High brightness light emitting diode
First Claim
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1. A light emitting diode comprising:
- a semiconductor substrate of a first conductivity type;
a lower cladding layer of AlGaInP of said first conductivity type formed on said substrate;
an active layer of undoped AlGaInP formed on said lower cladding layer; and
an upper cladding structure comprising;
a first layer of AlGaInP of a second conductivity type, which is lattice matched to said substrate, formed on said active layer;
a second layer of AlGaInP of said second conductivity type formed on said first layer, said second layer having sufficiently small thickness and low doping concentration for providing high resistivity;
and an ohmic contact layer of (Alx Ga1-x)y In1-y P of said second conductivity type with 0≦
x≦
0.1 and 0.7≦
y≦
1 formed on said second layer.
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Abstract
A semiconductor light emitting diode includes a first conductivity type compound semiconductor substrate, a first conductivity type lower cladding layer, an active layer of undoped AlGaInP or multiple quantum well structure, and a second conductivity type upper cladding structure. The upper cladding structure comprises an (Alx Ga1-x)y In1-y P four element compound semiconductor material. The improvement is that the upper cladding structure has a thin and very high resistivity layer inside.
10 Citations
12 Claims
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1. A light emitting diode comprising:
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a semiconductor substrate of a first conductivity type; a lower cladding layer of AlGaInP of said first conductivity type formed on said substrate; an active layer of undoped AlGaInP formed on said lower cladding layer; and
an upper cladding structure comprising;a first layer of AlGaInP of a second conductivity type, which is lattice matched to said substrate, formed on said active layer; a second layer of AlGaInP of said second conductivity type formed on said first layer, said second layer having sufficiently small thickness and low doping concentration for providing high resistivity; and an ohmic contact layer of (Alx Ga1-x)y In1-y P of said second conductivity type with 0≦
x≦
0.1 and 0.7≦
y≦
1 formed on said second layer. - View Dependent Claims (2, 3, 4, 5, 6)
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7. A light emitting diode comprising:
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a semiconductor substrate of a first conductivity type; a lower cladding layer of AlGaInP of said first conductivity type formed on said substrate; an active layer of undoped AlGaInP multiple quantum well formed on said lower cladding layer, said multiple quantum well structure comprising a plurality of (AlGa)InP quantum well layers and (AlGa)InP barrier layers alternatively stacking one after the other; an upper cladding structure comprising; a first layer of AlGaInP of a second conductivity type, which is lattice matched to said substrate, formed on said active layer; a second layer of AlGaInP of said second conductivity type formed on said first layer, said second layer having sufficiently small thickness and low doping concentration for providing high resistivity; and an ohmic contact layer of (Alx Ga1-x)y In1-y P of said second conductivity type with 0≦
x≦
0.1 and 0.7≦
y≦
1 formed on said second layer. - View Dependent Claims (8, 9, 10, 11, 12)
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Specification
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Current AssigneeEpistar Corporation
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Original AssigneeUnited Epitaxy Company (Epistar Corporation)
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InventorsTu, Chuan-Cheng, Chen, Tzer-Perng, Chang, Pan-Tzu
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Primary Examiner(s)Meier, Stephen D.
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Application NumberUS09/144,357Time in Patent Office631 DaysField of Search257/103, 257/101US Class Current257/103CPC Class CodesB82Y 20/00 Nanooptics, e.g. quantum op...H01L 33/06 within the light emitting r...H01L 33/14 with a carrier transport co...H01L 33/30 containing only elements of...
