Formation of group III-V nitride films on sapphire substrates with reduced dislocation densities

• US 6,064,078 A
• Filed: 05/22/1998
• Issued: 05/16/2000
• Est. Priority Date: 05/22/1998
• Status: Expired due to Term

• Current Assignee: Xerox Corporation (Xerox Holdings Corp.)
• Original Assignee: Xerox Corporation (Xerox Holdings Corp.)
• Inventors: Romano, Linda T., Northrup, John E., Bringans, Ross D.
• Primary Examiner(s): Tran, Minh Loan
• Application Number:
  US09/083,137
• Time in Patent Office: 725 Days
• Field of Search: 257/94, 257/96, 257/76, 257/103, 257/190, 438/46, 438/47, 438/94, 438/516, 438/518, 438/95
• US Class Current: 257/96
• CPC Class Codes: H01L 21/0242 Crystalline insulating materials
• CPC Class Codes: H01L 21/02458 Nitrides
• CPC Class Codes: H01L 21/02491 Conductive materials
• CPC Class Codes: H01L 21/02499 Monolayers
• CPC Class Codes: H01L 21/02502 consisting of two layers
• CPC Class Codes: H01L 21/0254 Nitrides
• CPC Class Codes: H01L 33/007 comprising nitride compounds

Abstract

A single layer of atoms of a selected valence is deposited between a substrate and a group III-V nitride film to improve the quality of the nitride film and of subsequently deposited nitride films on the substrate. The interlayer provides local charge neutrality at the interface, thereby promoting two-dimensional growth of the nitride film and reduced dislocation densities. When the substrate is sapphire, the interlayer should include atoms of group II elements and possibly group III elements. The structure can include a group III-V nitride buffer layer on the interlayer to further enhance the quality of the group III-V nitride films. The structures can be used in blue light emitting optoelectronic devices.

Claims

1. A semiconductor structure, comprising:

a substrate;

an interlayer formed on the substrate, the interlayer including a single atomic layer of atoms of at least one group II element; and

a group III-V nitride film formed on the interlayer.

2. The semiconductor structure of claim 1, wherein the interlayer further includes atoms of at least one group III element.

3. The semiconductor structure of claim 1, wherein the interlayer includes about a monolayer of the atoms of the at least one group II element.

4. The semiconductor structure of claim 1, wherein the group III-V nitride film is GaN or AlN.

5. The semiconductor structure of claim 1, wherein the substrate is a sapphire substrate.

6. The semiconductor structure of claim 1, wherein the substrate is a sapphire substrate and the group III-V nitride film is AlN.

7. The semiconductor structure of claim 6, wherein the sapphire substrate is c-plane and the ratio of the number of oxygen atoms in each (0001) plane of the sapphire substrate to the number of group II atoms of the interlayer bonding with the oxygen atoms is about 1.25.

8. The semiconductor structure of claim 7, wherein the interlayer includes zinc.

9. The semiconductor structure of claim 6, wherein the sapphire substrate is A-plane and the fraction of group II atoms in the interlayer is about 0.70.

10. The semiconductor structure of claim 9, wherein the interlayer includes zinc.

11. The semiconductor structure of claim 6, wherein an interface between the substrate and the group III-V nitride film has at least approximate charge neutrality.

12. The semiconductor structure of claim 1, wherein the III-V nitride film is an epitaxial layer.

13. A semiconductor structure comprising:

a substrate;

an interlayer formed on the substrate, the interlayer including a single atomic layer of atoms of at least one group II element;

a group III-V nitride buffer layer formed on the interlayer; and

an epitaxial group III-V nitride film formed on the buffer layer.

14. The semiconductor structure of claim 13, wherein the interlayer includes about a monolayer of the atoms of the at least one group II element.

15. The semiconductor structure of claim 13, wherein the group III-V nitride buffer layer is AlN and the group II-V nitride film is GaN.

16. The semiconductor structure of claim 13, wherein the interlayer further includes atoms of at least one group III element.

17. The semiconductor structure of claim 16, wherein an interface formed between the substrate and the group III-V nitride buffer layer has exact charge neutrality.

18. The semiconductor structure of claim 13, wherein the substrate comprises sapphire and the group III-V nitride buffer layer is AlN.

19. The semiconductor structure of claim 18, wherein the sapphire substrate is c-plane and the ratio of oxygen atoms in each (0001) plane of the sapphire substrate to group II atoms in the interlayer is about 1.25.

20. The semiconductor structure of claim 19, wherein the interlayer includes zinc.

21. The semiconductor structure of claim 18, wherein the sapphire substrate is A-plane and the fraction of group II atoms in the interlayer is about 0.70.

22. The semiconductor structure of claim 21, wherein the interlayer includes zinc.

23. The semiconductor structure of claim 13, wherein an interface between the substrate and the group III-V nitride buffer layer has at least approximate charge neutrality.

24. The semiconductor structure of claim 13, wherein the substrate is a sapphire substrate.

25. The semiconductor structure of claim 13, wherein the interlayer comprises an effective number of atoms of the at least one group II element to achieve at least approximate charge neutrality at an interface between the substrate and the group III-V nitride buffer layer.

26. A method of forming a semiconductor structure, comprising:

providing a substrate;

forming an interlayer including a single atomic layer of atoms of at least one group II element on the substrate; and

forming a group III-V nitride layer on the interlayer.

27. The method of claim 26, wherein an interface between the substrate and the group III-V nitride layer has at least approximate charge neutrality.

28. The method of claim 26, wherein the group III-V nitride layer is GaN.

29. The method of claim 26, wherein forming the group III-V nitride layer on the interlayer comprises:

forming a group III-V buffer layer on the interlayer; and

epitaxially depositing a group III-V nitride film on the buffer layer.

30. The method of claim 29, wherein the buffer layer is AlN and the group III-V nitride film is GaN.

31. The method of claim 26, wherein the interlayer comprises atoms of at least one group II element and atoms of at least one group III element, and an interface formed between the substrate and the group III-V nitride layer has exact charge neutrality.

32. The method of claim 26, wherein the substrate comprises sapphire and the group III-V nitride layer is AlN.

33. The method of claim 32, wherein the sapphire substrate is c-plane and forming the interlayer comprises depositing group II atoms on the sapphire substrate such that the ratio of the number of oxygen atoms in each (0001) plane of the sapphire substrate to the number of group II atoms of the interlayer bonding with the oxygen atoms is about 1.25.

34. The method of claim 33, wherein the interlayer includes zinc.

35. The method of claim 32, wherein the sapphire substrate is A-plane and the fraction of group II atoms in the interlayer is about 0.70.

36. The method of claim 35, wherein the interlayer includes zinc.

37. The method of claim 26, wherein forming the group III-V nitride layer comprises growing the group III-V nitride layer substantially two-dimensionally on the interlayer.

38. The method of claim 26, wherein forming the interlayer comprises ion implanting the atoms of the at least one group II element into the substrate.

39. The method of claim 26, wherein forming the interlayer comprises depositing a thin oxide layer of the least one group II element on the substrate.

40. The method of claim 26, wherein the substrate comprises sapphire.