Charged-particle beam exposure system and method

• US 6,064,807 A
• Filed: 05/24/1996
• Issued: 05/16/2000
• Est. Priority Date: 12/27/1993
• Status: Expired due to Fees

• Current Assignee: Fujitsu Limited
• Original Assignee: Fujitsu Limited
• Inventors: Hueki, Shunsuke, Yasuda, Hiroshi, Arai, Soichiro, Oae, Yoshihisa, Kai, Junichi
• Primary Examiner(s): LOUIS JACQUES, JACQUES H
• Application Number:
  US08/653,121
• Time in Patent Office: 1,453 Days
• Field of Search: 250/491.1, 250/492.2, 250/492.3, 250/492.22, 250/492.23, 250/398, 250/396 R, 250/397, 250/400, 395/500.22, 395/500.2, 395/500.21, 700/121, 700/160, 430/30, 430/296, 430/942
• US Class Current: 430/30
• CPC Class Codes: B82Y 10/00 Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
• CPC Class Codes: B82Y 40/00 Manufacture or treatment of nanostructures
• CPC Class Codes: H01J 2237/0435 Multi-aperture
• CPC Class Codes: H01J 2237/1532 Astigmatism
• CPC Class Codes: H01J 2237/1534 Aberrations
• CPC Class Codes: H01J 2237/20221 Translation
• CPC Class Codes: H01J 37/045 Beam blanking or chopping, i.e. arrangements for momentarily interrupting exposure to the discharge
• CPC Class Codes: H01J 37/153 Electron-optical or ion-optical arrangements for the correction of image defects, e.g. stigmators
• CPC Class Codes: H01J 37/20 Means for supporting or positioning the objects or the material; Means for adjusting diaphragms or lenses associated with the support introducing the objects H01J37/18
• CPC Class Codes: H01J 37/3026 Patterning strategy
• CPC Class Codes: H01J 37/3174 Particle-beam lithography, e.g. electron beam lithography

Abstract

The present invention relates to an exposure method of a multi-beam type in which a stage mounting a sample to be exposed is continuously moved in a first direction, and charged-particle beams are controlled so as to form a desired beam shape as a whole, and in which a pattern is formed on the sample by deflecting the charged-particle beams by a main deflector and a sub deflector. Patterns to be drawn are divided into pattern data on a cell stripe basis which corresponds to an area which can be exposed when the sub deflector scans the charged-particle beams one time. The pattern data on the cell stripe basis is stored into a memory. Then, position data indicative of cell stripes is stored, in an exposure sequence, together with address information concerning the memory in which the pattern data is stored. The deflection amount data relating to the main deflector and the sub deflector is calculated from the position data. Patterns are drawn on the wafer by using the pattern data and the deflection amount data.

Claims

1. An exposure method of a multi-beam type in which a stage mounting an object to be exposed is continuously moved in a first direction, and charged-particle beams are controlled so as to form a desired beam shape as a whole, and in which a pattern is formed on the object by deflecting the charged-particle beams by a main deflector and a sub deflector, the charged-particle beams exposing an exposure field including both a main field and subfields, said exposure method comprising the steps of:

(a) dividing a subfield into cell stripes corresponding to rectangular areas which can be exposed by once raster-scanning by the sub deflector, each cell stripe having a corresponding pattern and being sized for the pattern so that different sized patterns have different sized cell stripes, cell stripes having the same pattern being grouped together so that said same pattern commonly corresponds to each of the grouped cell stripes, patterns being represented by pattern data;

(b) storing the pattern data obtained for the cell stripes into a memory together with data indicating the correspondence of the patterns to the cell stripes;

(c) sorting, in an exposure sequence, position data indicative of positions of the cell stripes together with address information concerning the memory in which the pattern data is stored, so that the main deflector deflects the charged-particle beams in a zigzag exposure sequence;

(d) calculating deflection amount data relating to the main deflector and the sub deflector from the position data; and

(e) drawing patterns on the object by using the pattern data and the deflection amount data.

2. The exposure method as claimed in claim 1, wherein the step (c) comprises the step of sorting the position data together with the address information for each cell area equal to or less than a width corresponding to an area deflectable in a second direction substantially orthogonal to the first direction by means of the main deflector.

3. The exposure method as claimed in claim 2, wherein a width of the cell area in the first direction corresponds to a size of a chip to be exposed on a sample.

4. The exposure method as claimed in claim 2, wherein widths of the cell area in the first and second directions correspond to a field deflectable by the main deflector.

5. The exposure method as claimed in claim 2, wherein the step (d) comprises the steps of:

(d-1) calculating main deflection amount data necessary to deflect the charged-particle beams to a center of each sub deflection field; and

(d-2) calculating sub deflection data necessary to deflect the charged-particle beams to each cell stripe from a position determined by the main deflection amount data.

6. The exposure method as claimed in claim 1, wherein, with respect to patterns having a repetition, the step (a) changes sizes of the cell stripes in accordance with a pitch of repetition of said patterns.

7. The exposure method as claimed in claim 1, wherein the step (c) comprises the step of sorting the position data together with the address information so that the cell stripes are sequentially scanned by the charged-particle beams moved in the first direction while being shifted in a zigzag formation in a second direction substantially orthogonal to the first direction within a cell area equal to or less than a width corresponding to an area deflectable in the second direction by means of the main deflector and are moved in the first direction.

8. The exposure method as claimed in claim 1, wherein the step (c) comprises the steps of:

(c-1) sorting the position data for each cell area equal to or less than a width corresponding to an area deflectable in a second direction substantially orthogonal to the first direction by means of the main deflector; and

(c-2) sorting the position data according to values of the position data in the second direction.

9. The exposure method as claimed in claim 1, wherein the step (a) allows an overlap of cell stripes.

10. The exposure method as claimed in claim 1, wherein patterns having no repetition correspond to a cell stripe having a predetermined fixed size.

11. The exposure method as claimed in claim 1, wherein the step (a) comprises the step of setting a cell stripe with respect to an overlapping portion in which at least two of a first pattern having a repetition, a second pattern having a repetition having a repetition pitch different from that of the first pattern, and a third pattern having no repetition overlap each other.

12. The exposure method as claimed in claim 1, wherein the step (d) comprises the step of calculating all deflection amount data before drawing patterns on a sample in the step (e).

13. The exposure method as claimed in claim 1, wherein the step (d) comprises the step of calculating deflection amount data relating to a pattern to be drawn when another pattern is being drawn in the step (e).

14. The exposure method as claimed in claim 1, wherein the step (e) comprises the step of producing dot data from the pattern data and outputting the dot data to a blanking aperture array.

15. An exposure system of a multi-beam type in which a stage mounting an object to be exposed is continuously moved in a first direction, and charged-particle beams are controlled so as to form a desired beam shape as a whole, and in which a pattern is formed on the object by deflecting the charged-particle beams by a main deflector and a sub deflector, the charged-particle beams exposing an exposure field including a main field and subfields, said exposure system comprising:

first means for dividing a subfield into cell stripes corresponding to rectangular areas which can be exposed by once raster-scanning the sub deflector, each cell stripe having a corresponding pattern and being sized for the pattern so that different sized pattern have different sized cell stripes, cell stripes having the same pattern being grouped together so that said same pattern commonly corresponds to each of the grouped cell stripes, patterns being represented by pattern data;

second means for storing the pattern data obtained for the cell stripes into a memory together with data indicating the correspondence of the patterns to the cell stripes;

third means for sorting, in an exposure sequence, position data indicative of positions of the cell stripes together with address information concerning the memory in which the pattern data is stored, so that the main deflector deflects the charged-particle beams in a zigzag exposure sequence;

fourth means for calculating deflection amount data relating to the main deflector and the sub deflector from the position data; and

fifth means for drawing patterns on the object by using the pattern data and the deflection amount data.

16. The exposure system as claimed in claim 15, wherein the third means comprises means for sorting the position data together with the address information for each cell area equal to or less than a width corresponding to an area deflectable in a second direction substantially orthogonal to the first direction by means of the main deflector.

17. The exposure system as claimed in claim 16, wherein a width of the cell area in the first direction corresponds to a size of a chip to be exposed on a sample.

18. The exposure system as claimed in claim 16, wherein widths of the cell area in the first and second directions correspond to a field deflectable by the main deflector.

19. The exposure system as claimed in claim 16, wherein the fourth means comprises:

means for calculating main deflection amount data necessary to deflect the charged-particle beams to a center of each sub deflection field; and

means for calculating sub deflection data necessary to deflect the charged-particle beams to each cell stripe from a position determined by the main deflection amount data.

20. The exposure system as claimed in claim 15, wherein, with respect to patterns having a repetition, the first means changes sizes of the cell stripes in accordance with a pitch of repetition of said patterns.

21. The exposure system as claimed in claim 15, wherein the third means comprises means for sorting the position data together with the address information so that the cell stripes are sequentially scanned by the charged-particle beams moved in the first direction while being shifted in a zigzag formation in a second direction substantially orthogonal to the first direction within a cell area equal to or less than a width corresponding to an area deflectable in the second direction by means of the main deflector and are moved in the first direction.

22. The exposure system as claimed in claim 15, wherein the third means comprises:

means for sorting the position data for each cell area equal to or less than a width corresponding to an area deflectable in a second direction substantially orthogonal to the first direction by means of the main deflector; and

means for sorting the position data according to values of the position data in the second direction.

23. The exposure system as claimed in claim 15, wherein the first means allows an overlap of cell stripes.

24. The exposure system as claimed in claim 15, wherein the first means comprises means for corresponding patterns having no repetition to a cell stripe having a predetermined fixed size.

25. The exposure system as claimed in claim 15, wherein the first means comprises means for setting a cell stripe with respect to an overlapping portion in which at least two of a first pattern having a repetition, a second pattern having a repetition having a repetition pitch different from that of the first pattern, and a third pattern having no repetition overlap each other.

26. The exposure system as claimed in claim 15, wherein the fourth means comprises means for calculating all deflection amount data before drawing patterns on a sample in the fifth means.

27. The exposure system as claimed in claim 15, wherein the fourth means comprises means for calculating deflection amount data relating to a pattern to be drawn when another pattern is being drawn in the fifth means.

28. The exposure system as claimed in claim 15, wherein the fifth means comprises means for producing dot data from the pattern data and outputting the dot data to a blanking aperture array.

29. An exposure system of a multi-beam type in which a stage mounting an object to be exposed is continuously moved in a first direction, and charged-particle beams are controlled so as to form a desired beam shape as a whole, and in which a pattern is formed on the object by deflecting the charged-particle beams by a main deflector and a sub deflector, the charged-particle beams exposing an exposure field including a main field and subfields, said exposure system comprising:

an electronic circuit to divide a subfield into cell stripes corresponding to rectangular areas which can be exposed by once raster-scanning the sub deflector, each cell stripe having a corresponding pattern and being sized for the pattern so that different sized patterns have different sized cell stripes, cell strips having the same pattern being grouped together so that said same pattern commonly corresponds to each of the grouped cell stripes, patterns being represented by pattern data;

a memory to store the pattern data obtained for the cell stripes together with data indicating the correspondence of the patterns to the cell stripes;

a sorter to sort, in an exposure sequence, position data indicative of positions of the cell stripes together with address information concerning the memory in which the pattern data is stored, so that the main deflector deflects the charged-particle beams in a zigzag exposure sequence;

a second electronic circuit to calculate deflection amount data relating to the main deflector and the sub deflector from the position data; and

an apparatus to draw patterns on the object by using the pattern data and the deflection amount data.

30. A method comprising:

dividing a subfield of a charged particle beam exposure field into cell stripes, each cell stripe having a corresponding pattern and being sized for the pattern so that different sized patterns have different sized cell stripes, cell stripes having the same pattern being grouped together so that said same pattern commonly corresponds to each of the grouped cell stripes; and

deflecting a charged particle beam by a main deflector and a sub deflector to draw the patterns on an object in accordance with the correspondence of the patterns to the cell stripes.

31. An apparatus comprising:

a subfield divider dividing a subfield of a charged particle beam exposure field into cell stripes, each cell stripe having a corresponding pattern and being sized for the pattern so that different sized patterns have different sized cell stripes, cell stripes having the same pattern being grouped together so that said same pattern commonly corresponds to each of the grouped cell stripes; and

a deflector deflecting a charged particle beam by a main deflector and a sub deflector to draw the patterns on an object in accordance with the correspondence of the patterns to the cell stripes.

32. An apparatus comprising:

means for dividing a subfield of a charged particle beam exposure field into cell stripes, each cell stripe having a corresponding pattern and being sized for the pattern so that different sized patterns have different sized cell stripes, cell stripes having the same pattern being grouped together so that said same pattern commonly corresponds to each of the grouped cell stripes; and

means for deflecting a charged particle beam by a main deflector and a sub deflector to draw the patterns on an object in accordance with the correspondence of the patterns to the cell stripes.