Temperature sensing system for use in a radio frequency environment

• US 6,063,234 A
• Filed: 09/10/1997
• Issued: 05/16/2000
• Est. Priority Date: 09/10/1997
• Status: Expired due to Term

• Current Assignee: Lam Research Corporation
• Original Assignee: Lam Research Corporation
• Inventors: Chen, Jian Janson, Kennedy, William S.
• Primary Examiner(s): Dang, Thi
• Assistant Examiner(s): Zervigon, Rudy
• Application Number:
  US08/927,030
• Time in Patent Office: 979 Days
• Field of Search: 219/390, 219/10.77, 219/121, 73/362 SC, 324/95, 242/159, 374/161, 128/303.18, 156/345
• US Class Current: 156/345.27
• CPC Class Codes: G01K 7/00 Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat giving results other than momentary value of temperature G01K3/00 ; Power supply therefor, e.g. using thermoelectric elements

Abstract

The invention relates to a temperature sensing system that accurately measures temperatures of articles or areas using a contact sensor even in a high radio frequency environment. The temperature sensing system includes a sensor probe that contacts with an article or area that is to have its temperature monitored, and a control circuit to amplify signals from the sensor probe. When significant amounts of radio frequency (RF) interference are present, the temperature sensing can be provided with RF shielding, RF filtering, isolated amplifying and/or multiple stages of low pass filtering that suppress the RF interference. The temperature sensing system is particularly well suited for monitoring and measuring temperatures within semiconductor manufacturing equipment, such as etching, deposition, and other processing chambers.

Claims

1. A temperature sensing system, comprising:

a sensor probe having a housing and a thermal sensing device positioned within the housing, the thermal sensing device produces an electrical signal based on a measured temperature;

a shielded cable coupled to said sensor probe, said shielded cable includes at least one wire;

a RF filter circuit coupled to the at least one wire within said shielded cable, said RF filter circuit receives the electrical signal produced by said sensor probe via said shielded cable and removes significant amounts of RF interference from the electrical signal and outputs a filtered electrical signal; and

a control circuit coupled to said RF filter circuit, said control circuit amplifies the filtered electrical signal.

2. A temperature sensing system as recited in claim 1, wherein said control circuit isolates AC components in the filtered electrical signal and amplifies DC components of the filtered electrical signal.

3. A temperature sensing system as recited in claim 1, wherein said temperature sensing system effectively measures the measured temperature even when the sensor probe is subjected to a substantial amount of RF interference.

4. A temperature sensing system as recited in claim 3,

wherein said shielded cable includes wires, and

wherein the first end of the housing is closed, and the thermal sensing device is positioned proximate to the first end of the housing.

5. A temperature sensing system as recited in claim 1, wherein the housing has a first end that contacts with an article or area to obtain the measured temperature thereof, and a second end that has an opening to receive an end of said shielded cable.

6. A temperature sensing system as recited in claim 1,

wherein said shielded cable has a shield, and

wherein the shield is directly grounded to provide shielding from RF interference.

7. A temperature sensing system as recited in claim 1, wherein said temperature sensing system is used with a semiconductor processing equipment,

wherein said shielded cable has a shield, and

wherein the shield is grounded through an inductor to provide DC grounding while not perturbing RF tuning and discharge of a semiconductor processing chamber in the semiconductor processing equipment.

8. A temperature sensing system as recited in claim 1, wherein said temperature sensing system is used with a semiconductor processing equipment,

wherein said shielded cable has a shield, and

wherein the shield is grounded through an inductor and a capacitor connected in parallel to provide transient suppression in addition to DC grounding and less perturbation to RF tuning and discharge of a semiconductor processing chamber in the semiconductor processing equipment.

9. A temperature sensing system as recited in claim 1,

wherein the housing has a first end that contacts with an article or area to obtain the measured temperature thereof, and a second end that has an opening to receive an end said shielded cable,

wherein said temperature sensing system is used with a semiconductor processing equipment, and

wherein said shielded cable includes an inner shield that provides shielding against RF interference, and an outer shield for safe operation where said shielded cable extends outside of a semiconductor processing chamber of the semiconductor processing equipment.

10. A temperature sensing system as recited in claim 9, wherein a single common ground from an AC power supply is provided for said control circuit, the outer shield, the semiconductor processing chamber, and said RF filter circuit.

11. A temperature sensing system as recited in claim 1,

wherein said shielded cable includes wires, and

wherein the thermal sensing device produces a plurality of electrical signals that couple to the wires within said shielded cable.

12. A temperature sensing system as recited in claim 1,

wherein the housing has a first end that contacts with an article or area to obtain the measured temperature thereof, and

wherein the article or area is internal to a semiconductor processing chamber of a piece of semiconductor manufacturing equipment.

13. A temperature sensing system as recited in claim 12, wherein said shielded cable includes at least two wires connected to said sensor probe, an inner shield connected to the housing of said sensor probe, and an outer shield where said shielded cable extends outside of the semiconductor processing chamber.

14. A temperature sensing system as recited in claim 12, wherein the semiconductor processing chamber has an opening capable of receiving said sensor probe so that the first end of the housing of said sensor probe is able to contact with the article or area internal to the semiconductor processing chamber.

15. A temperature sensing system as recited in claim 14, wherein a mechanical force is exerted on said sensor probe to push said sensor probe against the article or area internal to the semiconductor processing chamber to improve thermal conductivity between the first end of the housing of said sensor probe and the article or area internal to the semiconductor processing chamber.

16. A temperature sensing system as recited in claim 15, wherein the opening in the semiconductor processing chamber is fully filled by said sensor probe and a gasket positioned between the opening and said sensor probe.

17. A temperature sensing system as recited in claim 1, wherein said RF filter circuit and said control circuit together provide a series of filtering operations to remove large quantities of RF interference that is picked-up by said sensor probe.

18. A temperature sensing system as recited in claim 1, wherein said control circuit is RF shielded from said RF filter circuit.

19. A temperature sensing probe, comprising:

a housing containing a thermal sensing device positioned within the housing, the thermal sensing device produces an electrical signal based on a measured temperature; and

a shielded cable containing a least one wire, the at least one wire receives the electrical signal from the thermal sensing device.

20. A temperature sensing probe as recited in claim 19, wherein the thermal sensing device comprises a thermistor.

21. A temperature sensing probe as recited in claim 19, wherein the thermal sensing device is a solid state sensor.

22. A temperature sensing probe as recited in claim 19, wherein at least a major portion of the housing is made of stainless steel and/or brass.

23. A temperature sensing probe as recited in claim 19, wherein the housing is a metallic material that is electrically conductive.

24. A temperature sensing probe as recited in claim 19, wherein the housing has a thickness at least as thick as a skin depth for a lowest RF frequency of interest.

25. A temperature sensing probe as recited in claim 19, wherein the housing has a first end and a second end, the first end of the housing is closed and the thermal sensing device is positioned proximate to the first end of the housing, and the second end has an opening to receive an end of said shielded cable.

26. A temperature sensing probe as recited in claim 25,

wherein the shielded cable includes an inner shield and an outer shield, the inner shield and the outer shield are separated by an insulating layer and are concentric with one another and with a least one wire, and

wherein the opening in the second end of the housing is soldered to the outer shield of the end of the shielded cable received in the opening at the second end of the housing.

27. A temperature sensing probe as recited in claim 25, wherein the housing has a first end and a second end, the first end of the housing is closed and the thermal sensing device abuts against the first end of the housing.

28. A temperature sensing probe as recited in claim 27, wherein a layer of thermal material is placed between the first end of the housing and the thermal sensing device.

29. A temperature sensing system, comprising:

a temperature sensing device that produces an electrical signal based on a measured temperature;

RF filter means for receiving the electrical signal produced by said temperature sensing device and removing significant amounts of RF interference from the electrical signal and outputs a filtered electrical signal;

isolation means for rejecting residual RF interference from the filtered electrical signal; and

amplification means for amplifying the filtered electrical signal.

30. A temperature sensing system as recited in claim 29, wherein said temperature sensing system further comprises:

RF shielding means for providing RF shielding for the electrical signal.

31. A temperature sensing system as recited in claim 29, wherein said temperature sensing system effectively measures the measured temperature even when the temperature sensing probe is subjected to a substantial amount of RF interference.

32. A temperature sensing system as recited in claim 29, wherein the temperature sensing device is contained within an electrically conductive housing having a first end that contacts with an article or area to obtain the measured temperature thereof.

33. A temperature sensing system as recited in claim 32, wherein the article or area is internal to a semiconductor processing chamber of a piece of semiconductor manufacturing equipment.