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Instantaneous junction temperature detection

  • US 6,060,792 A
  • Filed: 05/18/1998
  • Issued: 05/09/2000
  • Est. Priority Date: 05/20/1997
  • Status: Expired due to Fees
First Claim
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1. A circuit for detecting a junction temperature of an insulated gate bipolar transistor (IGBT), the IGBT being alternately biased on and off in response to a gate signal to control an amount of output current, the circuit comprising:

  • a differentiator circuit operable to receive a collector to emitter voltage of the IGBT and produce an output voltage proportional to a rate at which the collector to emitter voltage changes; and

    a feedback circuit operable to receive the output voltage and alter the gate signal when the output voltage indicates that the rate at which the collector to emitter voltage changes is outside a predetermined limit.

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