×

Heterojunction field effect transistor

  • US 6,064,082 A
  • Filed: 05/29/1998
  • Issued: 05/16/2000
  • Est. Priority Date: 05/30/1997
  • Status: Expired due to Term
First Claim
Patent Images

1. A heterojunction field effect transistor comprising:

  • an electron moving layer;

    an electron supply layer on said electron moving layer;

    a barrier layer on said electron supply layer; and

    a contact layer on said barrier layer, a source electrode on said contact layer, wherein the bottom energy of the conduction band of said barrier layer immediately under said source electrode being decreased continuously from said electron supply layer toward said contact layer.

View all claims
  • 1 Assignment
Timeline View
Assignment View
    ×
    ×