Method of manufacturing semiconductor devices using a crystallization promoting material
First Claim
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1. A method of manufacturing a semiconductor device comprising the steps of:
- forming a semiconductor film comprising amorphous silicon on an insulating surface;
forming a mask comprising an insulating material on said semiconductor film to expose a first portion of said semiconductor film;
selectively adding a crystallization promoting material to the first portion of said semiconductor film by using said mask, said crystallization promoting material being capable of promoting crystallization of said amorphous silicon;
heating said semiconductor film and said crystallization promoting material to crystallize said semiconductor film;
selectively adding a gettering material into the first portion of the crystallized semiconductor film by using said mask;
heating the crystallized semiconductor film added with said gettering material so that the crystallization promoting material contained in the crystallized semiconductor film is gettered by said first portion;
removing the first portion of the crystallized semiconductor film after the heating of the crystallized semiconductor film with said gettering material.
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Abstract
In a method of manufacturing a semiconductor device, an insulating film having an opening is formed on an amorphous film 103 containing silicon therein. After catalytic elements are introduced from the opening, the amorphous film 103 is crystallized. Thereafter elements (phosphorus) selected from Group XV are introduced from the opening, and then a heat treatment is conducted to obtain a film having crystallinity. Thereafter, a portion of the film containing silicon into which the catalytic elements and phosphorus is introduced are removed.
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Citations
48 Claims
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1. A method of manufacturing a semiconductor device comprising the steps of:
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forming a semiconductor film comprising amorphous silicon on an insulating surface; forming a mask comprising an insulating material on said semiconductor film to expose a first portion of said semiconductor film; selectively adding a crystallization promoting material to the first portion of said semiconductor film by using said mask, said crystallization promoting material being capable of promoting crystallization of said amorphous silicon; heating said semiconductor film and said crystallization promoting material to crystallize said semiconductor film; selectively adding a gettering material into the first portion of the crystallized semiconductor film by using said mask; heating the crystallized semiconductor film added with said gettering material so that the crystallization promoting material contained in the crystallized semiconductor film is gettered by said first portion; removing the first portion of the crystallized semiconductor film after the heating of the crystallized semiconductor film with said gettering material. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 34, 35, 36, 37, 38, 39)
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9. A method of manufacturing a semiconductor device comprising the steps of:
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forming a semiconductor film comprising amorphous silicon on an insulating surface; forming a mask comprising an insulating material on said semiconductor film to expose a first portion of said semiconductor film; selectively adding a crystallization promoting material to the first portion of said semiconductor film by using said mask; first heating said semiconductor film and said crystallization promoting material to crystallize said semiconductor film; selectively adding a group XV element into the first portion of the crystallized semiconductor film by using said mark; second heating the crystallized semiconductor film added with said group XV element so that the crystallization promoting material contained in the crystallized semiconductor film is gettered by said first portion; third heating the crystallized semiconductor film in a halogen containing atmosphere after said second heating in order to remove the first portion of the crystallized semiconductor film, and to reduce a concentration of said crystallization promoting material in the crystallized semiconductor film wherein said crystallization promoting material is removed through a section of the crystallized semiconductor film which is formed by the removal of said first portion. - View Dependent Claims (10, 11, 12, 13, 14, 15, 16)
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17. A method of manufacturing a semiconductor device comprising the steps of:
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forming a semiconductor film comprising amorphous silicon on an insulating surface; forming a mask comprising an insulating material on said semiconductor film to expose a first portion of said semiconductor film; selectively adding a crystallization promoting material to the first portion of said semiconductor film by using said mask, said crystallization promoting material being for promoting crystallization of said amorphous silicon; first heating said semiconductor film and said crystallization promoting material to crystallize said semiconductor film; selectively adding a group XV element into the first portion of the crystallized semiconductor film by using said mask; second heating the crystallized semiconductor film added with said group XV element so that the crystallization promoting material contained in the crystallized semiconductor film is gettered by said first portion; removing the first portion of the crystallized semiconductor film after the first heating of the crystallized semiconductor film with said group XV element; and third heating the crystallized semiconductor film after the removing step in a halogen containing oxidizing atmosphere in order to remove the crystallization promoting material and said group XV element form the crystallized semiconductor film. - View Dependent Claims (18, 19, 20, 21, 22, 23, 24)
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25. A method of manufacturing a semiconductor device comprising the steps of:
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forming a semiconductor film comprising amorphous silicon on an insulating surface; forming a mask comprising an insulating material on said semiconductor film to expose a first portion of said semiconductor film; selective adding a crystallization promoting material to the first portion of said semiconductor film by using said mask, said crystallization promoting material being capable of promoting crystallization of said amorphous silicon; first heating said semiconductor film and said crystallization promoting material to crystallize said semiconductor film; selectively adding a gettering material into the fist portion of the crystallized semiconductor film by using said mask; second heating the crystallized semiconductor film added with said gettering material so that the crystallization promoting material contained in the crystallized semiconductor film is gettered by said first portion; removing the first portion of the crystallized semiconductor film after the heating of the crystallized semiconductor film with said gettering material; patterning the crystallized semiconductor film after said removing into at least one island comprising crystalline silicon; forming an insulating layer covering said island; and third heating said island with said insulating layer in a halogen containing oxidizing atmosphere. - View Dependent Claims (26, 27, 28, 29, 30, 31, 32, 33)
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40. A method of manufacturing a semiconductor device comprising the steps of:
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forming a semiconductor film comprising amorphous silicon on an insulating surface; forming a mask comprising an insulating material on said semiconductor film to expose a first portion of said semiconductor film; selectively adding a crystallization promoting material to the first portion of said semiconductor film by using said mask, said crystallization promoting material being capable of promoting crystallization of said amorphous silicon; heating said semiconductor film added with said crystallization promoting material to crystallize said semiconductor film; selectively adding phosphorus into the first portion of the crystallized semiconductor film by using said mask; heating the crystallized semiconductor film added with said phosphorus in order to absorb the crystallization promoting material by said first portion. - View Dependent Claims (41, 42, 43, 44, 45, 46, 47, 48)
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Specification