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High voltage semiconductor structure

  • US 6,066,878 A
  • Filed: 07/02/1998
  • Issued: 05/23/2000
  • Est. Priority Date: 11/10/1997
  • Status: Expired due to Term
First Claim
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1. A MOSFET having a voltage supporting region comprising a horizontal layer, said layer comprising a first semiconductor type having a plurality of discontinuous floating regions of a second semiconductor type, wherein the regions are spaced in three dimensions.

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