The device of claim 5, wherein said first average length is less than two millimeters and said second average length is greater than two millimeters.

8. The device of claim 5, wherein said insulating layer has a planar bottom surface.

9. A semiconductor device comprising:

a semiconductor substrate with plural first transistors and plural second transistors thereon;

an insulating layer on said substrate and that has a planar top surface over said first and second transistors;

plural first conductive interconnection lines that have lengths across said top surface whose average length is less than two millimeters and first vias connecting respective ones of said first interconnection lines to respective ones of said first transistors, each of said first interconnection lines having a first thickness perpendicular to said top surface and a first width parallel to said top surface; and

plural second conductive interconnection lines that have lengths across said top surface whose average length is more than two millimeters and second vias connecting respective ones of said second interconnection lines to respective ones of said second transistors, each of said second interconnection lines having said first width and a second thickness perpendicular to said top surface that is about twice said first thickness.