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Method of manufacturing semiconductor devices using a crystallization promoting material

  • US 6,066,518 A
  • Filed: 07/21/1998
  • Issued: 05/23/2000
  • Est. Priority Date: 07/22/1997
  • Status: Expired due to Term
First Claim
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1. A method of manufacturing a semiconductor device comprising the steps of:

  • forming a semiconductor film comprising amorphous silicon on an insulating surface;

    forming a mask comprising an insulating material on said semiconductor film to expose a first portion of said semiconductor film;

    selectively adding a crystallization promoting material to the first portion of said semiconductor film by using said mask, said crystallization promoting material being capable of promoting crystallization of said amorphous silicon;

    heating said semiconductor film and said crystallization promoting material to crystallize said semiconductor film;

    selectively adding a gettering material into the first portion of the crystallized semiconductor film by using said mask;

    heating the crystallized semiconductor film added with said gettering material so that the crystallization promoting material contained in the crystallized semiconductor film is gettered by said first portion;

    removing the first portion of the crystallized semiconductor film after the heating of the crystallized semiconductor film with said gettering material.

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