Manufacture of a silicon waveguide structure

• US 6,063,299 A
• Filed: 01/13/1999
• Issued: 05/16/2000
• Est. Priority Date: 10/23/1998
• Status: Expired due to Fees

• Current Assignee: Bookham Incorporated (Oclaro (North America), Inc.)
• Original Assignee: Bookham Incorporated (Oclaro (North America), Inc.)
• Inventors: Drake, John Paul, Shaw, Matthew Peter
• Primary Examiner(s): POWELL, WILLIAM A
• Application Number:
  US09/229,424
• Time in Patent Office: 489 Days
• Field of Search: 216/2, 216/24, 438/719, 438/724, 438/753, 438/735, 438/744, 438/757
• US Class Current: 216/24
• CPC Class Codes: G02B 6/122 Basic optical elements, e.g. light-guiding paths
• CPC Class Codes: G02B 6/126 using polarisation effects G02B6/1226 takes precedence
• CPC Class Codes: G02B 6/136 by etching
• CPC Class Codes: G02F 1/025 in an optical waveguide structure G02F1/017, G02F1/2257 take precedence

Abstract

A process for making a silicon rib wavegide structure is described comporising the following steps:

(i) forming a window in a protective layer on the surface of a silicon wafer to expose a part of said surface;

(ii) depositing a buffer layer at least over said exposed surface;

(iii) carrying out an etch step to etch the buffer layer and silicon outside a protected rib portion thereby to form a silicon rib with the buffer layer on its upper surface; and

(iv) forming a layer of cladding at least on side walls of the silicon rib.

Claims

1. A process for making a silicon rib waveguide structure comprising:

forming a window in a protective layer on the surface of a silicon wafer to expose a part of said surface;

depositing a buffer layer at least over said exposed surface;

carrying out an etch step to etch the buffer layer and silicon outside a protected rib portion thereby to form a silicon rib with the buffer layer on its upper surface; and

forming a layer of cladding at least on side walls of the silicon rib.

2. A process according to claim 1, wherein the buffer layer comprises silicon nitride.

3. A process according to claim 2, wherein the buffer layer is deposited using an LPCVD process.

4. A process according to claim 1, wherein the buffer layer is a native oxide.

5. A process according to claim 1, wherein the thickness of the buffer layer is in the range 20-500 Å

and preferably in the range 80-220 Å

.

6. A process according to claim 1, which further comprises the step of forming a light absorbing layer on the buffer layer to define a polariser.

7. A process according to claim 1, wherein the step of forming a layer of cladding comprises carrying out an oxidation step such that a cladding layer of oxide is formed on the side walls of the silicon rib.

8. A process according to claim 1, wherein the cladding layer and the buffer layer have different etch characteristics.

9. A process according to claim 1, which further comprises selectively removing either the buffer layer from the top surface of the rib or the cladding layer from at least one of the side walls of the rib, and introducing dopants into the area from which the buffer layer or cladding layer respectively has been removed.