Substrate for electro-optical apparatus, electro-optical apparatus, method for driving electro-optical apparatus, electronic device and projection display device
First Claim
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1. An electro-optical apparatus comprising;
- a substrate;
a matrix of pixel regions formed on the substrate;
a transistor having a gate electrode and a channel region provided to each of the matrix of pixel regions;
a first scanning signal line electrically connected to the sate electrode of said transistor; and
a semiconductor layer constituting the channel region of the transistor formed on the substrate, the semiconductor layer being electrically connected to a second scanning signal line.
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Abstract
In a conventional MOS semiconductor device of a thin film SOI structure, excessive carriers accumulated in the channel region cause some problems, such as a decreased drain breakdown voltage and formation of kink in the current-voltage relationship, resulting in malfunction. Accordingly, drainage of the excessive carriers accumulated in the semiconductor layer functioning as a channel region of the thin film transistor on a substrate for electro-optical apparatuses is achieved.
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Citations
64 Claims
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1. An electro-optical apparatus comprising;
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a substrate; a matrix of pixel regions formed on the substrate; a transistor having a gate electrode and a channel region provided to each of the matrix of pixel regions; a first scanning signal line electrically connected to the sate electrode of said transistor; and a semiconductor layer constituting the channel region of the transistor formed on the substrate, the semiconductor layer being electrically connected to a second scanning signal line. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 32, 33, 34, 35, 36, 37, 38, 39, 40, 41, 42, 43, 44, 45, 46, 47, 48)
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14. An electro-optical apparatus comprising:
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a substrate; a matrix of pixel regions formed on the substrate; an N-channel type transistor having a channel region provided to each of the matrix of pixel regions; and a semiconductor layer constituting the channel region of the N-channel type transistor formed on the substrate, the semiconductor layer being electrically connected to a conductive layer and a potential equal to or lower than that of an image signal supplied to the transistor being applied to the semiconductor layer. - View Dependent Claims (15, 16, 17, 50, 51, 52, 53, 54)
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18. An electro-optical apparatus comprising:
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a substrate; a matrix of pixel regions formed on the substrate; a P-channel type transistor having a channel region provided to each of the matrix of pixel regions; and a semiconductor layer constituting the channel region of the P-channel type transistor formed on the substrate, the semiconductor layer being electrically connected to a conductive layer and a potential equal to or higher than that of an image signal supplied to said transistor being applied to the semiconductor layer. - View Dependent Claims (19, 20, 21, 55, 56, 57, 58, 59)
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22. An electro-optical apparatus comprising:
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a substrate; a matrix of pixel regions formed on the substrate; a transistor having a source and drain and a channel region, and a capacitor having a first electrode and a second electrode provided to each of the matrix of pixel regions, one of the source and drain of the transistor being electrically connected to the first electrode of the capacitor; and a semiconductor layer constituting the channel region of the transistor formed on the substrate, the semiconductor layer constituting the channel region being electrically connected to the second electrode of the capacitor. - View Dependent Claims (23, 24, 25, 26, 27, 28, 29, 30, 31, 49, 60, 61, 62, 63, 64)
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Specification